Analysis of Effective Gate Length Modulation by X-Ray Irradiation for Fully Depleted SOI p-MOSFETs

An X-ray irradiation degradation mechanism has been investigated for fully depleted-silicon-on-insulator (FD-SOI) p-channel MOSFETs (p-MOSFETs). It is found that the drain current degradation by the X-ray irradiation has gate length dependence showing 20% degradation for L = 0.2 μm, while 8% for L =...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2015-08, Vol.62 (8), p.2371-2376
Hauptverfasser:	Kurachi, Ikuo, Kobayashi, Kazuo, Okihara, Masao, Kasai, Hiroki, Hatsui, Takaki, Hara, Kazuhiko, Miyoshi, Toshinobu, Arai, Yasuo
Format:	Artikel
Sprache:	eng
Schlagworte:	Degradation Fully depleted-silicon-on-insulator (FD-SOI) gate length modulation Logic gates Modulation MOSFET MOSFET circuits Radiation effects Resistance sidewall spacer X-ray radiation hardness
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!