Design and Modeling of GeSn-Based Heterojunction Phototransistors for Communication Applications

We propose the use of Ge 1-x Sn x heterojunction phototransistors (HPTs) as efficient optical receivers on Si substrates and analyze their performance. Our designs use n-Ge/p-Ge 1-x Sn x /n-Ge 1-x Sn x layers pseudomorphically grown on Si wafers via a Ge virtual substrate, which offers compatibility...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2016-11, Vol.22 (6), p.425-433
Hauptverfasser:	Guo-En Chang, Basu, Rikmantra, Mukhopadhyay, Bratati, Basu, Prasanta K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption GeSn alloys heterojunction phototransistors infrared Metals Optical buffering Optical receivers Photonic band gap responsivity Silicon silicon photonics Substrates
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