$A 310-340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25- \mum InP HBT Technology$

A 310-340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25- \mum InP HBT Technology

A THz voltage-controlled oscillator (VCO) has been developed in this work based on a 0.25- μm InP heterojunction bipolar transistor (HBT) technology. The cross-coupled push-push oscillator adopted a novel coupled-line topology, in which the DC blocking capacitors and the load inductance are replaced...

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Veröffentlicht in:	IEEE transactions on terahertz science and technology 2015-07, Vol.5 (4), p.652-654
Hauptverfasser:	Daekeun Yoon, Jongwon Yun, Jae-Sung Rieh
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitors Frequency control Frequency measurement heterjunction bipolar transistor (HBT) Heterojunction bipolar transistors Indium phosphide Inductance Oscillators Tuning voltage-controlled oscillators (VCOs)
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