Control of Crack Formation for the Fabrication of Crack-Free and Self-Isolated High-Efficiency Gallium Arsenide Photovoltaic Cells on Silicon Substrate

We proposed a new scheme, controlling the crack formation by notch patterns, to fabricate self-isolated high-efficiency gallium arsenide (GaAs)-based solar cells on a silicon (Si) substrate. The notch patterns introduced into the Si substrate were found to successfully generate the crack-free areas...

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