Multilevel-Cell Phase-Change Memory: A Viable Technology

In order for any non-volatile memory (NVM) to be considered a viable technology, its reliability should be verified at the array level. In particular, properties such as high endurance and at least moderate data retention are considered essential. Phase-change memory (PCM) is one such NVM technology...

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Veröffentlicht in:	IEEE journal on emerging and selected topics in circuits and systems 2016-03, Vol.6 (1), p.87-100
Hauptverfasser:	Athmanathan, Aravinthan, Stanisavljevic, Milos, Papandreou, Nikolaos, Pozidis, Haralampos, Eleftheriou, Evangelos
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Circuits Collection Conductivity Durability Endurance Feasibility Flash memory (computers) Memory nonvolatile memory Phase change materials Phase change memory Programming Reliability Resistance semiconductor device reliability Storage capacity
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