Low Insertion Loss, Compact 4-bit Phase Shifter in 65 nm CMOS for 5G Applications

This letter presents a 28 GHz low insertion loss and compact size 4-bit phase shifter in 65 nm CMOS Technology. In order to get low insertion loss and compact size, this phase shifter is composed of two types of passive phase shifters, high-pass/low-pass type and switched filter type. Various techni...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE microwave and wireless components letters 2016-01, Vol.26 (1), p.37-39
Hauptverfasser: Shin, Gyeong-Seop, Kim, Jae-Sun, Oh, Hyun-Myung, Choi, Sunkyu, Byeon, Chul Woo, Son, Ju Ho, Lee, Jeong Ho, Kim, Choul-Young
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 39
container_issue 1
container_start_page 37
container_title IEEE microwave and wireless components letters
container_volume 26
creator Shin, Gyeong-Seop
Kim, Jae-Sun
Oh, Hyun-Myung
Choi, Sunkyu
Byeon, Chul Woo
Son, Ju Ho
Lee, Jeong Ho
Kim, Choul-Young
description This letter presents a 28 GHz low insertion loss and compact size 4-bit phase shifter in 65 nm CMOS Technology. In order to get low insertion loss and compact size, this phase shifter is composed of two types of passive phase shifters, high-pass/low-pass type and switched filter type. Various techniques are used such as triple well body-floating, gate-floating, removal of capacitance of the off-state transistor using resonant inductor, and minimized interconnection line which is based on matching network. This phase shifter has 6.36 dB of average insertion loss over the 27.5-28.35 GHz, and loss variation is about 2 dB. The return loss is higher than 12 dB, RMS phase error is 8.98 ^{\circ} , OIP3 is 8.1 dBm at - 10 dBm input power and its core size is 636 \mu m \times 360 \mu m. To the authors' knowledge, these results are the state of the art in CMOS passive phase shifters in K-band frequency.
doi_str_mv 10.1109/LMWC.2015.2505624
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_7358176</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7358176</ieee_id><sourcerecordid>1786200439</sourcerecordid><originalsourceid>FETCH-LOGICAL-c532t-54055577d90fdde2467a4299bbb56ee91b2105d281e12858dcc2f934bd23244e3</originalsourceid><addsrcrecordid>eNpdkEtLw0AUhQdRsFZ_gLgZcOPC1LnzSDLLErQWUqpUcTnkMaFT0kycSRH_vRMqLlzds_jO4fIhdA1kBkDkQ776yGaUgJhRQURM-QmagBBpBEnMT8fMIAJG5Dm68H5HCPCUwwS95vYLLzuv3WBsh3Pr_T3O7L4vqgHzqDQDftkWXuPN1jSDdth0OBa42-Nstd7gxjosFnje962pinHCX6Kzpmi9vvq9U_T-9PiWPUf5erHM5nlUCUaHSHAihEiSWpKmrjXlcVJwKmVZliLWWkJJgYiapqCBpiKtq4o2kvGypoxyrtkU3R13e2c_D9oPam98pdu26LQ9eAVJGlNCOJMBvf2H7uzBdeG7QAVJnCaBmyI4UpULFpxuVO_MvnDfCogaJatRsholq1_JoXNz7Bit9R-fMJEG7-wHTDp0NQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1755842704</pqid></control><display><type>article</type><title>Low Insertion Loss, Compact 4-bit Phase Shifter in 65 nm CMOS for 5G Applications</title><source>IEEE Electronic Library (IEL)</source><creator>Shin, Gyeong-Seop ; Kim, Jae-Sun ; Oh, Hyun-Myung ; Choi, Sunkyu ; Byeon, Chul Woo ; Son, Ju Ho ; Lee, Jeong Ho ; Kim, Choul-Young</creator><creatorcontrib>Shin, Gyeong-Seop ; Kim, Jae-Sun ; Oh, Hyun-Myung ; Choi, Sunkyu ; Byeon, Chul Woo ; Son, Ju Ho ; Lee, Jeong Ho ; Kim, Choul-Young</creatorcontrib><description>This letter presents a 28 GHz low insertion loss and compact size 4-bit phase shifter in 65 nm CMOS Technology. In order to get low insertion loss and compact size, this phase shifter is composed of two types of passive phase shifters, high-pass/low-pass type and switched filter type. Various techniques are used such as triple well body-floating, gate-floating, removal of capacitance of the off-state transistor using resonant inductor, and minimized interconnection line which is based on matching network. This phase shifter has 6.36 dB of average insertion loss over the 27.5-28.35 GHz, and loss variation is about 2 dB. The return loss is higher than 12 dB, RMS phase error is 8.98 ^{\circ} , OIP3 is 8.1 dBm at - 10 dBm input power and its core size is 636 \mu m \times 360 \mu m. To the authors' knowledge, these results are the state of the art in CMOS passive phase shifters in K-band frequency.