0.2-μm p/sup +/-n junction characteristics dependent on implantation and annealing processes

0.2-μm p/sup +/-n junction characteristics dependent on implantation and annealing processes

Junction depth, sheet resistance, dopant activation, and diode leakage current characteristics were measured to find out the optimal processing conditions for the formation of 0.2-μm p/sup +/-n junctions. Among the 2×10/sup 15/ cm/sup -2/ BF 2 implanted crystalline, As or Ge preamorphized silicon, t...

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Veröffentlicht in:IEEE electron device letters 1999-02, Vol.20 (2), p.83-85
1. Verfasser: Shin-Nam Hong
Format: Artikel
Sprache:eng
Schlagworte:
Boron
Crystallization
Diodes
Electrical resistance measurement
Furnaces
Rapid thermal annealing
Rapid thermal processing
Silicon
Temperature
Thickness measurement
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Zusammenfassung:Junction depth, sheet resistance, dopant activation, and diode leakage current characteristics were measured to find out the optimal processing conditions for the formation of 0.2-μm p/sup +/-n junctions. Among the 2×10/sup 15/ cm/sup -2/ BF 2 implanted crystalline, As or Ge preamorphized silicon, the crystalline and Ge preamorphized samples exhibit excellent characteristics. The thermal cycle of furnace anneal (FA) followed by rapid thermal anneal (RTA) shows better characteristics than furnace anneal, rapid thermal anneal, or rapid thermal anneal prior to furnace anneal.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.740659