Modeling low-dose-rate effects in irradiated bipolar-base oxides
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose ra...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on nuclear science 1998-12, Vol.45 (6), p.2352-2360 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2360 |
|---|---|
| container_issue | 6 |
| container_start_page | 2352 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 45 |
| creator | Graves, R.J. Cirba, C.R. Schrimpf, R.D. Milanowski, R.J. Michez, A. Fleetwood, D.M. Witczak, S.C. Saigne, F. |
| description | A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose rates, more holes are trapped near the silicon-oxide interface than at high dose rates, resulting in larger midgap voltage shifts. The additional trapped charge near the interface causes an exponential increase in excess base current and a resultant decrease in current gain for some NPN bipolar technologies. Space charge effects also may be responsible for differences in interface trap formation at low and high dose rates. |
| doi_str_mv | 10.1109/23.736454 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_736454</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>736454</ieee_id><sourcerecordid>28364021</sourcerecordid><originalsourceid>FETCH-LOGICAL-c346t-cd603d62336994d91a2ad3b1d23769f8aa711903d1df9fd38fa1b41cba5031f83</originalsourceid><addsrcrecordid>eNpFkD1PwzAQhi0EEqUwsDJlQmJw8cVxEm9UCChSEQvM1iU-g1FaF7vl49-TKlWZTvfeo1e6h7FzEBMAoa9zOalkWajigI1AqZqDqupDNhICaq4LrY_ZSUof_VoooUbs5ilY6vzyLevCN7chEY-4poyco3adMr_MfIxofR_arPGr0GHkDSbKwo-3lE7ZkcMu0dlujtnr_d3L7YzPnx8eb6dz3sqiXPPWlkLaMpey1LqwGjBHKxuwuaxK7WrECkD3CFinnZW1Q2gKaBtUQoKr5ZhdDb3v2JlV9AuMvyagN7Pp3Gyz_kEBSldf0LOXA7uK4XNDaW0WPrXUdbiksEkmr3tFIof_0jaGlCK5fTMIs_VpcmkGnz17MbCeiPbc7vgHoetuVg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28364021</pqid></control><display><type>article</type><title>Modeling low-dose-rate effects in irradiated bipolar-base oxides</title><source>IEEE Electronic Library (IEL)</source><creator>Graves, R.J. ; Cirba, C.R. ; Schrimpf, R.D. ; Milanowski, R.J. ; Michez, A. ; Fleetwood, D.M. ; Witczak, S.C. ; Saigne, F.</creator><creatorcontrib>Graves, R.J. ; Cirba, C.R. ; Schrimpf, R.D. ; Milanowski, R.J. ; Michez, A. ; Fleetwood, D.M. ; Witczak, S.C. ; Saigne, F.</creatorcontrib><description>A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose rates, more holes are trapped near the silicon-oxide interface than at high dose rates, resulting in larger midgap voltage shifts. The additional trapped charge near the interface causes an exponential increase in excess base current and a resultant decrease in current gain for some NPN bipolar technologies. Space charge effects also may be responsible for differences in interface trap formation at low and high dose rates.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.736454</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bipolar integrated circuits ; Crystallization ; Degradation ; Electronics ; Engineering Sciences ; Integrated circuit technology ; Laboratories ; Modems ; MOSFETs ; Positron emission tomography ; Space technology ; USA Councils</subject><ispartof>IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2352-2360</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c346t-cd603d62336994d91a2ad3b1d23769f8aa711903d1df9fd38fa1b41cba5031f83</citedby><cites>FETCH-LOGICAL-c346t-cd603d62336994d91a2ad3b1d23769f8aa711903d1df9fd38fa1b41cba5031f83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/736454$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/736454$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://hal.science/hal-01801597$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Graves, R.J.</creatorcontrib><creatorcontrib>Cirba, C.R.</creatorcontrib><creatorcontrib>Schrimpf, R.D.</creatorcontrib><creatorcontrib>Milanowski, R.J.</creatorcontrib><creatorcontrib>Michez, A.</creatorcontrib><creatorcontrib>Fleetwood, D.M.</creatorcontrib><creatorcontrib>Witczak, S.C.</creatorcontrib><creatorcontrib>Saigne, F.</creatorcontrib><title>Modeling low-dose-rate effects in irradiated bipolar-base oxides</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose rates, more holes are trapped near the silicon-oxide interface than at high dose rates, resulting in larger midgap voltage shifts. The additional trapped charge near the interface causes an exponential increase in excess base current and a resultant decrease in current gain for some NPN bipolar technologies. Space charge effects also may be responsible for differences in interface trap formation at low and high dose rates.