High field characteristics of thin film metal electrodes relevant to field emission displays
For large-area FED operation, it is necessary to use spacers between the anode and cathode to prevent collapse caused by a differential pressure of at least one atmosphere. These spacers must be mechanically strong enough and have a high breakdown voltage. The higher the voltage the spacer can withs...
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| creator | Xianyun Ma Muzykov, P.G. Sudarshan, T.S. |
| description | For large-area FED operation, it is necessary to use spacers between the anode and cathode to prevent collapse caused by a differential pressure of at least one atmosphere. These spacers must be mechanically strong enough and have a high breakdown voltage. The higher the voltage the spacer can withstand the greater will be the brightness and contrast of the FED. In order to determine the theoretical limit to which spacers can be stressed in a vacuum gap, the high field characteristics of the plain vacuum thin film electrodes, between which the spacers are placed, must be investigated. In this study, the FEA cathode and the phosphor anode are represented by thin-film metal electrodes. This paper will address issues related to the prebreakdown and breakdown characteristics of metal thin film micrometric gaps. The results presented here can be used to define the theoretical limits to which plain vacuum gaps can be stressed in FEDs. |
| doi_str_mv | 10.1109/IVMC.1998.728638 |
| format | Conference Proceeding |
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These spacers must be mechanically strong enough and have a high breakdown voltage. The higher the voltage the spacer can withstand the greater will be the brightness and contrast of the FED. In order to determine the theoretical limit to which spacers can be stressed in a vacuum gap, the high field characteristics of the plain vacuum thin film electrodes, between which the spacers are placed, must be investigated. In this study, the FEA cathode and the phosphor anode are represented by thin-film metal electrodes. This paper will address issues related to the prebreakdown and breakdown characteristics of metal thin film micrometric gaps. The results presented here can be used to define the theoretical limits to which plain vacuum gaps can be stressed in FEDs.</description><identifier>ISBN: 9780780350960</identifier><identifier>ISBN: 0780350960</identifier><identifier>DOI: 10.1109/IVMC.1998.728638</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anodes ; Cathodes ; Chromium ; Electric breakdown ; Electrodes ; Flat panel displays ; Gold ; Substrates ; Transistors ; Vacuum breakdown</subject><ispartof>Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. 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The results presented here can be used to define the theoretical limits to which plain vacuum gaps can be stressed in FEDs.</description><subject>Anodes</subject><subject>Cathodes</subject><subject>Chromium</subject><subject>Electric breakdown</subject><subject>Electrodes</subject><subject>Flat panel displays</subject><subject>Gold</subject><subject>Substrates</subject><subject>Transistors</subject><subject>Vacuum breakdown</subject><isbn>9780780350960</isbn><isbn>0780350960</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jkELgkAUhBciKMp7dHp_INvVNPcsRR26RadAFn3mi1Vj3xL47xPq3DAwAx8DI8RKyVApqbfn2yUPldZZuI-yNM4mItD7TI6OE6lTORMB81OO2iWJipK5uJ_o0UBNaCsoG-NM6dEReyoZ-hp8Q91IbQstemMBLZbe9RUyuLG_TefB9789tsRMfQcV8cuagZdiWhvLGPxyIdbHwzU_bQgRi5ej1rih-F6N_8IPVvFD3A</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Xianyun Ma</creator><creator>Muzykov, P.G.</creator><creator>Sudarshan, T.S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1998</creationdate><title>High field characteristics of thin film metal electrodes relevant to field emission displays</title><author>Xianyun Ma ; Muzykov, P.G. ; Sudarshan, T.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_7286383</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Anodes</topic><topic>Cathodes</topic><topic>Chromium</topic><topic>Electric breakdown</topic><topic>Electrodes</topic><topic>Flat panel displays</topic><topic>Gold</topic><topic>Substrates</topic><topic>Transistors</topic><topic>Vacuum breakdown</topic><toplevel>online_resources</toplevel><creatorcontrib>Xianyun Ma</creatorcontrib><creatorcontrib>Muzykov, P.G.</creatorcontrib><creatorcontrib>Sudarshan, T.S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xianyun Ma</au><au>Muzykov, P.G.</au><au>Sudarshan, T.S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High field characteristics of thin film metal electrodes relevant to field emission displays</atitle><btitle>Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382)</btitle><stitle>IVMC</stitle><date>1998</date><risdate>1998</risdate><spage>59</spage><epage>60</epage><pages>59-60</pages><isbn>9780780350960</isbn><isbn>0780350960</isbn><abstract>For large-area FED operation, it is necessary to use spacers between the anode and cathode to prevent collapse caused by a differential pressure of at least one atmosphere. These spacers must be mechanically strong enough and have a high breakdown voltage. The higher the voltage the spacer can withstand the greater will be the brightness and contrast of the FED. In order to determine the theoretical limit to which spacers can be stressed in a vacuum gap, the high field characteristics of the plain vacuum thin film electrodes, between which the spacers are placed, must be investigated. In this study, the FEA cathode and the phosphor anode are represented by thin-film metal electrodes. This paper will address issues related to the prebreakdown and breakdown characteristics of metal thin film micrometric gaps. The results presented here can be used to define the theoretical limits to which plain vacuum gaps can be stressed in FEDs.</abstract><pub>IEEE</pub><doi>10.1109/IVMC.1998.728638</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9780780350960 |
| ispartof | Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382), 1998, p.59-60 |
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| language | eng |
| recordid | cdi_ieee_primary_728638 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Anodes Cathodes Chromium Electric breakdown Electrodes Flat panel displays Gold Substrates Transistors Vacuum breakdown |
| title | High field characteristics of thin film metal electrodes relevant to field emission displays |
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