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2015.2505624</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>5G mobile communication ; CMOS ; CMOS integrated circuits ; CMOS switch ; Core loss ; Inductors ; Insertion loss ; Interconnection ; Loss measurement ; Microwaves ; Noise levels ; passive phase shifter ; Phase error ; Phase shifters ; Spectrum allocation ; Switches</subject><ispartof>IEEE microwave and wireless components letters, 2016-01, Vol.26 (1), p.37-39</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c532t-54055577d90fdde2467a4299bbb56ee91b2105d281e12858dcc2f934bd23244e3</citedby><cites>FETCH-LOGICAL-c532t-54055577d90fdde2467a4299bbb56ee91b2105d281e12858dcc2f934bd23244e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7358176$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7358176$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Shin, Gyeong-Seop</creatorcontrib><creatorcontrib>Kim, Jae-Sun</creatorcontrib><creatorcontrib>Oh, Hyun-Myung</creatorcontrib><creatorcontrib>Choi, Sunkyu</creatorcontrib><creatorcontrib>Byeon, Chul Woo</creatorcontrib><creatorcontrib>Son, Ju Ho</creatorcontrib><creatorcontrib>Lee, Jeong Ho</creatorcontrib><creatorcontrib>Kim, Choul-Young</creatorcontrib><title>Low Insertion Loss, Compact 4-bit Phase Shifter in 65 nm CMOS for 5G Applications</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>This letter presents a 28 GHz low insertion loss and compact size 4-bit phase shifter in 65 nm CMOS Technology. In order to get low insertion loss and compact size, this phase shifter is composed of two types of passive phase shifters, high-pass/low-pass type and switched filter type. Various techniques are used such as triple well body-floating, gate-floating, removal of capacitance of the off-state transistor using resonant inductor, and minimized interconnection line which is based on matching network. This phase shifter has 6.36 dB of average insertion loss over the 27.5-28.35 GHz, and loss variation is about 2 dB. The return loss is higher than 12 dB, RMS phase error is 8.98 ^{\circ} , OIP3 is 8.1 dBm at - 10 dBm input power and its core size is 636 \mu m \times 360 \mu m. To the authors' knowledge, these results are the state of the art in CMOS passive phase shifters in K-band frequency.</description><subject>5G mobile communication</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>CMOS switch</subject><subject>Core loss</subject><subject>Inductors</subject><subject>Insertion loss</subject><subject>Interconnection</subject><subject>Loss measurement</subject><subject>Microwaves</subject><subject>Noise levels</subject><subject>passive phase shifter</subject><subject>Phase error</subject><subject>Phase shifters</subject><subject>Spectrum allocation</subject><subject>Switches</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtLw0AUhQdRsFZ_gLgZcOPC1LnzSDLLErQWUqpUcTnkMaFT0kycSRH_vRMqLlzds_jO4fIhdA1kBkDkQ776yGaUgJhRQURM-QmagBBpBEnMT8fMIAJG5Dm68H5HCPCUwwS95vYLLzuv3WBsh3Pr_T3O7L4vqgHzqDQDftkWXuPN1jSDdth0OBa42-Nstd7gxjosFnje962pinHCX6Kzpmi9vvq9U_T-9PiWPUf5erHM5nlUCUaHSHAihEiSWpKmrjXlcVJwKmVZliLWWkJJgYiapqCBpiKtq4o2kvGypoxyrtkU3R13e2c_D9oPam98pdu26LQ9eAVJGlNCOJMBvf2H7uzBdeG7QAVJnCaBmyI4UpULFpxuVO_MvnDfCogaJatRsholq1_JoXNz7Bit9R-fMJEG7-wHTDp0NQ</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Shin, Gyeong-Seop</creator><creator>Kim, Jae-Sun</creator><creator>Oh, Hyun-Myung</creator><creator>Choi, Sunkyu</creator><creator>Byeon, Chul Woo</creator><creator>Son, Ju Ho</creator><creator>Lee, Jeong Ho</creator><creator>Kim, Choul-Young</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20160101</creationdate><title>Low Insertion Loss, Compact 4-bit Phase Shifter in 65 nm CMOS for 5G Applications</title><author>Shin, Gyeong-Seop ; Kim, Jae-Sun ; Oh, Hyun-Myung ; Choi, Sunkyu ; Byeon, Chul Woo ; Son, Ju Ho ; Lee, Jeong Ho ; Kim, Choul-Young</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c532t-54055577d90fdde2467a4299bbb56ee91b2105d281e12858dcc2f934bd23244e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>5G mobile communication</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>CMOS switch</topic><topic>Core loss</topic><topic>Inductors</topic><topic>Insertion loss</topic><topic>Interconnection</topic><topic>Loss measurement</topic><topic>Microwaves</topic><topic>Noise levels</topic><topic>passive phase shifter</topic><topic>Phase error</topic><topic>Phase shifters</topic><topic>Spectrum allocation</topic><topic>Switches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shin, Gyeong-Seop</creatorcontrib><creatorcontrib>Kim, Jae-Sun</creatorcontrib><creatorcontrib>Oh, Hyun-Myung</creatorcontrib><creatorcontrib>Choi, Sunkyu</creatorcontrib><creatorcontrib>Byeon, Chul Woo</creatorcontrib><creatorcontrib>Son, Ju Ho</creatorcontrib><creatorcontrib>Lee, Jeong Ho</creatorcontrib><creatorcontrib>Kim, Choul-Young</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shin, Gyeong-Seop</au><au>Kim, Jae-Sun</au><au>Oh, Hyun-Myung</au><au>Choi, Sunkyu</au><au>Byeon, Chul Woo</au><au>Son, Ju Ho</au><au>Lee, Jeong Ho</au><au>Kim, Choul-Young</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low Insertion Loss, Compact 4-bit Phase Shifter in 65 nm CMOS for 5G Applications</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2016-01-01</date><risdate>2016</risdate><volume>26</volume><issue>1</issue><spage>37</spage><epage>39</epage><pages>37-39</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>This letter presents a 28 GHz low insertion loss and compact size 4-bit phase shifter in 65 nm CMOS Technology. In order to get low insertion loss and compact size, this phase shifter is composed of two types of passive phase shifters, high-pass/low-pass type and switched filter type. Various techniques are used such as triple well body-floating, gate-floating, removal of capacitance of the off-state transistor using resonant inductor, and minimized interconnection line which is based on matching network. This phase shifter has 6.36 dB of average insertion loss over the 27.5-28.35 GHz, and loss variation is about 2 dB. The return loss is higher than 12 dB, RMS phase error is 8.98 ^{\circ} , OIP3 is 8.1 dBm at - 10 dBm input power and its core size is 636 \mu m \times 360 \mu m. To the authors' knowledge, these results are the state of the art in CMOS passive phase shifters in K-band frequency.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2015.2505624</doi><tpages>3</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1531-1309
ispartof IEEE microwave and wireless components letters, 2016-01, Vol.26 (1), p.37-39
issn 1531-1309
2771-957X
1558-1764
2771-9588
language eng
recordid cdi_ieee_primary_7358176
source IEEE Electronic Library (IEL)
subjects 5G mobile communication
CMOS
CMOS integrated circuits
CMOS switch
Core loss
Inductors
Insertion loss
Interconnection
Loss measurement
Microwaves
Noise levels
passive phase shifter
Phase error
Phase shifters
Spectrum allocation
Switches
title Low Insertion Loss, Compact 4-bit Phase Shifter in 65 nm CMOS for 5G Applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T06%3A56%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20Insertion%20Loss,%20Compact%204-bit%20Phase%20Shifter%20in%2065%20nm%20CMOS%20for%205G%20Applications&rft.jtitle=IEEE%20microwave%20and%20wireless%20components%20letters&rft.au=Shin,%20Gyeong-Seop&rft.date=2016-01-01&rft.volume=26&rft.issue=1&rft.spage=37&rft.epage=39&rft.pages=37-39&rft.issn=1531-1309&rft.eissn=1558-1764&rft.coden=IMWCBJ&rft_id=info:doi/10.1109/LMWC.2015.2505624&rft_dat=%3Cproquest_RIE%3E1786200439%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1755842704&rft_id=info:pmid/&rft_ieee_id=7358176&rfr_iscdi=true