Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives
As CMOS technology begins to face significant scaling challenges, considerable research efforts are being directed to investigate alternative device technologies that can serve as a replacement for CMOS. Spintronic devices, which utilize the spin of electrons as the state variable for computation, h...
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| Veröffentlicht in: | IEEE transactions on computer-aided design of integrated circuits and systems 2016-01, Vol.35 (1), p.1-22 |
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| container_title | IEEE transactions on computer-aided design of integrated circuits and systems |
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| creator | Xuanyao Fong Yusung Kim Yogendra, Karthik Deliang Fan Sengupta, Abhronil Raghunathan, Anand Roy, Kaushik |
| description | As CMOS technology begins to face significant scaling challenges, considerable research efforts are being directed to investigate alternative device technologies that can serve as a replacement for CMOS. Spintronic devices, which utilize the spin of electrons as the state variable for computation, have recently emerged as one of the leading candidates for post-CMOS technology. Recent experiments have shown that a nano-magnet can be switched by a spin-polarized current and this has led to a number of novel device proposals over the past few years. In this paper, we provide a review of different mechanisms that manipulate the state of a nano-magnet using current-induced spin-transfer torque and demonstrate how such mechanisms have been engineered to develop device structures for energy-efficient on-chip memory and logic. |
| doi_str_mv | 10.1109/TCAD.2015.2481793 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_7295574</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7295574</ieee_id><sourcerecordid>1793232946</sourcerecordid><originalsourceid>FETCH-LOGICAL-c369t-5aea3b960038d0e316624afac247a55ddb27901050d4aa75c84d47a2e35898903</originalsourceid><addsrcrecordid>eNpdkEtLw0AQgBdRsFZ_gHgJePGSOvvKZr2V1he0WLCel-1mIiltNu62hf57k7Z48DTMzDfDzEfILYUBpaAf56PheMCAygETOVWan5Ee1Vylgkp6TnrAVJ4CKLgkVzEuAaiQTPfI9LOp6nQebB1LDMnch58tJmPcVQ5jUvqQTPx35RJbF8kU1z7sn5JZ8LFBt4mH6gzDIat2GK_JRWlXEW9OsU--Xp7no7d08vH6PhpOUsczvUmlRcsXOgPgeQHIaZYxYUvrmFBWyqJYMKWBgoRCWKuky0XRdhhymetcA--Th-PeJvj23rgx6yo6XK1sjX4bTSeAcaZF1qL3_9Cl34a6va6lJOXAKXQL6ZFy7W8xYGmaUK1t2BsKphNsOsGmE2xOgtuZu-NMhYh_vGJaSiX4L-FBdPg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1751303100</pqid></control><display><type>article</type><title>Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives</title><source>IEEE Electronic Library (IEL)</source><creator>Xuanyao Fong ; Yusung Kim ; Yogendra, Karthik ; Deliang Fan ; Sengupta, Abhronil ; Raghunathan, Anand ; Roy, Kaushik</creator><creatorcontrib>Xuanyao Fong ; Yusung Kim ; Yogendra, Karthik ; Deliang Fan ; Sengupta, Abhronil ; Raghunathan, Anand ; Roy, Kaushik</creatorcontrib><description>As CMOS technology begins to face significant scaling challenges, considerable research efforts are being directed to investigate alternative device technologies that can serve as a replacement for CMOS. Spintronic devices, which utilize the spin of electrons as the state variable for computation, have recently emerged as one of the leading candidates for post-CMOS technology. Recent experiments have shown that a nano-magnet can be switched by a spin-polarized current and this has led to a number of novel device proposals over the past few years. In this paper, we provide a review of different mechanisms that manipulate the state of a nano-magnet using current-induced spin-transfer torque and demonstrate how such mechanisms have been engineered to develop device structures for energy-efficient on-chip memory and logic.