Investigation into socketed CDM (SDM) tester parasitics
The ESD Association standards working group 5.3.2 is analyzing the procedure and stress that is applied to a device under test (DUT) using a socketed discharge model (SDM) test system, formerly referred to as socketed CDM. Our final goal is to define an SDM tester specification that will guarantee t...
Gespeichert in:
Hauptverfasser: | , , , , , , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 310 |
---|---|
container_issue | |
container_start_page | 301 |
container_title | |
container_volume | |
creator | Chaine, M. Verhaege, K. Avery, L. Kelly, M. Gieser, H. Bock, K. Henry, L.G. Meuse, T. Brodbeck, T. Barth, J. |
description | The ESD Association standards working group 5.3.2 is analyzing the procedure and stress that is applied to a device under test (DUT) using a socketed discharge model (SDM) test system, formerly referred to as socketed CDM. Our final goal is to define an SDM tester specification that will guarantee test result reproducibility across different test equipment. This paper investigates the effect of tester background parasitics on the discharge current waveforms of an SDM tester. Characteristic waveforms were studied and SDM testing was performed on actual devices. It is shown that SDM tester parasitics determine the stress applied to the DUT. This directly affects the SDM failure threshold voltage levels and may lead to miscorrelation and nonreproducibility of test results across different SDM test systems. This paper empirically determines the relative contributions of the various tester parasitics to the total stress applied to the DUT. Our investigations indicate that the tester provides 10 to 20 pF parasitic capacitance discharge into each pin of the device. Tester background parasitic elements play such an important role in the SDM discharge event that correlation between test systems built by different manufacturers is unlikely without completely duplicating a particular tester. |
doi_str_mv | 10.1109/EOSESD.1998.737050 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_737050</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>737050</ieee_id><sourcerecordid>737050</sourcerecordid><originalsourceid>FETCH-LOGICAL-i104t-1bc53f4e68bf7108c0b8c78ff6560b3467448b2b3e8a93c400b8d693cf15814d3</originalsourceid><addsrcrecordid>eNotj01LxDAYhAMiKGv_wJ5y1MPWvE3SvDlKW3Vhlz1Uz0uSJhI_2qUJgv_ewu5cZuAZBoaQNbASgOnH7tB3fVuC1lgqrphkV6TQCgEVcsY1VDekSOmTLZISK6FuidqOvz7l-GFynEYaxzzRNLkvn_1Am3ZP7_t2_0Dz0vEzPZnZpJijS3fkOpjv5IuLr8j7c_fWvG52h5dt87TbRGAib8A6yYPwNdqggKFjFp3CEGpZM8tFrYRAW1nu0WjuBFv4UC8pgEQQA1-R9Xk3eu-Ppzn-mPnveH7H_wFHJkQV</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Investigation into socketed CDM (SDM) tester parasitics</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Chaine, M. ; Verhaege, K. ; Avery, L. ; Kelly, M. ; Gieser, H. ; Bock, K. ; Henry, L.G. ; Meuse, T. ; Brodbeck, T. ; Barth, J.</creator><creatorcontrib>Chaine, M. ; Verhaege, K. ; Avery, L. ; Kelly, M. ; Gieser, H. ; Bock, K. ; Henry, L.G. ; Meuse, T. ; Brodbeck, T. ; Barth, J.</creatorcontrib><description>The ESD Association standards working group 5.3.2 is analyzing the procedure and stress that is applied to a device under test (DUT) using a socketed discharge model (SDM) test system, formerly referred to as socketed CDM. Our final goal is to define an SDM tester specification that will guarantee test result reproducibility across different test equipment. This paper investigates the effect of tester background parasitics on the discharge current waveforms of an SDM tester. Characteristic waveforms were studied and SDM testing was performed on actual devices. It is shown that SDM tester parasitics determine the stress applied to the DUT. This directly affects the SDM failure threshold voltage levels and may lead to miscorrelation and nonreproducibility of test results across different SDM test systems. This paper empirically determines the relative contributions of the various tester parasitics to the total stress applied to the DUT. Our investigations indicate that the tester provides 10 to 20 pF parasitic capacitance discharge into each pin of the device. Tester background parasitic elements play such an important role in the SDM discharge event that correlation between test systems built by different manufacturers is unlikely without completely duplicating a particular tester.