Bipolar Resistive Switching Behavior in Sol-Gel MgTiNiOx Memory Device

High-resistance state (HRS) current has significant effect on the reliability and power consumption of resistive switching memories. Low HRS current is helpful for obtaining ultra-low power and for high ON/OFF ratio nonvolatile memory application. The reduced HRS current of a sol-gel magnesium titan...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2016-09, Vol.4 (5), p.321-327
Hauptverfasser:	Yu-Chi Chang, Ke-Jing Lee, Cheng-Jung Lee, Li-Wen Wang, Yeong-Her Wang
Format:	Artikel
Sprache:	eng
Schlagworte:	Filament Magnesium magnesium titanate magnesium titanate nickelate memory Nickel Nonvolatile memory sol–gel Surface morphology Surface topography Switches Titanium compounds
Online-Zugang:	Volltext
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