Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles

This letter investigates the switching behavior of TaN/Al 2 O 3 :Ag:ZnO/ITO memristors fabricated on flexible substrates, for flexible nonvolatile memory and neuromorphic computing applications. The embedded Ag nanoparticles provide for improved device yield and reduced variability in resistance, fr...

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Veröffentlicht in:	IEEE electron device letters 2016-07, Vol.37 (7), p.878-881
Hauptverfasser:	Da-Ting Wang, Ya-Wei Dai, Jing Xu, Lin Chen, Qing-Qing Sun, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, Wei Zhang, David
Format:	Artikel
Sprache:	eng
Schlagworte:	flexible nonvolatile memory Fluctuations II-VI semiconductor materials Ions Nanoparticles neuromorphic system Nonvolatile memory RRAM Switches synapse Zinc oxide
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