Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications

Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications

The effects of proton-induced displacement damage in GaN HEMTs on circuit-level RF power amplifier parameters such as circuit gain, stability, and RF output power are presented. The results are explained based on the device-level degradation. Commercial-off-the-shelf GaN HEMTs from two manufacturers...

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Veröffentlicht in:IEEE transactions on nuclear science 2015-12, Vol.62 (6), p.2417-2422
Hauptverfasser: Ives, Nathan E., Jin Chen, Witulski, Arthur F., Schrimpf, Ronald D., Fleetwood, Daniel M., Bruce, Ralph W., McCurdy, Michael W., En Xia Zhang, Massengill, Lloyd W.
Format: Artikel
Sprache:eng
Schlagworte:
Gallium nitride
HEMT
HEMTs
Power semiconductor devices
proton
Protons
Radiation effects
Radio frequency
S-parameters
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Zusammenfassung:The effects of proton-induced displacement damage in GaN HEMTs on circuit-level RF power amplifier parameters such as circuit gain, stability, and RF output power are presented. The results are explained based on the device-level degradation. Commercial-off-the-shelf GaN HEMTs from two manufacturers were compared. Differences are observed in both device and circuit level responses. Suggestions to mitigate the negative effects of displacement damage on GaN based amplifiers are also provided.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2015.2499160