</description><identifier>ISBN: 9781878303912</identifier><identifier>ISBN: 1878303910</identifier><identifier>DOI: 10.1109/EOSESD.1998.737050</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrostatic discharge ; Manufacturing ; Parasitic capacitance ; Performance evaluation ; Reproducibility of results ; Standards Working Groups ; Stress ; System testing ; Test equipment ; Threshold voltage</subject><ispartof>Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347), 1998, p.301-310</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/737050$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,4051,4052,27929,54924</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/737050$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chaine, M.</creatorcontrib><creatorcontrib>Verhaege, K.</creatorcontrib><creatorcontrib>Avery, L.</creatorcontrib><creatorcontrib>Kelly, M.</creatorcontrib><creatorcontrib>Gieser, H.</creatorcontrib><creatorcontrib>Bock, K.</creatorcontrib><creatorcontrib>Henry, L.G.</creatorcontrib><creatorcontrib>Meuse, T.</creatorcontrib><creatorcontrib>Brodbeck, T.</creatorcontrib><creatorcontrib>Barth, J.</creatorcontrib><title>Investigation into socketed CDM (SDM) tester parasitics</title><title>Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347)</title><addtitle>EOSESD</addtitle><description>The ESD Association standards working group 5.3.2 is analyzing the procedure and stress that is applied to a device under test (DUT) using a socketed discharge model (SDM) test system, formerly referred to as socketed CDM. Our final goal is to define an SDM tester specification that will guarantee test result reproducibility across different test equipment. This paper investigates the effect of tester background parasitics on the discharge current waveforms of an SDM tester. Characteristic waveforms were studied and SDM testing was performed on actual devices. It is shown that SDM tester parasitics determine the stress applied to the DUT. This directly affects the SDM failure threshold voltage levels and may lead to miscorrelation and nonreproducibility of test results across different SDM test systems. This paper empirically determines the relative contributions of the various tester parasitics to the total stress applied to the DUT. Our investigations indicate that the tester provides 10 to 20 pF parasitic capacitance discharge into each pin of the device. Tester background parasitic elements play such an important role in the SDM discharge event that correlation between test systems built by different manufacturers is unlikely without completely duplicating a particular tester.</description><subject>Electrostatic discharge</subject><subject>Manufacturing</subject><subject>Parasitic capacitance</subject><subject>Performance evaluation</subject><subject>Reproducibility of results</subject><subject>Standards Working Groups</subject><subject>Stress</subject><subject>System testing</subject><subject>Test equipment</subject><subject>Threshold voltage</subject><isbn>9781878303912</isbn><isbn>1878303910</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj01LxDAYhAMiKGv_wJ5y1MPWvE3SvDlKW3Vhlz1Uz0uSJhI_2qUJgv_ewu5cZuAZBoaQNbASgOnH7tB3fVuC1lgqrphkV6TQCgEVcsY1VDekSOmTLZISK6FuidqOvz7l-GFynEYaxzzRNLkvn_1Am3ZP7_t2_0Dz0vEzPZnZpJijS3fkOpjv5IuLr8j7c_fWvG52h5dt87TbRGAib8A6yYPwNdqggKFjFp3CEGpZM8tFrYRAW1nu0WjuBFv4UC8pgEQQA1-R9Xk3eu-Ppzn-mPnveH7H_wFHJkQV</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Chaine, M.</creator><creator>Verhaege, K.</creator><creator>Avery, L.</creator><creator>Kelly, M.</creator><creator>Gieser, H.</creator><creator>Bock, K.</creator><creator>Henry, L.G.</creator><creator>Meuse, T.</creator><creator>Brodbeck, T.