Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions
The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse bias safe operating area (RBSOA) test system...
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| creator | Chih-Chieh Shen Kefner, A.R. Berning, D.W. Bernstein, J.B. |
| description | The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse bias safe operating area (RBSOA) test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single and multiple filament formation is presented and supported with both measurements and simulations. |
| doi_str_mv | 10.1109/IAS.1998.730242 |
| format | Conference Proceeding |
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The UIS measurements are made using a unique, automated nondestructive reverse bias safe operating area (RBSOA) test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single and multiple filament formation is presented and supported with both measurements and simulations.</description><identifier>ISSN: 0197-2618</identifier><identifier>ISBN: 9780780349438</identifier><identifier>ISBN: 0780349431</identifier><identifier>EISSN: 2576-702X</identifier><identifier>DOI: 10.1109/IAS.1998.730242</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anodes ; Area measurement ; Automatic testing ; Circuit simulation ; Circuit testing ; Insulated gate bipolar transistors ; Nondestructive testing ; Predictive models ; Shape ; System testing</subject><ispartof>Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. 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No.98CH36242)</title><addtitle>IAS</addtitle><description>The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse bias safe operating area (RBSOA) test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single and multiple filament formation is presented and supported with both measurements and simulations.</description><subject>Anodes</subject><subject>Area measurement</subject><subject>Automatic testing</subject><subject>Circuit simulation</subject><subject>Circuit testing</subject><subject>Insulated gate bipolar transistors</subject><subject>Nondestructive testing</subject><subject>Predictive models</subject><subject>Shape</subject><subject>System testing</subject><issn>0197-2618</issn><issn>2576-702X</issn><isbn>9780780349438</isbn><isbn>0780349431</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkEtLAzEURoMPcKxdC67yB6bem8xMkmUttg4UXFjRXclTIzOZMg-h_16lwgdncziLj5BbhAUiqPt6-bJApeRCcGAFOyMZK0WVC2Dv52SuhITf8UIVXF6QDFCJnFUor8j1MHwBAJcVZuRtrWMz9Z66Y9JttAPtAh0_Pa03Dzvqpj6mDzpOfcq7EGjoejol2-j24B2NyU12jN-eNp12f6Ltkotj7NJwQy6DbgY__-eMvK4fd6unfPu8qVfLbR5RsDFn6Bjj3KvSY-UNlsJwZ6w1Co0REg0EBlB5KLlmWgXUigmpLKBQLljLZ-Tu1I3e-_2hj63uj_vTJfwHXv9TSw</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Chih-Chieh Shen</creator><creator>Kefner, A.R.</creator><creator>Berning, D.W.</creator><creator>Bernstein, J.B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1998</creationdate><title>Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions</title><author>Chih-Chieh Shen ; Kefner, A.R. ; Berning, D.W. ; Bernstein, J.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-21d2233e95e16eb157b3dbccb91bb781b0f2006e053a2a9f1a92789c0179dfcc3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Anodes</topic><topic>Area measurement</topic><topic>Automatic testing</topic><topic>Circuit simulation</topic><topic>Circuit testing</topic><topic>Insulated gate bipolar transistors</topic><topic>Nondestructive testing</topic><topic>Predictive models</topic><topic>Shape</topic><topic>System testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Chih-Chieh Shen</creatorcontrib><creatorcontrib>Kefner, A.R.</creatorcontrib><creatorcontrib>Berning, D.W.</creatorcontrib><creatorcontrib>Bernstein, J.B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chih-Chieh Shen</au><au>Kefner, A.R.</au><au>Berning, D.W.</au><au>Bernstein, J.B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions</atitle><btitle>Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242)</btitle><stitle>IAS</stitle><date>1998</date><risdate>1998</risdate><volume>2</volume><spage>831</spage><epage>839 vol.2</epage><pages>831-839 vol.2</pages><issn>0197-2618</issn><eissn>2576-702X</eissn><isbn>9780780349438</isbn><isbn>0780349431</isbn><abstract>The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse bias safe operating area (RBSOA) test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single and multiple filament formation is presented and supported with both measurements and simulations.</abstract><pub>IEEE</pub><doi>10.1109/IAS.1998.730242</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0197-2618 |
| ispartof | Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242), 1998, Vol.2, p.831-839 vol.2 |
| issn | 0197-2618 2576-702X |
| language | eng |
| recordid | cdi_ieee_primary_730242 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Anodes Area measurement Automatic testing Circuit simulation Circuit testing Insulated gate bipolar transistors Nondestructive testing Predictive models Shape System testing |
| title | Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions |
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