SiGe HBT Technology: Future Trends and TCAD-Based Roadmap

A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results of various 1-D, 2-D, and 3-D technology computer-aided design (TCAD) simulation tools with geometry scalable compact modeli...

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Veröffentlicht in:	Proceedings of the IEEE 2017-06, Vol.105 (6), p.1068-1086
Hauptverfasser:	Schroter, Michael, Rosenbaum, Tommy, Chevalier, Pascal, Heinemann, Bernd, Voinigescu, Sorin P., Preisler, Ed, Bock, Josef, Mukherjee, Anindya
Format:	Artikel
Sprache:	eng
Schlagworte:	BiCMOS BiCMOS integrated circuits CAD CAD CAM Circuit design CMOS integrated circuits Computer aided design Computer simulation Design Electronics Foundries Heterojunction bipolar transistors Integrated circuit modeling Performance evaluation Predictions predictive device modeling Radio frequency Scaling factors Semiconductor devices Silicon germanides Silicon germanium silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) technology computer-aided design (TCAD) technology roadmap Terahertz materials
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