</description><identifier>ISSN: 0278-0070</identifier><identifier>EISSN: 1937-4151</identifier><identifier>DOI: 10.1109/TCAD.2015.2481793</identifier><identifier>CODEN: ITCSDI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Boolean logic ; CMOS ; Computer aided design ; Design engineering ; Devices ; Frequency modulation ; Logic ; magnetic tunnel junction (MTJ) ; Magnetic tunneling ; Magnetization ; Nanostructure ; neuromorphic computing ; non-Boolean logic ; nonvolatile memory ; Perpendicular magnetic anisotropy ; post-CMOS ; Saturation magnetization ; Spin valves ; spin-transfer torque (STT) ; spintronics ; State variable ; Torque</subject><ispartof>IEEE transactions on computer-aided design of integrated circuits and systems, 2016-01, Vol.35 (1), p.1-22</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c369t-5aea3b960038d0e316624afac247a55ddb27901050d4aa75c84d47a2e35898903</citedby><cites>FETCH-LOGICAL-c369t-5aea3b960038d0e316624afac247a55ddb27901050d4aa75c84d47a2e35898903</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7295574$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7295574$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xuanyao Fong</creatorcontrib><creatorcontrib>Yusung Kim</creatorcontrib><creatorcontrib>Yogendra, Karthik</creatorcontrib><creatorcontrib>Deliang Fan</creatorcontrib><creatorcontrib>Sengupta, Abhronil</creatorcontrib><creatorcontrib>Raghunathan, Anand</creatorcontrib><creatorcontrib>Roy, Kaushik</creatorcontrib><title>Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives</title><title>IEEE transactions on computer-aided design of integrated circuits and systems</title><addtitle>TCAD</addtitle><description>As CMOS technology begins to face significant scaling challenges, considerable research efforts are being directed to investigate alternative device technologies that can serve as a replacement for CMOS. Spintronic devices, which utilize the spin of electrons as the state variable for computation, have recently emerged as one of the leading candidates for post-CMOS technology. Recent experiments have shown that a nano-magnet can be switched by a spin-polarized current and this has led to a number of novel device proposals over the past few years. In this paper, we provide a review of different mechanisms that manipulate the state of a nano-magnet using current-induced spin-transfer torque and demonstrate how such mechanisms have been engineered to develop device structures for energy-efficient on-chip memory and logic.</description><subject>Boolean logic</subject><subject>CMOS</subject><subject>Computer aided design</subject><subject>Design engineering</subject><subject>Devices</subject><subject>Frequency modulation</subject><subject>Logic</subject><subject>magnetic tunnel junction (MTJ)</subject><subject>Magnetic tunneling</subject><subject>Magnetization</subject><subject>Nanostructure</subject><subject>neuromorphic computing</subject><subject>non-Boolean logic</subject><subject>nonvolatile memory</subject><subject>Perpendicular magnetic anisotropy</subject><subject>post-CMOS</subject><subject>Saturation magnetization</subject><subject>Spin valves</subject><subject>spin-transfer torque (STT)</subject><subject>spintronics</subject><subject>State variable</subject><subject>Torque</subject><issn>0278-0070</issn><issn>1937-4151</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtLw0AQgBdRsFZ_gHgJePGSOvvKZr2V1he0WLCel-1mIiltNu62hf57k7Z48DTMzDfDzEfILYUBpaAf56PheMCAygETOVWan5Ee1Vylgkp6TnrAVJ4CKLgkVzEuAaiQTPfI9LOp6nQebB1LDMnch58tJmPcVQ5jUvqQTPx35RJbF8kU1z7sn5JZ8LFBt4mH6gzDIat2GK_JRWlXEW9OsU--Xp7no7d08vH6PhpOUsczvUmlRcsXOgPgeQHIaZYxYUvrmFBWyqJYMKWBgoRCWKuky0XRdhhymetcA--Th-PeJvj23rgx6yo6XK1sjX4bTSeAcaZF1qL3_9Cl34a6va6lJOXAKXQL6ZFy7W8xYGmaUK1t2BsKphNsOsGmE2xOgtuZu-NMhYh_vGJaSiX4L-FBdPg</recordid><startdate>201601</startdate><enddate>201601</enddate><creator>Xuanyao Fong</creator><creator>Yusung Kim</creator><creator>Yogendra, Karthik</creator><creator>Deliang Fan</creator><creator>Sengupta, Abhronil</creator><creator>Raghunathan, Anand</creator><creator>Roy, Kaushik</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>201601</creationdate><title>Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives</title><author>Xuanyao Fong ; Yusung Kim ; Yogendra, Karthik ; Deliang Fan ; Sengupta, Abhronil ; Raghunathan, Anand ; Roy, Kaushik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-5aea3b960038d0e316624afac247a55ddb27901050d4aa75c84d47a2e35898903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Boolean logic</topic><topic>CMOS</topic><topic>Computer aided design</topic><topic>Design engineering</topic><topic>Devices</topic><topic>Frequency modulation</topic><topic>Logic</topic><topic>magnetic tunnel junction (MTJ)</topic><topic>Magnetic tunneling</topic><topic>Magnetization</topic><topic>Nanostructure</topic><topic>neuromorphic computing</topic><topic>non-Boolean logic</topic><topic>nonvolatile memory</topic><topic>Perpendicular magnetic anisotropy</topic><topic>post-CMOS</topic><topic>Saturation magnetization</topic><topic>Spin valves</topic><topic>spin-transfer torque (STT)</topic><topic>spintronics</topic><topic>State variable</topic><topic>Torque</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xuanyao Fong</creatorcontrib><creatorcontrib>Yusung Kim</creatorcontrib><creatorcontrib>Yogendra, Karthik</creatorcontrib><creatorcontrib>Deliang Fan</creatorcontrib><creatorcontrib>Sengupta, Abhronil</creatorcontrib><creatorcontrib>Raghunathan, Anand</creatorcontrib><creatorcontrib>Roy, Kaushik</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xuanyao Fong</au><au>Yusung Kim</au><au>Yogendra, Karthik</au><au>Deliang Fan</au><au>Sengupta, Abhronil</au><au>Raghunathan, Anand</au><au>Roy, Kaushik</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives</atitle><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle><stitle>TCAD</stitle><date>2016-01</date><risdate>2016</risdate><volume>35</volume><issue>1</issue><spage>1</spage><epage>22</epage><pages>1-22</pages><issn>0278-0070</issn><eissn>1937-4151</eissn><coden>ITCSDI</coden><abstract>As CMOS technology begins to face significant scaling challenges, considerable research efforts are being directed to investigate alternative device technologies that can serve as a replacement for CMOS. Spintronic devices, which utilize the spin of electrons as the state variable for computation, have recently emerged as one of the leading candidates for post-CMOS technology. Recent experiments have shown that a nano-magnet can be switched by a spin-polarized current and this has led to a number of novel device proposals over the past few years. In this paper, we provide a review of different mechanisms that manipulate the state of a nano-magnet using current-induced spin-transfer torque and demonstrate how such mechanisms have been engineered to develop device structures for energy-efficient on-chip memory and logic.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCAD.2015.2481793</doi><tpages>22</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0278-0070 |
| ispartof | IEEE transactions on computer-aided design of integrated circuits and systems, 2016-01, Vol.35 (1), p.1-22 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Boolean logic CMOS Computer aided design Design engineering Devices Frequency modulation Logic magnetic tunnel junction (MTJ) Magnetic tunneling Magnetization Nanostructure neuromorphic computing non-Boolean logic nonvolatile memory Perpendicular magnetic anisotropy post-CMOS Saturation magnetization Spin valves spin-transfer torque (STT) spintronics State variable Torque |
| title | Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T16%3A25%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Spin-Transfer%20Torque%20Devices%20for%20Logic%20and%20Memory:%20Prospects%20and%20Perspectives&rft.jtitle=IEEE%20transactions%20on%20computer-aided%20design%20of%20integrated%20circuits%20and%20systems&rft.au=Xuanyao%20Fong&rft.date=2016-01&rft.volume=35&rft.issue=1&rft.spage=1&rft.epage=22&rft.pages=1-22&rft.issn=0278-0070&rft.eissn=1937-4151&rft.coden=ITCSDI&rft_id=info:doi/10.1109/TCAD.2015.2481793&rft_dat=%3Cproquest_RIE%3E1793232946%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1751303100&rft_id=info:pmid/&rft_ieee_id=7295574&rfr_iscdi=true |