Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

Variability and difficulty in achieving good ohmic contacts are major bottlenecks toward the realization of high-performance molybdenum disulphide (MoS 2 )-based devices. The role of surface state engineering through a simple sulfur-based technique is explored to enable reliable and superior contact...

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Veröffentlicht in:	IEEE transactions on electron devices 2016-06, Vol.63 (6), p.2556-2562
Hauptverfasser:	Bhattacharjee, Shubhadeep, Ganapathi, Kolla Lakshmi, Nath, Digbijoy N., Bhat, Navakanta
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact resistance Doping Field effect transistors Metal/molybdenum disulphide (MoS₂) contacts Nickel Schottky barrier height (SBH) Sulfur sulfur treatment surface state engineering Surface treatment variability
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