Silicon carbide power devices

The more and more demanding requirements of the power device users bring the silicon technology very close to its own physical limits. Silicon carbide (SiC) appears today as the only semiconductor having the capability for significantly improving the ratings of major power components (such as high v...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chante, J.P., Locatelli, M.L., Planson, D., Ottaviani, L., Morvan, E., Isoird, K., Nallet, F.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Commercialization Delay Electric power Engineering Sciences Fabrication Frequency Prototypes Rectifiers Silicon carbide Substrates Temperature Voltage
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