Application of Solvent Modified PEDOT:PSS in All-Solution-Processed Inverted Quantum Dot Light-Emitting Diodes
The quantum dot light-emitting diode (QLED) is a promising candidate for the display and lighting applications. The fabrication of such devices by solution processing allows considerable cost reduction and is therefore very attractive for industrial manufacturers. In this paper, we report on the all...
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creator | Pan, Jiangyong Huang, Qianqian Zhang, Yuning Chen, Jing Tao, Zhi He, Chao Zhou, Kaifeng Lei, Wei |
description | The quantum dot light-emitting diode (QLED) is a promising candidate for the display and lighting applications. The fabrication of such devices by solution processing allows considerable cost reduction and is therefore very attractive for industrial manufacturers. In this paper, we report on the all solution-processed inverted QLEDs by incorporating with the solvent modified PEDOT:PSS. The effect of isopropanol (IPA) doping concentration in the PEDOT:PSS hole injection layer (HIL) on device performance was investigated, with the aim of facilitating the surface hydrophilicity and hole transport rate between HIL and hole transfer layer. It is demonstrated that the optimal amount of IPA doped in the HIL can significantly improve the performance of QLEDs in this study. |
doi_str_mv | 10.1109/JDT.2016.2589280 |
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fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_ieee_primary_7508379</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7508379</ieee_id><sourcerecordid>10_1109_JDT_2016_2589280</sourcerecordid><originalsourceid>FETCH-LOGICAL-c193t-64005eafb9908ec6339de388c9d9cecb9eee105ff9a4e4ec5b84749f15ee62fe3</originalsourceid><addsrcrecordid>eNo9kEFPwjAYhhujiYjeTbz0DxTbdR39vBGGisGAARNvy-i-Ys1YyVpI_PcOJZ7e9_C87-Eh5FbwgRAc7l_y1SDhIhskSkOi-RnpCaU0A5nI898umBTwcUmuQvjiXOpMZz3SjHa72pkyOt9Qb-nS1wdsIn31lbMOK7qY5PPVw2K5pK6ho7pmHbE_0mzReoMhdMy0OWAbu_K2L5u439LcRzpzm8_IJlsXo2s2NHe-wnBNLmxZB7w5ZZ-8P05W42c2mz9Nx6MZMwJkZFnKucLSrgG4RpNJCRVKrQ1UYNCsAREFV9ZCmWKKRq11OkzBCoWYJRZln_C_X9P6EFq0xa5127L9LgQvjr6Kzldx9FWcfHWTu7-J687_8aHiWg5B_gCaEGh6</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Application of Solvent Modified PEDOT:PSS in All-Solution-Processed Inverted Quantum Dot Light-Emitting Diodes</title><source>IEEE Electronic Library (IEL)</source><creator>Pan, Jiangyong ; Huang, Qianqian ; Zhang, Yuning ; Chen, Jing ; Tao, Zhi ; He, Chao ; Zhou, Kaifeng ; Lei, Wei</creator><creatorcontrib>Pan, Jiangyong ; Huang, Qianqian ; Zhang, Yuning ; Chen, Jing ; Tao, Zhi ; He, Chao ; Zhou, Kaifeng ; Lei, Wei</creatorcontrib><description>The quantum dot light-emitting diode (QLED) is a promising candidate for the display and lighting applications. The fabrication of such devices by solution processing allows considerable cost reduction and is therefore very attractive for industrial manufacturers. In this paper, we report on the all solution-processed inverted QLEDs by incorporating with the solvent modified PEDOT:PSS. The effect of isopropanol (IPA) doping concentration in the PEDOT:PSS hole injection layer (HIL) on device performance was investigated, with the aim of facilitating the surface hydrophilicity and hole transport rate between HIL and hole transfer layer. It is demonstrated that the optimal amount of IPA doped in the HIL can significantly improve the performance of QLEDs in this study.