Investigations of Thermomechanical Stress Induced by TSV-Middle (Through-Silicon via) in 3-D ICs by Means of CMOS Sensors and Finite-Element Method

This paper aims at determining thermomechanical stress variations induced by annealed copper filled through-silicon via (TSV) in single crystalline silicon using metal-oxide-semiconductor (MOS) rosette sensors. These eight branches sensors were specifically designed and embedded in a 65-nm CMOS tech...

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Veröffentlicht in:IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2015-08, Vol.5 (8), p.1085-1092
Hauptverfasser: Ewuame, Komi Atchou, Fiori, Vincent, Inal, Karim, Bouchard, Pierre-Olivier, Gallois-Garreignot, Sebastien, Lionti, Sylvain, Tavernier, Clement, Jaouen, Herve
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container_title IEEE transactions on components, packaging, and manufacturing technology (2011)
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creator Ewuame, Komi Atchou
Fiori, Vincent
Inal, Karim
Bouchard, Pierre-Olivier
Gallois-Garreignot, Sebastien
Lionti, Sylvain
Tavernier, Clement
Jaouen, Herve
description This paper aims at determining thermomechanical stress variations induced by annealed copper filled through-silicon via (TSV) in single crystalline silicon using metal-oxide-semiconductor (MOS) rosette sensors. These eight branches sensors were specifically designed and embedded in a 65-nm CMOS technology test vehicle. An in-house four-point bending tool was employed to calibrate and to extract the six independent piezoresistive coefficients. Through the piezoresistive relations, the stress tensor was evaluated by carrying out electrical measurements on wafer splits. A finite-element approach was also adopted to evaluate numerically the stresses and the expected mobility variations induced by TSV. According to this paper, a large variation of stresses (up to 100 MPa) in the sensor area was estimated, suggesting possible sensor design improvements to better accuracy. A good agreement was obtained between numerical and experimental results, except for the orthoradial component, which was found slightly compressive experimentally. Based on a critical analysis of the experimental-numerical methodology and results detailed in this paper, guidelines are drawn to get better accuracy through the improvement of MOS size and positions as well as recommendations regarding test strategy to overcome process variability. In the longer term, such improvements should lead to the definition of a comprehensive strategy for mechanical stress probing with in situ structures in advanced semiconductor products.
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_7164297</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7164297</ieee_id><sourcerecordid>3850641941</sourcerecordid><originalsourceid>FETCH-LOGICAL-c399t-24232c681d38df7e791c7d6d0fcacb9a03d45f28236241e2a4fbefee9cba6e063</originalsourceid><addsrcrecordid>eNo9kc-K2zAQxk1poUu6L9BeBL3sHpzqj2Vbx8VNuoGEFOz2KhRpvNbiSFnJCeQ59oXr1CFzmWH4fR_DfEnyleA5IVj8aKrfm2ZOMeFzmmUcC_EhuaOE5ykTJf94mzn-nNzH-IrH4iUuMLtL3lfuBHGwL2qw3kXkW9R0EPZ-D7pTzmrVo3oIECNaOXPUYNDujJr6b7qxxvSAHpou-ONLl9a2t9o7dLLqEVmHWPoTrap4wTegJutqs61RDS76EJFyBi2tswOkix724IYRHDpvviSfWtVHuL_2WfJnuWiq53S9_bWqntapZkIMKc0oozoviWGlaQsoBNGFyQ1utdI7oTAzGW9pSVlOMwJUZe0OWgChdyoHnLNZ8jj5dqqXh2D3KpylV1Y-P63lZYcJpYTw8kRG9vvEHoJ_O44fk6_-GNx4niQFLTEnguKRohOlg48xQHuzJVhespL_s5KXrOQ1q1H0bRJZALgJCpJnVBTsH5c5jyI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1728051920</pqid></control><display><type>article</type><title>Investigations of Thermomechanical Stress Induced by TSV-Middle (Through-Silicon via) in 3-D ICs by Means of CMOS Sensors and Finite-Element Method</title><source>IEEE Electronic Library (IEL)</source><creator>Ewuame, Komi Atchou ; Fiori, Vincent ; Inal, Karim ; Bouchard, Pierre-Olivier ; Gallois-Garreignot, Sebastien ; Lionti, Sylvain ; Tavernier, Clement ; Jaouen, Herve</creator><creatorcontrib>Ewuame, Komi Atchou ; Fiori, Vincent ; Inal, Karim ; Bouchard, Pierre-Olivier ; Gallois-Garreignot, Sebastien ; Lionti, Sylvain ; Tavernier, Clement ; Jaouen, Herve</creatorcontrib><description>This paper aims at determining thermomechanical stress variations induced by annealed copper filled through-silicon via (TSV) in single crystalline silicon using metal-oxide-semiconductor (MOS) rosette sensors. These eight branches sensors were specifically designed and embedded in a 65-nm CMOS technology test vehicle. An in-house four-point bending tool was employed to calibrate and to extract the six independent piezoresistive coefficients. Through the piezoresistive relations, the stress tensor was evaluated by carrying out electrical measurements on wafer splits. A finite-element approach was also adopted to evaluate numerically the stresses and the expected mobility variations induced by TSV. According to this paper, a large variation of stresses (up to 100 MPa) in the sensor area was estimated, suggesting possible sensor design improvements to better accuracy. A good agreement was obtained between numerical and experimental results, except for the orthoradial component, which was found slightly compressive experimentally. Based on a critical analysis of the experimental-numerical methodology and results detailed in this paper, guidelines are drawn to get better accuracy through the improvement of MOS size and positions as well as recommendations regarding test strategy to overcome process variability. In the longer term, such improvements should lead to the definition of a comprehensive strategy for mechanical stress probing with in situ structures in advanced semiconductor products.</description><identifier>ISSN: 2156-3950</identifier><identifier>ISSN: 1070-9886</identifier><identifier>EISSN: 2156-3985</identifier><identifier>DOI: 10.1109/TCPMT.2015.2445099</identifier><identifier>CODEN: ITCPC8</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Copper ; Engineering Sciences ; Finite-element method simulation ; Materials ; Piezoresistance ; piezoresistive ; residual stress ; Sensors ; Silicon ; Stress measurement ; stress sensor ; Tensile stress ; thermomechanical ; through-silicon via (TSV)</subject><ispartof>IEEE transactions on components, packaging, and manufacturing technology (2011), 2015-08, Vol.5 (8), p.1085-1092</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2015</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-24232c681d38df7e791c7d6d0fcacb9a03d45f28236241e2a4fbefee9cba6e063</citedby><cites>FETCH-LOGICAL-c399t-24232c681d38df7e791c7d6d0fcacb9a03d45f28236241e2a4fbefee9cba6e063</cites><orcidid>0000-0002-1400-5799</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7164297$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,886,27928,27929,54762</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7164297$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://minesparis-psl.hal.science/hal-01221158$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Ewuame, Komi Atchou</creatorcontrib><creatorcontrib>Fiori, Vincent</creatorcontrib><creatorcontrib>Inal, Karim</creatorcontrib><creatorcontrib>Bouchard, Pierre-Olivier</creatorcontrib><creatorcontrib>Gallois-Garreignot, Sebastien</creatorcontrib><creatorcontrib>Lionti, Sylvain</creatorcontrib><creatorcontrib>Tavernier, Clement</creatorcontrib><creatorcontrib>Jaouen, Herve</creatorcontrib><title>Investigations of Thermomechanical Stress Induced by TSV-Middle (Through-Silicon via) in 3-D ICs by Means of CMOS Sensors and Finite-Element Method</title><title>IEEE transactions on components, packaging, and manufacturing technology (2011)</title><addtitle>TCPMT</addtitle><description>This paper aims at determining thermomechanical stress variations induced by annealed copper filled through-silicon via (TSV) in single crystalline silicon using metal-oxide-semiconductor (MOS) rosette sensors. These eight branches sensors were specifically designed and embedded in a 65-nm CMOS technology test vehicle. An in-house