Impact of Quantum Capacitance on Intrinsic Inversion Capacitance Characteristics and Inversion-Charge Loss for Multigate III-V-on-Insulator nMOSFETs

This paper investigates the impact of quantum capacitance on the intrinsic inversion-capacitance (C inv ) characteristics of high-mobility multigate III-V-on-insulator nMOSFETs through a numerical simulation corroborated by the theoretical calculation. Nonmonotonic C inv characteristics stemming fro...

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Veröffentlicht in:	IEEE transactions on electron devices 2016-01, Vol.63 (1), p.339-344
Hauptverfasser:	Shen, Hsin-Hung, Shen, Shih-Lun, Yu, Chang-Hung, Su, Pin
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Capacitance-voltage characteristics Computer simulation Devices Effective mass Gain III-V MOSFET Indium arsenides Logic gates Mathematical analysis MOSFET multigate MOSFET Quantum capacitance Silicon Stemming
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