All-solid-source MBE growth of AlGaInAsP-based optoelectronic devices

All-solid source molecular beam epitaxy, SS-MBE, has opened the possibility of growing GaInAsP and AlGaInP semiconductors over a wide band-gap range without use of toxic gases as source materials. In particular, the key discovery facilitating a controlled alloying of phosphorus with other elements h...

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Bibliographische Detailangaben

Hauptverfasser:	Pessa, M., Toivonen, M., Savolainen, P., Kongas, J., Murison, R., Panarello, T., Nabiev, R.F., Jansen, M., Corvini, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Alloying Gas lasers Gases Materials handling Molecular beam epitaxial growth Optical materials Photonic band gap Resonance Semiconductor materials Solids
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