High-Performance Ultraviolet 385-nm GaN-Based LEDs With Embedded Nanoscale Air Voids Produced Through Atomic Layer Deposition and Al2O3 Passivation

This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al 2 O 3 die...

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Veröffentlicht in:	IEEE electron device letters 2016-04, Vol.37 (4), p.452-455
Hauptverfasser:	Che-Yu, Liu, Chia-Yen, Huang, Pei-Yu, Wu, Huang, Jhih-Kai, Tsung Sheng Kao, An-Je Zhou, Da-Wei, Lin, YewChung Sermon Wu, Chun-Yen, Chang, Hao-Chung, Kuo
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Gallium nitride Light emitting diodes Nanoscale devices nanotechnology optoelectronic devices Passivation Power generation Strain
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