A high-frequency fully differential BiCMOS operational amplifier

A high-frequency fully differential BiCMOS operational amplifier design for use in switched-capacitor circuits is presented. The operational amplifier is integrated in a 3.0-GHz, 2- mu m BiCMOS process with an active die area of 1.0 mm*1.2 mm. This BiCMOS op amp offers an infinite input resistance,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of solid-state circuits 1991-03, Vol.26 (3), p.203-208
Hauptverfasser: Karanicolas, A.N., O, K.K., Wang, J.Y.A., Lee, H.-S., Reif, R.L.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 208
container_issue 3
container_start_page 203
container_title IEEE journal of solid-state circuits
container_volume 26
creator Karanicolas, A.N.
O, K.K.
Wang, J.Y.A.
Lee, H.-S.
Reif, R.L.
description A high-frequency fully differential BiCMOS operational amplifier design for use in switched-capacitor circuits is presented. The operational amplifier is integrated in a 3.0-GHz, 2- mu m BiCMOS process with an active die area of 1.0 mm*1.2 mm. This BiCMOS op amp offers an infinite input resistance, a DC gain of 100 dB, a unity-gain frequency of 90 MHz with 45 degrees phase margin, and a slew rate of 150 V/ mu s. The differential output range is 12 V. The circuit is operated from a +or-5-V power supply and dissipates 125 mW. The op amp is unity-gain stable with 7 pF of capacitive loading at each output. The op amp is a two-stage, pole-split frequency compensated design that uses a PMOS input stage for infinite input resistance and an n-p-n bipolar second stage for high gain and high bandwidth. The frequency compensation network serves both the differential- and common-mode amplifiers so the differential- and common-mode amplifier dynamics are similar. A dynamic switched-capacitor common-mode feedback scheme is used to set the output common-mode level of the first and second stages.< >
doi_str_mv 10.1109/4.74997
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_74997</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>74997</ieee_id><sourcerecordid>28338138</sourcerecordid><originalsourceid>FETCH-LOGICAL-c272t-2f934abc5f414166203d31e691fadbeb7c01cf47dc3c38acb03b48975a710343</originalsourceid><addsrcrecordid>eNo90D1PwzAQBmALgUQpiJktE0wpvtip7Y1S8SUVdaADm-U4Z2rkJsFOh_57AkFMp7t7dDq9hFwCnQFQdctngisljsgEylLmINj7MZlQCjJXBaWn5Cylz6HlXMKE3C2yrf_Y5i7i1x4be8jcPoRDVnvnMGLTexOye798Xb9lbYfR9L5thpHZdcE7j_GcnDgTEl781SnZPD5sls_5av30slyscluIos8Lpxg3lS0dBw7zeUFZzQDnCpypK6yEpWAdF7VllkljK8oqLpUojQDKOJuS6_FsF9vh0dTrnU8WQzANtvukC8mYBCYHeDNCG9uUIjrdRb8z8aCB6p-ANNe_AQ3yapQeEf_VuPsG2OZfnA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28338138</pqid></control><display><type>article</type><title>A high-frequency fully differential BiCMOS operational amplifier</title><source>IEEE Electronic Library (IEL)</source><creator>Karanicolas, A.N. ; O, K.K. ; Wang, J.Y.A. ; Lee, H.-S. ; Reif, R.L.</creator><creatorcontrib>Karanicolas, A.N. ; O, K.K. ; Wang, J.Y.A. ; Lee, H.-S. ; Reif, R.L.</creatorcontrib><description>A high-frequency fully differential BiCMOS operational amplifier design for use in switched-capacitor circuits is presented. The operational amplifier is integrated in a 3.0-GHz, 2- mu m BiCMOS process with an active die area of 1.0 mm*1.2 mm. This BiCMOS op amp offers an infinite input resistance, a DC gain of 100 dB, a unity-gain frequency of 90 MHz with 45 degrees phase margin, and a slew rate of 150 V/ mu s. The differential output range is 12 V. The circuit is operated from a +or-5-V power supply and dissipates 125 mW. The op amp is unity-gain stable with 7 pF of capacitive loading at each output. The op amp is a two-stage, pole-split frequency compensated design that uses a PMOS input stage for infinite input resistance and an n-p-n bipolar second stage for high gain and high bandwidth. The frequency compensation network serves both the differential- and common-mode amplifiers so the differential- and common-mode amplifier dynamics are similar. A dynamic switched-capacitor common-mode feedback scheme is used to set the output common-mode level of the first and second stages.&lt; &gt;</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/4.74997</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analog circuits ; BiCMOS integrated circuits ; CMOS analog integrated circuits ; CMOS logic circuits ; CMOS process ; Differential amplifiers ; Frequency ; MOS devices ; Operational amplifiers ; Switching circuits</subject><ispartof>IEEE journal of solid-state circuits, 1991-03, Vol.26 (3), p.203-208</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c272t-2f934abc5f414166203d31e691fadbeb7c01cf47dc3c38acb03b48975a710343</citedby><cites>FETCH-LOGICAL-c272t-2f934abc5f414166203d31e691fadbeb7c01cf47dc3c38acb03b48975a710343</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/74997$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/74997$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Karanicolas, A.N.</creatorcontrib><creatorcontrib>O, K.K.</creatorcontrib><creatorcontrib>Wang, J.Y.A.</creatorcontrib><creatorcontrib>Lee, H.-S.</creatorcontrib><creatorcontrib>Reif, R.L.