four-point bending tool was employed to calibrate and to extract the six independent piezoresistive coefficients. Through the piezoresistive relations, the stress tensor was evaluated by carrying out electrical measurements on wafer splits. A finite-element approach was also adopted to evaluate numerically the stresses and the expected mobility variations induced by TSV. According to this paper, a large variation of stresses (up to 100 MPa) in the sensor area was estimated, suggesting possible sensor design improvements to better accuracy. A good agreement was obtained between numerical and experimental results, except for the orthoradial component, which was found slightly compressive experimentally. Based on a critical analysis of the experimental-numerical methodology and results detailed in this paper, guidelines are drawn to get better accuracy through the improvement of MOS size and positions as well as recommendations regarding test strategy to overcome process variability. In the longer term, such improvements should lead to the definition of a comprehensive strategy for mechanical stress probing with in situ structures in advanced semiconductor products.</description><subject>Copper</subject><subject>Engineering Sciences</subject><subject>Finite-element method simulation</subject><subject>Materials</subject><subject>Piezoresistance</subject><subject>piezoresistive</subject><subject>residual stress</subject><subject>Sensors</subject><subject>Silicon</subject><subject>Stress measurement</subject><subject>stress sensor</subject><subject>Tensile stress</subject><subject>thermomechanical</subject><subject>through-silicon via (TSV)</subject><issn>2156-3950</issn><issn>1070-9886</issn><issn>2156-3985</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kc-K2zAQxk1poUu6L9BeBL3sHpzqj2Vbx8VNuoGEFOz2KhRpvNbiSFnJCeQ59oXr1CFzmWH4fR_DfEnyleA5IVj8aKrfm2ZOMeFzmmUcC_EhuaOE5ykTJf94mzn-nNzH-IrH4iUuMLtL3lfuBHGwL2qw3kXkW9R0EPZ-D7pTzmrVo3oIECNaOXPUYNDujJr6b7qxxvSAHpou-ONLl9a2t9o7dLLqEVmHWPoTrap4wTegJutqs61RDS76EJFyBi2tswOkix724IYRHDpvviSfWtVHuL_2WfJnuWiq53S9_bWqntapZkIMKc0oozoviWGlaQsoBNGFyQ1utdI7oTAzGW9pSVlOMwJUZe0OWgChdyoHnLNZ8jj5dqqXh2D3KpylV1Y-P63lZYcJpYTw8kRG9vvEHoJ_O44fk6_-GNx4niQFLTEnguKRohOlg48xQHuzJVhespL_s5KXrOQ1q1H0bRJZALgJCpJnVBTsH5c5jyI</recordid><startdate>201508</startdate><enddate>201508</enddate><creator>Ewuame, Komi Atchou</creator><creator>Fiori, Vincent</creator><creator>Inal, Karim</creator><creator>Bouchard, Pierre-Olivier</creator><creator>Gallois-Garreignot, Sebastien</creator><creator>Lionti, Sylvain</creator><creator>Tavernier, Clement</creator><creator>Jaouen, Herve</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><general>Institute of Electrical and Electronics Engineers (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-1400-5799</orcidid></search><sort><creationdate>201508</creationdate><title>Investigations of Thermomechanical Stress Induced by TSV-Middle (Through-Silicon via) in 3-D ICs by Means of CMOS Sensors and Finite-Element Method</title><author>Ewuame, Komi Atchou ; Fiori, Vincent ; Inal, Karim ; Bouchard, Pierre-Olivier ; Gallois-Garreignot, Sebastien ; Lionti, Sylvain ; Tavernier, Clement ; Jaouen, Herve</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-24232c681d38df7e791c7d6d0fcacb9a03d45f28236241e2a4fbefee9cba6e063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Copper</topic><topic>Engineering Sciences</topic><topic>Finite-element method simulation</topic><topic>Materials</topic><topic>Piezoresistance</topic><topic>piezoresistive</topic><topic>residual stress</topic><topic>Sensors</topic><topic>Silicon</topic><topic>Stress measurement</topic><topic>stress sensor</topic><topic>Tensile stress</topic><topic>thermomechanical</topic><topic>through-silicon via (TSV)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ewuame, Komi