Optimization of p-Bonding Electrodes on ZnO:Ga in GaN-Based Light-Emitting Diodes

We propose the optimal p-bonding electrode (p-BE) schemes on single-crystalline Ga-doped ZnO (ZnO:Ga) in GaN-based light-emitting diodes (LEDs) by means of Cr (3 nm)/Al 0.9 Cu 0.1 (50 nm) reflection-assisted layer (RAL) and Pd 0.8 Al 0.2 /Ni/Au layers. Design factors for the p-BE were described from...

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Veröffentlicht in:	IEEE transactions on electron devices 2016-05, Vol.63 (5), p.1957-1962
Hauptverfasser:	Choi, Jun-Hyuk, Kim, Sei-Min, Jang, Ja-Soon
Format:	Artikel
Sprache:	eng
Schlagworte:	Bond strength Electrodes Epitaxial layers Gallium nitride II-VI semiconductor materials Indium tin oxide Light emitting diodes light-emitting diodes (LEDs) p-electrode Photonics reliability characteristics single-crystalline ZnO Zinc oxide
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