</description><identifier>ISSN: 1551-319X</identifier><identifier>EISSN: 1558-9323</identifier><identifier>DOI: 10.1109/JDT.2016.2589280</identifier><identifier>CODEN: IJDTAL</identifier><language>eng</language><publisher>IEEE</publisher><subject>All-solution-processed ; Annealing ; II-VI semiconductor materials ; Indium tin oxide ; quantum dot light-emitting diode ; Quantum dots ; solvent modified ; Solvents ; Zinc oxide</subject><ispartof>Journal of display technology, 2016-10, Vol.12 (10), p.1157-1161</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c193t-64005eafb9908ec6339de388c9d9cecb9eee105ff9a4e4ec5b84749f15ee62fe3</citedby><cites>FETCH-LOGICAL-c193t-64005eafb9908ec6339de388c9d9cecb9eee105ff9a4e4ec5b84749f15ee62fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7508379$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7508379$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Pan, Jiangyong</creatorcontrib><creatorcontrib>Huang, Qianqian</creatorcontrib><creatorcontrib>Zhang, Yuning</creatorcontrib><creatorcontrib>Chen, Jing</creatorcontrib><creatorcontrib>Tao, Zhi</creatorcontrib><creatorcontrib>He, Chao</creatorcontrib><creatorcontrib>Zhou, Kaifeng</creatorcontrib><creatorcontrib>Lei, Wei</creatorcontrib><title>Application of Solvent Modified PEDOT:PSS in All-Solution-Processed Inverted Quantum Dot Light-Emitting Diodes</title><title>Journal of display technology</title><addtitle>JDT</addtitle><description>The quantum dot light-emitting diode (QLED) is a promising candidate for the display and lighting applications. The fabrication of such devices by solution processing allows considerable cost reduction and is therefore very attractive for industrial manufacturers. In this paper, we report on the all solution-processed inverted QLEDs by incorporating with the solvent modified PEDOT:PSS. The effect of isopropanol (IPA) doping concentration in the PEDOT:PSS hole injection layer (HIL) on device performance was investigated, with the aim of facilitating the surface hydrophilicity and hole transport rate between HIL and hole transfer layer. It is demonstrated that the optimal amount of IPA doped in the HIL can significantly improve the performance of QLEDs in this study.</description><subject>All-solution-processed</subject><subject>Annealing</subject><subject>II-VI semiconductor materials</subject><subject>Indium tin oxide</subject><subject>quantum dot light-emitting diode</subject><subject>Quantum dots</subject><subject>solvent modified</subject><subject>Solvents</subject><subject>Zinc oxide</subject><issn>1551-319X</issn><issn>1558-9323</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFPwjAYhhujiYjeTbz0DxTbdR39vBGGisGAARNvy-i-Ys1YyVpI_PcOJZ7e9_C87-Eh5FbwgRAc7l_y1SDhIhskSkOi-RnpCaU0A5nI898umBTwcUmuQvjiXOpMZz3SjHa72pkyOt9Qb-nS1wdsIn31lbMOK7qY5PPVw2K5pK6ho7pmHbE_0mzReoMhdMy0OWAbu_K2L5u439LcRzpzm8_IJlsXo2s2NHe-wnBNLmxZB7w5ZZ-8P05W42c2mz9Nx6MZMwJkZFnKucLSrgG4RpNJCRVKrQ1UYNCsAREFV9ZCmWKKRq11OkzBCoWYJRZln_C_X9P6EFq0xa5127L9LgQvjr6Kzldx9FWcfHWTu7-J687_8aHiWg5B_gCaEGh6</recordid><startdate>201610</startdate><enddate>201610</enddate><creator>Pan, Jiangyong</creator><creator>Huang, Qianqian</creator><creator>Zhang, Yuning</creator><creator>Chen, Jing</creator><creator>Tao, Zhi</creator><creator>He, Chao</creator><creator>Zhou, Kaifeng</creator><creator>Lei, Wei</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201610</creationdate><title>Application of Solvent Modified PEDOT:PSS in All-Solution-Processed Inverted Quantum Dot Light-Emitting Diodes</title><author>Pan, Jiangyong ; Huang, Qianqian ; Zhang, Yuning ; Chen, Jing ; Tao, Zhi ; He, Chao ; Zhou, Kaifeng ; Lei, Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c193t-64005eafb9908ec6339de388c9d9cecb9eee105ff9a4e4ec5b84749f15ee62fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>All-solution-processed</topic><topic>Annealing</topic><topic>II-VI semiconductor materials</topic><topic>Indium tin oxide</topic><topic>quantum dot light-emitting diode</topic><topic>Quantum dots</topic><topic>solvent modified</topic><topic>Solvents</topic><topic>Zinc oxide</topic><toplevel>online_resources</toplevel><creatorcontrib>Pan, Jiangyong</creatorcontrib><creatorcontrib>Huang, Qianqian</creatorcontrib><creatorcontrib>Zhang, Yuning</creatorcontrib><creatorcontrib>Chen, Jing</creatorcontrib><creatorcontrib>Tao, Zhi</creatorcontrib><creatorcontrib>He, Chao</creatorcontrib><creatorcontrib>Zhou, Kaifeng</creatorcontrib><creatorcontrib>Lei, Wei</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>Journal of display technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pan, Jiangyong</au><au>Huang, Qianqian</au><au>Zhang, Yuning</au><au>Chen, Jing</au><au>Tao, Zhi</au><au>He, Chao</au><au>Zhou, Kaifeng</au><au>Lei, Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Application of Solvent Modified PEDOT:PSS in All-Solution-Processed Inverted Quantum Dot Light-Emitting Diodes</atitle><jtitle>Journal of display technology</jtitle><stitle>JDT</stitle><date>2016-10</date><risdate>2016</risdate><volume>12</volume><issue>10</issue><spage>1157</spage><epage>1161</epage><pages>1157-1161</pages><issn>1551-319X</issn><eissn>1558-9323</eissn><coden>IJDTAL</coden><abstract>The quantum dot light-emitting diode (QLED) is a promising candidate for the display and lighting applications. The fabrication of such devices by solution processing allows considerable cost reduction and is therefore very attractive for industrial manufacturers. In this paper, we report on the all solution-processed inverted QLEDs by incorporating with the solvent modified PEDOT:PSS. The effect of isopropanol (IPA) doping concentration in the PEDOT:PSS hole injection layer (HIL) on device performance was investigated, with the aim of facilitating the surface hydrophilicity and hole transport rate between HIL and hole transfer layer. It is demonstrated that the optimal amount of IPA doped in the HIL can significantly improve the performance of QLEDs in this study.</abstract><pub>IEEE</pub><doi>10.1109/JDT.2016.2589280</doi><tpages>5</tpages></addata></record> |
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subjects | All-solution-processed Annealing II-VI semiconductor materials Indium tin oxide quantum dot light-emitting diode Quantum dots solvent modified Solvents Zinc oxide |
title | Application of Solvent Modified PEDOT:PSS in All-Solution-Processed Inverted Quantum Dot Light-Emitting Diodes |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T00%3A59%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Application%20of%20Solvent%20Modified%20PEDOT:PSS%20in%20All-Solution-Processed%20Inverted%20Quantum%20Dot%20Light-Emitting%20Diodes&rft.jtitle=Journal%20of%20display%20technology&rft.au=Pan,%20Jiangyong&rft.date=2016-10&rft.volume=12&rft.issue=10&rft.spage=1157&rft.epage=1161&rft.pages=1157-1161&rft.issn=1551-319X&rft.eissn=1558-9323&rft.coden=IJDTAL&rft_id=info:doi/10.1109/JDT.2016.2589280&rft_dat=%3Ccrossref_RIE%3E10_1109_JDT_2016_2589280%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=7508379&rfr_iscdi=true |