Atchou</creatorcontrib><creatorcontrib>Fiori, Vincent</creatorcontrib><creatorcontrib>Inal, Karim</creatorcontrib><creatorcontrib>Bouchard, Pierre-Olivier</creatorcontrib><creatorcontrib>Gallois-Garreignot, Sebastien</creatorcontrib><creatorcontrib>Lionti, Sylvain</creatorcontrib><creatorcontrib>Tavernier, Clement</creatorcontrib><creatorcontrib>Jaouen, Herve</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE transactions on components, packaging, and manufacturing technology (2011)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ewuame, Komi Atchou</au><au>Fiori, Vincent</au><au>Inal, Karim</au><au>Bouchard, Pierre-Olivier</au><au>Gallois-Garreignot, Sebastien</au><au>Lionti, Sylvain</au><au>Tavernier, Clement</au><au>Jaouen, Herve</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigations of Thermomechanical Stress Induced by TSV-Middle (Through-Silicon via) in 3-D ICs by Means of CMOS Sensors and Finite-Element Method</atitle><jtitle>IEEE transactions on components, packaging, and manufacturing technology (2011)</jtitle><stitle>TCPMT</stitle><date>2015-08</date><risdate>2015</risdate><volume>5</volume><issue>8</issue><spage>1085</spage><epage>1092</epage><pages>1085-1092</pages><issn>2156-3950</issn><issn>1070-9886</issn><eissn>2156-3985</eissn><coden>ITCPC8</coden><abstract>This paper aims at determining thermomechanical stress variations induced by annealed copper filled through-silicon via (TSV) in single crystalline silicon using metal-oxide-semiconductor (MOS) rosette sensors. These eight branches sensors were specifically designed and embedded in a 65-nm CMOS technology test vehicle. An in-house four-point bending tool was employed to calibrate and to extract the six independent piezoresistive coefficients. Through the piezoresistive relations, the stress tensor was evaluated by carrying out electrical measurements on wafer splits. A finite-element approach was also adopted to evaluate numerically the stresses and the expected mobility variations induced by TSV. According to this paper, a large variation of stresses (up to 100 MPa) in the sensor area was estimated, suggesting possible sensor design improvements to better accuracy. A good agreement was obtained between numerical and experimental results, except for the orthoradial component, which was found slightly compressive experimentally. Based on a critical analysis of the experimental-numerical methodology and results detailed in this paper, guidelines are drawn to get better accuracy through the improvement of MOS size and positions as well as recommendations regarding test strategy to overcome process variability. In the longer term, such improvements should lead to the definition of a comprehensive strategy for mechanical stress probing with in situ structures in advanced semiconductor products.</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/TCPMT.2015.2445099</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-1400-5799</orcidid></addata></record>
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subjects Copper
Engineering Sciences
Finite-element method simulation
Materials
Piezoresistance
piezoresistive
residual stress
Sensors
Silicon
Stress measurement
stress sensor
Tensile stress
thermomechanical
through-silicon via (TSV)
title Investigations of Thermomechanical Stress Induced by TSV-Middle (Through-Silicon via) in 3-D ICs by Means of CMOS Sensors and Finite-Element Method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T07%3A22%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigations%20of%20Thermomechanical%20Stress%20Induced%20by%20TSV-Middle%20(Through-Silicon%20via)%20in%203-D%20ICs%20by%20Means%20of%20CMOS%20Sensors%20and%20Finite-Element%20Method&rft.jtitle=IEEE%20transactions%20on%20components,%20packaging,%20and%20manufacturing%20technology%20(2011)&rft.au=Ewuame,%20Komi%20Atchou&rft.date=2015-08&rft.volume=5&rft.issue=8&rft.spage=1085&rft.epage=1092&rft.pages=1085-1092&rft.issn=2156-3950&rft.eissn=2156-3985&rft.coden=ITCPC8&rft_id=info:doi/10.1109/TCPMT.2015.2445099&rft_dat=%3Cproquest_RIE%3E3850641941%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1728051920&rft_id=info:pmid/&rft_ieee_id=7164297&rfr_iscdi=true