</creatorcontrib><title>A high-frequency fully differential BiCMOS operational amplifier</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A high-frequency fully differential BiCMOS operational amplifier design for use in switched-capacitor circuits is presented. The operational amplifier is integrated in a 3.0-GHz, 2- mu m BiCMOS process with an active die area of 1.0 mm*1.2 mm. This BiCMOS op amp offers an infinite input resistance, a DC gain of 100 dB, a unity-gain frequency of 90 MHz with 45 degrees phase margin, and a slew rate of 150 V/ mu s. The differential output range is 12 V. The circuit is operated from a +or-5-V power supply and dissipates 125 mW. The op amp is unity-gain stable with 7 pF of capacitive loading at each output. The op amp is a two-stage, pole-split frequency compensated design that uses a PMOS input stage for infinite input resistance and an n-p-n bipolar second stage for high gain and high bandwidth. The frequency compensation network serves both the differential- and common-mode amplifiers so the differential- and common-mode amplifier dynamics are similar. A dynamic switched-capacitor common-mode feedback scheme is used to set the output common-mode level of the first and second stages.&lt; &gt;</description><subject>Analog circuits</subject><subject>BiCMOS integrated circuits</subject><subject>CMOS analog integrated circuits</subject><subject>CMOS logic circuits</subject><subject>CMOS process</subject><subject>Differential amplifiers</subject><subject>Frequency</subject><subject>MOS devices</subject><subject>Operational amplifiers</subject><subject>Switching circuits</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo90D1PwzAQBmALgUQpiJktE0wpvtip7Y1S8SUVdaADm-U4Z2rkJsFOh_57AkFMp7t7dDq9hFwCnQFQdctngisljsgEylLmINj7MZlQCjJXBaWn5Cylz6HlXMKE3C2yrf_Y5i7i1x4be8jcPoRDVnvnMGLTexOye798Xb9lbYfR9L5thpHZdcE7j_GcnDgTEl781SnZPD5sls_5av30slyscluIos8Lpxg3lS0dBw7zeUFZzQDnCpypK6yEpWAdF7VllkljK8oqLpUojQDKOJuS6_FsF9vh0dTrnU8WQzANtvukC8mYBCYHeDNCG9uUIjrdRb8z8aCB6p-ANNe_AQ3yapQeEf_VuPsG2OZfnA</recordid><startdate>19910301</startdate><enddate>19910301</enddate><creator>Karanicolas, A.N.</creator><creator>O, K.K.</creator><creator>Wang, J.Y.A.</creator><creator>Lee, H.-S.</creator><creator>Reif, R.L.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19910301</creationdate><title>A high-frequency fully differential BiCMOS operational amplifier</title><author>Karanicolas, A.N. ; O, K.K. ; Wang, J.Y.A. ; Lee, H.-S. ; Reif, R.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c272t-2f934abc5f414166203d31e691fadbeb7c01cf47dc3c38acb03b48975a710343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Analog circuits</topic><topic>BiCMOS integrated circuits</topic><topic>CMOS analog integrated circuits</topic><topic>CMOS logic circuits</topic><topic>CMOS process</topic><topic>Differential amplifiers</topic><topic>Frequency</topic><topic>MOS devices</topic><topic>Operational amplifiers</topic><topic>Switching circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Karanicolas, A.N.</creatorcontrib><creatorcontrib>O, K.K.</creatorcontrib><creatorcontrib>Wang, J.Y.A.</creatorcontrib><creatorcontrib>Lee, H.-S.</creatorcontrib><creatorcontrib>Reif, R.L.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Karanicolas, A.N.</au><au>O, K.K.</au><au>Wang, J.Y.A.</au><au>Lee, H.-S.</au><au>Reif, R.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A high-frequency fully differential BiCMOS operational amplifier</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1991-03-01</date><risdate>1991</risdate><volume>26</volume><issue>3</issue><spage>203</spage><epage>208</epage><pages>203-208</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A high-frequency fully differential BiCMOS operational amplifier design for use in switched-capacitor circuits is presented. The operational amplifier is integrated in a 3.0-GHz, 2- mu m BiCMOS process with an active die area of 1.0 mm*1.2 mm. This BiCMOS op amp offers an infinite input resistance, a DC gain of 100 dB, a unity-gain frequency of 90 MHz with 45 degrees phase margin, and a slew rate of 150 V/ mu s. The differential output range is 12 V. The circuit is operated from a +or-5-V power supply and dissipates 125 mW. The op amp is unity-gain stable with 7 pF of capacitive loading at each output. The op amp is a two-stage, pole-split frequency compensated design that uses a PMOS input stage for infinite input resistance and an n-p-n bipolar second stage for high gain and high bandwidth. The frequency compensation network serves both the differential- and common-mode amplifiers so the differential- and common-mode amplifier dynamics are similar. A dynamic switched-capacitor common-mode feedback scheme is used to set the output common-mode level of the first and second stages.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/4.74997</doi><tpages>6</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0018-9200
ispartof IEEE journal of solid-state circuits, 1991-03, Vol.26 (3), p.203-208
issn 0018-9200
1558-173X
language eng
recordid cdi_ieee_primary_74997
source IEEE Electronic Library (IEL)
subjects Analog circuits
BiCMOS integrated circuits
CMOS analog integrated circuits
CMOS logic circuits
CMOS process
Differential amplifiers
Frequency
MOS devices
Operational amplifiers
Switching circuits
title A high-frequency fully differential BiCMOS operational amplifier
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T06%3A16%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20high-frequency%20fully%20differential%20BiCMOS%20operational%20amplifier&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Karanicolas,%20A.N.&rft.date=1991-03-01&rft.volume=26&rft.issue=3&rft.spage=203&rft.epage=208&rft.pages=203-208&rft.issn=0018-9200&rft.eissn=1558-173X&rft.coden=IJSCBC&rft_id=info:doi/10.1109/4.74997&rft_dat=%3Cproquest_RIE%3E28338138%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28338138&rft_id=info:pmid/&rft_ieee_id=74997&rfr_iscdi=true