Observation of Self-Reset During Forming of the TiN/HfOx/TiN Resistive Switching Device

Study on complementary resistive switching of TiN/HfO x /TiN memory device has shown that the device is highly susceptible to self-reset, i.e., the device is automatically programmed into the high-resistance state during forming. This is observed in the following opposite-polarity voltage sweep, in...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 2016-09, Vol.37 (9), p.1116-1119
Hauptverfasser:	Zhang, H. Z., Ang, D. S., Yew, K. S., Wang, X. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Cathodes Complementary resistive switching Hafnium compounds interfacial layer Ions memristor RRAM self-reset Switches Tin transition metal oxide
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!