A Modelling and Nonlinear Equalization Technique for a 20 Gb/s 0.77 pJ/b VCSEL Transmitter in 32 nm SOI CMOS
This paper describes an ultralow-power VCSEL transmitter in 32 nm SOI CMOS. To increase its power efficiency, the VCSEL is driven at a low bias current. Driving the VCSEL in this condition increases its inherent nonlinearity. Conventional pre-emphasis techniques cannot compensate for this effect bec...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2016-08, Vol.51 (8), p.1734-1743 |
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creator | Raj, Mayank Monge, Manuel Emami, Azita |
description | This paper describes an ultralow-power VCSEL transmitter in 32 nm SOI CMOS. To increase its power efficiency, the VCSEL is driven at a low bias current. Driving the VCSEL in this condition increases its inherent nonlinearity. Conventional pre-emphasis techniques cannot compensate for this effect because they have a linear response. To overcome this limitation, a nonlinear equalization scheme is proposed. A dynamic VCSEL modelling technique is used to generate the time-domain optical responses for "one" and "zero" bits. Based on the asymmetry of the two responses, the rising and falling edges are equalized separately. Additionally, instead of using fixed bit delays, the equalization delay is selected based on the bias current of the VCSEL. The efficiency of the proposed modelling and equalization technique is evaluated through simulations and measurements. The transmitter achieves energy efficiency of 0.77 pJ/b at 20 Gb/s and occupies 100 μm × 60 μm active silicon area. |
doi_str_mv | 10.1109/JSSC.2016.2553040 |
format | Article |
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To increase its power efficiency, the VCSEL is driven at a low bias current. Driving the VCSEL in this condition increases its inherent nonlinearity. Conventional pre-emphasis techniques cannot compensate for this effect because they have a linear response. To overcome this limitation, a nonlinear equalization scheme is proposed. A dynamic VCSEL modelling technique is used to generate the time-domain optical responses for "one" and "zero" bits. Based on the asymmetry of the two responses, the rising and falling edges are equalized separately. Additionally, instead of using fixed bit delays, the equalization delay is selected based on the bias current of the VCSEL. The efficiency of the proposed modelling and equalization technique is evaluated through simulations and measurements. The transmitter achieves energy efficiency of 0.77 pJ/b at 20 Gb/s and occupies 100 μm × 60 μm active silicon area.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2016.2553040</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidth ; Bias ; CMOS ; Delay ; Equalization ; Integrated circuit modeling ; Mathematical model ; Modelling ; nonlinear ; Nonlinear optics ; Nonlinearity ; optical ; Optical transmitters ; Resistance ; transmitter ; Transmitters ; Vertical cavity surface emission lasers ; Vertical cavity surface emitting lasers ; vertical-cavity surface-emitting laser (VCSEL)</subject><ispartof>IEEE journal of solid-state circuits, 2016-08, Vol.51 (8), p.1734-1743</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c256t-414d1f8655788722f2481b50606a25704ec356dfebfafef9b67cc0243160e85b3</citedby><cites>FETCH-LOGICAL-c256t-414d1f8655788722f2481b50606a25704ec356dfebfafef9b67cc0243160e85b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7465722$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7465722$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Raj, Mayank</creatorcontrib><creatorcontrib>Monge, Manuel</creatorcontrib><creatorcontrib>Emami, Azita</creatorcontrib><title>A Modelling and Nonlinear Equalization Technique for a 20 Gb/s 0.77 pJ/b VCSEL Transmitter in 32 nm SOI CMOS</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>This paper describes an ultralow-power VCSEL transmitter in 32 nm SOI CMOS. To increase its power efficiency, the VCSEL is driven at a low bias current. Driving the VCSEL in this condition increases its inherent nonlinearity. Conventional pre-emphasis techniques cannot compensate for this effect because they have a linear response. To overcome this limitation, a nonlinear equalization scheme is proposed. A dynamic VCSEL modelling technique is used to generate the time-domain optical responses for "one" and "zero" bits. Based on the asymmetry of the two responses, the rising and falling edges are equalized separately. Additionally, instead of using fixed bit delays, the equalization delay is selected based on the bias current of the VCSEL. The efficiency of the proposed modelling and equalization technique is evaluated through simulations and measurements. The transmitter achieves energy efficiency of 0.77 pJ/b at 20 Gb/s and occupies 100 μm × 60 μm active silicon area.