</description><subject>Bipolar integrated circuits</subject><subject>Crystallization</subject><subject>Degradation</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Integrated circuit technology</subject><subject>Laboratories</subject><subject>Modems</subject><subject>MOSFETs</subject><subject>Positron emission tomography</subject><subject>Space technology</subject><subject>USA Councils</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpFkD1PwzAQhi0EEqUwsDJlQmJw8cVxEm9UCChSEQvM1iU-g1FaF7vl49-TKlWZTvfeo1e6h7FzEBMAoa9zOalkWajigI1AqZqDqupDNhICaq4LrY_ZSUof_VoooUbs5ilY6vzyLevCN7chEY-4poyco3adMr_MfIxofR_arPGr0GHkDSbKwo-3lE7ZkcMu0dlujtnr_d3L7YzPnx8eb6dz3sqiXPPWlkLaMpey1LqwGjBHKxuwuaxK7WrECkD3CFinnZW1Q2gKaBtUQoKr5ZhdDb3v2JlV9AuMvyagN7Pp3Gyz_kEBSldf0LOXA7uK4XNDaW0WPrXUdbiksEkmr3tFIof_0jaGlCK5fTMIs_VpcmkGnz17MbCeiPbc7vgHoetuVg</recordid><startdate>19981201</startdate><enddate>19981201</enddate><creator>Graves, R.J.</creator><creator>Cirba, C.R.</creator><creator>Schrimpf, R.D.</creator><creator>Milanowski, R.J.</creator><creator>Michez, A.</creator><creator>Fleetwood, D.M.</creator><creator>Witczak, S.C.</creator><creator>Saigne, F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>1XC</scope></search><sort><creationdate>19981201</creationdate><title>Modeling low-dose-rate effects in irradiated bipolar-base oxides</title><author>Graves, R.J. ; Cirba, C.R. ; Schrimpf, R.D. ; Milanowski, R.J. ; Michez, A. ; Fleetwood, D.M. ; Witczak, S.C. ; Saigne, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-cd603d62336994d91a2ad3b1d23769f8aa711903d1df9fd38fa1b41cba5031f83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Bipolar integrated circuits</topic><topic>Crystallization</topic><topic>Degradation</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Integrated circuit technology</topic><topic>Laboratories</topic><topic>Modems</topic><topic>MOSFETs</topic><topic>Positron emission tomography</topic><topic>Space technology</topic><topic>USA Councils</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Graves, R.J.</creatorcontrib><creatorcontrib>Cirba, C.R.</creatorcontrib><creatorcontrib>Schrimpf, R.D.</creatorcontrib><creatorcontrib>Milanowski, R.J.</creatorcontrib><creatorcontrib>Michez, A.</creatorcontrib><creatorcontrib>Fleetwood, D.M.</creatorcontrib><creatorcontrib>Witczak, S.C.</creatorcontrib><creatorcontrib>Saigne, F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Graves, R.J.</au><au>Cirba, C.R.</au><au>Schrimpf, R.D.</au><au>Milanowski, R.J.</au><au>Michez, A.</au><au>Fleetwood, D.M.</au><au>Witczak, S.C.</au><au>Saigne, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling low-dose-rate effects in irradiated bipolar-base oxides</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1998-12-01</date><risdate>1998</risdate><volume>45</volume><issue>6</issue><spage>2352</spage><epage>2360</epage><pages>2352-2360</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose rates, more holes are trapped near the silicon-oxide interface than at high dose rates, resulting in larger midgap voltage shifts. The additional trapped charge near the interface causes an exponential increase in excess base current and a resultant decrease in current gain for some NPN bipolar technologies. Space charge effects also may be responsible for differences in interface trap formation at low and high dose rates.</abstract><pub>IEEE</pub><doi>10.1109/23.736454</doi><tpages>9</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2352-2360 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_ieee_primary_736454 |
| source | IEEE Electronic Library (IEL) |
| subjects | Bipolar integrated circuits Crystallization Degradation Electronics Engineering Sciences Integrated circuit technology Laboratories Modems MOSFETs Positron emission tomography Space technology USA Councils |
| title | Modeling low-dose-rate effects in irradiated bipolar-base oxides |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T05%3A43%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Modeling%20low-dose-rate%20effects%20in%20irradiated%20bipolar-base%20oxides&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Graves,%20R.J.&rft.date=1998-12-01&rft.volume=45&rft.issue=6&rft.spage=2352&rft.epage=2360&rft.pages=2352-2360&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/23.736454&rft_dat=%3Cproquest_RIE%3E28364021%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28364021&rft_id=info:pmid/&rft_ieee_id=736454&rfr_iscdi=true |