Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-Film Transistors Due to Mobile Sodium

The negative bias stress normally yields a negative threshold voltage shift of the thin film transistors due to the additional positive charges trapped in the gate dielectrics or at channel/gate insulator interface. However, a positive threshold voltage shift of the device with the post InGaZnO depo...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2016-09, Vol.4 (5), p.353-357
Hauptverfasser:	Lo, Chieh, Feng, Zheng-Lun, Huang, Wei-Lun, Liu, Chee Wee, Chen, Tsang-Long, Chou, Cheng-Hsu
Format:	Artikel
Sprache:	eng
Schlagworte:	abnormal VT shift Annealing Electrodes Handheld computers InGaZnO Insulators Logic gates mobile charge negative bias stress NIST thin film transistor Thin film transistors
Online-Zugang:	Volltext
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