SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition

HfO 2 layers, 25-Å thick, were grown by cyclic Hf sputter deposition and room temperature oxidation steps on chemically oxidized Si(001). Subsequent in situ annealing and TiN deposition yield a high-κ gate-stack for which the original 8-Å-thick SiO 2 layer is eliminated, as confirmed by transmission...

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Veröffentlicht in:	IEEE transactions on electron devices 2015-09, Vol.62 (9), p.2878-2882
Hauptverfasser:	Jamison, Paul C., Tsunoda, Takaaki, Tuan Anh Vo, Juntao Li, Jagannathan, Hemanth, Shinde, Sanjay R., Paruchuri, Vamsi K., Gall, Daniel
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Dielectrics Hafnium compounds HfO high-k dielectrics interface scavenging Logic gates MOSFET Oxidation physical vapor deposition (PVD) Silicon SiO₂ interlayer Transistors
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