</creator><creator>Barth, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1998</creationdate><title>Investigation into socketed CDM (SDM) tester parasitics</title><author>Chaine, M. ; Verhaege, K. ; Avery, L. ; Kelly, M. ; Gieser, H. ; Bock, K. ; Henry, L.G. ; Meuse, T. ; Brodbeck, T. ; Barth, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-1bc53f4e68bf7108c0b8c78ff6560b3467448b2b3e8a93c400b8d693cf15814d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Electrostatic discharge</topic><topic>Manufacturing</topic><topic>Parasitic capacitance</topic><topic>Performance evaluation</topic><topic>Reproducibility of results</topic><topic>Standards Working Groups</topic><topic>Stress</topic><topic>System testing</topic><topic>Test equipment</topic><topic>Threshold voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Chaine, M.</creatorcontrib><creatorcontrib>Verhaege, K.</creatorcontrib><creatorcontrib>Avery, L.</creatorcontrib><creatorcontrib>Kelly, M.</creatorcontrib><creatorcontrib>Gieser, H.</creatorcontrib><creatorcontrib>Bock, K.</creatorcontrib><creatorcontrib>Henry, L.G.</creatorcontrib><creatorcontrib>Meuse, T.</creatorcontrib><creatorcontrib>Brodbeck, T.</creatorcontrib><creatorcontrib>Barth, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chaine, M.</au><au>Verhaege, K.</au><au>Avery, L.</au><au>Kelly, M.</au><au>Gieser, H.</au><au>Bock, K.</au><au>Henry, L.G.</au><au>Meuse, T.</au><au>Brodbeck, T.</au><au>Barth, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Investigation into socketed CDM (SDM) tester parasitics</atitle><btitle>Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347)</btitle><stitle>EOSESD</stitle><date>1998</date><risdate>1998</risdate><spage>301</spage><epage>310</epage><pages>301-310</pages><isbn>9781878303912</isbn><isbn>1878303910</isbn><abstract>The ESD Association standards working group 5.3.2 is analyzing the procedure and stress that is applied to a device under test (DUT) using a socketed discharge model (SDM) test system, formerly referred to as socketed CDM. Our final goal is to define an SDM tester specification that will guarantee test result reproducibility across different test equipment. This paper investigates the effect of tester background parasitics on the discharge current waveforms of an SDM tester. Characteristic waveforms were studied and SDM testing was performed on actual devices. It is shown that SDM tester parasitics determine the stress applied to the DUT. This directly affects the SDM failure threshold voltage levels and may lead to miscorrelation and nonreproducibility of test results across different SDM test systems. This paper empirically determines the relative contributions of the various tester parasitics to the total stress applied to the DUT. Our investigations indicate that the tester provides 10 to 20 pF parasitic capacitance discharge into each pin of the device. Tester background parasitic elements play such an important role in the SDM discharge event that correlation between test systems built by different manufacturers is unlikely without completely duplicating a particular tester.</abstract><pub>IEEE</pub><doi>10.1109/EOSESD.1998.737050</doi><tpages>10</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISBN: 9781878303912 |
ispartof | Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347), 1998, p.301-310 |
issn | |
language | eng |
recordid | cdi_ieee_primary_737050 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Electrostatic discharge Manufacturing Parasitic capacitance Performance evaluation Reproducibility of results Standards Working Groups Stress System testing Test equipment Threshold voltage |
title | Investigation into socketed CDM (SDM) tester parasitics |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T05%3A27%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Investigation%20into%20socketed%20CDM%20(SDM)%20tester%20parasitics&rft.btitle=Electrical%20Overstress/%20Electrostatic%20Discharge%20Symposium%20Proceedings.%201998%20(Cat.%20No.98TH8347)&rft.au=Chaine,%20M.&rft.date=1998&rft.spage=301&rft.epage=310&rft.pages=301-310&rft.isbn=9781878303912&rft.isbn_list=1878303910&rft_id=info:doi/10.1109/EOSESD.1998.737050&rft_dat=%3Cieee_6IE%3E737050%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=737050&rfr_iscdi=true |