</description><subject>Bandwidth</subject><subject>Bias</subject><subject>CMOS</subject><subject>Delay</subject><subject>Equalization</subject><subject>Integrated circuit modeling</subject><subject>Mathematical model</subject><subject>Modelling</subject><subject>nonlinear</subject><subject>Nonlinear optics</subject><subject>Nonlinearity</subject><subject>optical</subject><subject>Optical transmitters</subject><subject>Resistance</subject><subject>transmitter</subject><subject>Transmitters</subject><subject>Vertical cavity surface emission lasers</subject><subject>Vertical cavity surface emitting lasers</subject><subject>vertical-cavity surface-emitting laser (VCSEL)</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkc9uGjEQxq2qkUppHiDqxVIvvSyM_645RitKiKAclkS5rbyL3ToCG-zl0DwNz8KT1Yioh55mRvp9o2_mQ-iOwIgQmIwf67oaUSByRIVgwOEDGhAhVEFK9vIRDQCIKiYU4BP6nNJrHjlXZIDCPV6Gjdlunf-Ftd_gn8Hn3uiIp4ej3ro33bvg8dp0v707HA22IWKNKZxPs3acMIzK8nzaP45b_FzV0wVeR-3TzvW9idh5zOj55He4Xs1xtVzVX9CN1dtkbt_rED39mK6rh2Kxms2r-0XRUSH7ghO-IVZJIUqlSkotzW5bARKkpqIEbjom5Maa1mpr7KSVZdcB5YxIMEq0bIi-X_fuY8iuU9_sXOryndqbcEwNUVkPwPKzhujbf-hrOEaf3WUKFFGCcJYpcqW6GFKKxjb76HY6_mkINJcImksEzSWC5j2CrPl61ThjzD--5FLkk9hfUAJ_8g</recordid><startdate>201608</startdate><enddate>201608</enddate><creator>Raj, Mayank</creator><creator>Monge, Manuel</creator><creator>Emami, Azita</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>201608</creationdate><title>A Modelling and Nonlinear Equalization Technique for a 20 Gb/s 0.77 pJ/b VCSEL Transmitter in 32 nm SOI CMOS</title><author>Raj, Mayank ; Monge, Manuel ; Emami, Azita</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c256t-414d1f8655788722f2481b50606a25704ec356dfebfafef9b67cc0243160e85b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Bandwidth</topic><topic>Bias</topic><topic>CMOS</topic><topic>Delay</topic><topic>Equalization</topic><topic>Integrated circuit modeling</topic><topic>Mathematical model</topic><topic>Modelling</topic><topic>nonlinear</topic><topic>Nonlinear optics</topic><topic>Nonlinearity</topic><topic>optical</topic><topic>Optical transmitters</topic><topic>Resistance</topic><topic>transmitter</topic><topic>Transmitters</topic><topic>Vertical cavity surface emission lasers</topic><topic>Vertical cavity surface emitting lasers</topic><topic>vertical-cavity surface-emitting laser (VCSEL)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Raj, Mayank</creatorcontrib><creatorcontrib>Monge, Manuel</creatorcontrib><creatorcontrib>Emami, Azita</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Raj, Mayank</au><au>Monge, Manuel</au><au>Emami, Azita</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Modelling and Nonlinear Equalization Technique for a 20 Gb/s 0.77 pJ/b VCSEL Transmitter in 32 nm SOI CMOS</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2016-08</date><risdate>2016</risdate><volume>51</volume><issue>8</issue><spage>1734</spage><epage>1743</epage><pages>1734-1743</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>This paper describes an ultralow-power VCSEL transmitter in 32 nm SOI CMOS. To increase its power efficiency, the VCSEL is driven at a low bias current. Driving the VCSEL in this condition increases its inherent nonlinearity. Conventional pre-emphasis techniques cannot compensate for this effect because they have a linear response. To overcome this limitation, a nonlinear equalization scheme is proposed. A dynamic VCSEL modelling technique is used to generate the time-domain optical responses for "one" and "zero" bits. Based on the asymmetry of the two responses, the rising and falling edges are equalized separately. Additionally, instead of using fixed bit delays, the equalization delay is selected based on the bias current of the VCSEL. The efficiency of the proposed modelling and equalization technique is evaluated through simulations and measurements. The transmitter achieves energy efficiency of 0.77 pJ/b at 20 Gb/s and occupies 100 μm × 60 μm active silicon area.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSSC.2016.2553040</doi><tpages>10</tpages></addata></record> |
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subjects | Bandwidth Bias CMOS Delay Equalization Integrated circuit modeling Mathematical model Modelling nonlinear Nonlinear optics Nonlinearity optical Optical transmitters Resistance transmitter Transmitters Vertical cavity surface emission lasers Vertical cavity surface emitting lasers vertical-cavity surface-emitting laser (VCSEL) |
title | A Modelling and Nonlinear Equalization Technique for a 20 Gb/s 0.77 pJ/b VCSEL Transmitter in 32 nm SOI CMOS |
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