The \gamma -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning
The memristor ratioed logic (MRL)-based NAND operation is demonstrated using a combination of two Ag/γ-Fe 2 O 3 nanoparticles assembly/Pt memristors in series with one CMOS inverter. This letter finds the MRL operational frequency to be restricted due to an inconsistency between SET and RESET and by...
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| Veröffentlicht in: | IEEE electron device letters 2016-08, Vol.37 (8), p.986-989 |
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| container_end_page | 989 |
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| container_issue | 8 |
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| container_title | IEEE electron device letters |
| container_volume | 37 |
| creator | Kyung Min Lee Jang, Jun Tae Yoon-Jae Baek Kang, Hara Sunwoong Choi Sung-Jin Choi Dong Myong Kim Chi Jung Kang Tae-Sik Yoon Hyun-Sun Mo Dae Hwan Kim |
| description | The memristor ratioed logic (MRL)-based NAND operation is demonstrated using a combination of two Ag/γ-Fe 2 O 3 nanoparticles assembly/Pt memristors in series with one CMOS inverter. This letter finds the MRL operational frequency to be restricted due to an inconsistency between SET and RESET and by an imbalance of the resistance between the two memristors. It is also shown that optical tuning resistance is a promising technique for use in improving the operational frequency of the MRL operation. MRL-based NAND logic demonstrated in this letter manifests itself as a potential candidate for memristor-based logic compatible with CMOS digital/analog circuitry. |
| doi_str_mv | 10.1109/LED.2016.2582523 |
| format | Article |
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This letter finds the MRL operational frequency to be restricted due to an inconsistency between SET and RESET and by an imbalance of the resistance between the two memristors. It is also shown that optical tuning resistance is a promising technique for use in improving the operational frequency of the MRL operation. 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This letter finds the MRL operational frequency to be restricted due to an inconsistency between SET and RESET and by an imbalance of the resistance between the two memristors. It is also shown that optical tuning resistance is a promising technique for use in improving the operational frequency of the MRL operation. MRL-based NAND logic demonstrated in this letter manifests itself as a potential candidate for memristor-based logic compatible with CMOS digital/analog circuitry.</description><subject>CMOS integrated circuits</subject><subject>Electrodes</subject><subject>Fe2O3</subject><subject>illumination</subject><subject>Logic gates</subject><subject>memristor</subject><subject>memristor ratioed logic</subject><subject>Memristors</subject><subject>nanoparticle</subject><subject>Nanoparticles</subject><subject>Resistance</subject><subject>Tuning</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotj0tLAzEURoMoWKt7wU3-QOq9eUwmy1pbLYwWpO4K5c4kUyPzKJNx0X9vQVcfHDgHPsbuEWaI4B6L5fNMAmYzaXJppLpgEzQmF2AydckmYDUKhZBds5uUvgFQa6snbLf9Cnx3oLYlLlZBbhR_p64_0jDGqgl8nlJoy-YknigFz99CO8Q09gP_oDH2Z1L0h1hx6jxfj4lvjmeNGr796WJ3uGVXNTUp3P3vlH2ultvFqyg2L-vFvBBRajMKVypLtbO1AlRUETq0WKHynjRkuUeNqrIWSutNiV6W52NoIScFmQuyVlP28NeNIYT9cYgtDae91U475dQvJ-ZQXw</recordid><startdate>201608</startdate><enddate>201608</enddate><creator>Kyung Min Lee</creator><creator>Jang, Jun Tae</creator><creator>Yoon-Jae Baek</creator><creator>Kang, Hara</creator><creator>Sunwoong Choi</creator><creator>Sung-Jin Choi</creator><creator>Dong Myong Kim</creator><creator>Chi Jung Kang</creator><creator>Tae-Sik Yoon</creator><creator>Hyun-Sun Mo</creator><creator>Dae Hwan Kim</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope></search><sort><creationdate>201608</creationdate><title>The \gamma -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning</title><author>Kyung Min Lee ; Jang, Jun Tae ; Yoon-Jae Baek ; Kang, Hara ; Sunwoong Choi ; Sung-Jin Choi ; Dong Myong Kim ; Chi Jung Kang ; Tae-Sik Yoon ; Hyun-Sun Mo ; Dae Hwan Kim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i245t-9b37af97f3013aca19171c13dda4068d1413c770b7d5b1d2b1551708a3069e2f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>CMOS integrated circuits</topic><topic>Electrodes</topic><topic>Fe2O3</topic><topic>illumination</topic><topic>Logic gates</topic><topic>memristor</topic><topic>memristor ratioed logic</topic><topic>Memristors</topic><topic>nanoparticle</topic><topic>Nanoparticles</topic><topic>Resistance</topic><topic>Tuning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kyung Min Lee</creatorcontrib><creatorcontrib>Jang, Jun Tae</creatorcontrib><creatorcontrib>Yoon-Jae Baek</creatorcontrib><creatorcontrib>Kang, Hara</creatorcontrib><creatorcontrib>Sunwoong Choi</creatorcontrib><creatorcontrib>Sung-Jin Choi</creatorcontrib><creatorcontrib>Dong Myong Kim</creatorcontrib><creatorcontrib>Chi Jung Kang</creatorcontrib><creatorcontrib>Tae-Sik Yoon</creatorcontrib><creatorcontrib>Hyun-Sun Mo</creatorcontrib><creatorcontrib>Dae Hwan Kim</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kyung Min Lee</au><au>Jang, Jun Tae</au><au>Yoon-Jae Baek</au><au>Kang, Hara</au><au>Sunwoong Choi</au><au>Sung-Jin Choi</au><au>Dong Myong Kim</au><au>Chi Jung Kang</au><au>Tae-Sik Yoon</au><au>Hyun-Sun Mo</au><au>Dae Hwan Kim</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The \gamma -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2016-08</date><risdate>2016</risdate><volume>37</volume><issue>8</issue><spage>986</spage><epage>989</epage><pages>986-989</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The memristor ratioed logic (MRL)-based NAND operation is demonstrated using a combination of two Ag/γ-Fe 2 O 3 nanoparticles assembly/Pt memristors in series with one CMOS inverter. This letter finds the MRL operational frequency to be restricted due to an inconsistency between SET and RESET and by an imbalance of the resistance between the two memristors. It is also shown that optical tuning resistance is a promising technique for use in improving the operational frequency of the MRL operation. MRL-based NAND logic demonstrated in this letter manifests itself as a potential candidate for memristor-based logic compatible with CMOS digital/analog circuitry.</abstract><pub>IEEE</pub><doi>10.1109/LED.2016.2582523</doi><tpages>4</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | CMOS integrated circuits Electrodes Fe2O3 illumination Logic gates memristor memristor ratioed logic Memristors nanoparticle Nanoparticles Resistance Tuning |
| title | The \gamma -Fe2O3 Nanoparticle Assembly-Based Memristor Ratioed Logic and Its Optical Tuning |
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