Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs
In this paper, we develop a correlated noise model for bipolar transistors from an accurate nonquasi-static model. The proposed noise model includes the signal delay through base-collector space-charge region and is implemented using four extra nodes. We also present a simplified version of the same...
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| Veröffentlicht in: | IEEE transactions on electron devices 2015-08, Vol.62 (8), p.2384-2389 |
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| container_title | IEEE transactions on electron devices |
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| creator | Kumar, Khamesh Chakravorty, Anjan Fischer, Gerhard G. Wipf, Christian |
| description | In this paper, we develop a correlated noise model for bipolar transistors from an accurate nonquasi-static model. The proposed noise model includes the signal delay through base-collector space-charge region and is implemented using four extra nodes. We also present a simplified version of the same model that requires only two extra nodes. A further simplified version that uses only one extra node is found to be identical with a state-of-the-art correlated noise model. When compared with the device simulation data, our proposed models show improved accuracy compared with the existing state-of-the-art noise models. |
| doi_str_mv | 10.1109/TED.2015.2444472 |
| format | Article |
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| source | IEEE Electronic Library (IEL) |
| subjects | Accuracy Base-collector space-charge region (BC-SCR) delay compact model Data models Integrated circuit modeling Noise noise correlation nonquasi-static (NQS) effects Numerical models SiGe HBTs Silicon Verilog-A implementation |
| title | Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs |
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