Comparison of the effects of different lateral boundary conditions on transport in resonant tunneling diodes
Small resonant tunneling diodes (RTDs) will be required to achieve high speed with low power dissipation. We have modeled transport in RTDs including lateral boundary conditions, and find that the peak-to-valley-current ratio of small RTDs can be significantly degraded. For an example in which p-typ...
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| creator | Hunter, A.T. Schulman, J.N. |
| description | Small resonant tunneling diodes (RTDs) will be required to achieve high speed with low power dissipation. We have modeled transport in RTDs including lateral boundary conditions, and find that the peak-to-valley-current ratio of small RTDs can be significantly degraded. For an example in which p-type regions were used to restrict the electron current to the central 200 nm of the RTD, the peak-to-valley-current ratio was reduced to 2.8:1 from 26:1 calculated for a large area device. Similar, but smaller, effects were calculated when semi-insulating regions (as might be produced by a damage implant) were used to define the device area. |
| doi_str_mv | 10.1109/ISCS.1998.711744 |
| format | Conference Proceeding |
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We have modeled transport in RTDs including lateral boundary conditions, and find that the peak-to-valley-current ratio of small RTDs can be significantly degraded. For an example in which p-type regions were used to restrict the electron current to the central 200 nm of the RTD, the peak-to-valley-current ratio was reduced to 2.8:1 from 26:1 calculated for a large area device. Similar, but smaller, effects were calculated when semi-insulating regions (as might be produced by a damage implant) were used to define the device area.</description><identifier>ISBN: 9780750305563</identifier><identifier>ISBN: 0750305568</identifier><identifier>DOI: 10.1109/ISCS.1998.711744</identifier><language>eng</language><publisher>IEEE</publisher><subject>Boundary conditions ; Degradation ; Diodes ; Electrons ; Electrostatics ; Laboratories ; Physics ; Power dissipation ; Resonance ; Resonant tunneling devices</subject><ispartof>Compound Semiconductors 1997. 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Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors</title><addtitle>ISCS</addtitle><description>Small resonant tunneling diodes (RTDs) will be required to achieve high speed with low power dissipation. We have modeled transport in RTDs including lateral boundary conditions, and find that the peak-to-valley-current ratio of small RTDs can be significantly degraded. For an example in which p-type regions were used to restrict the electron current to the central 200 nm of the RTD, the peak-to-valley-current ratio was reduced to 2.8:1 from 26:1 calculated for a large area device. Similar, but smaller, effects were calculated when semi-insulating regions (as might be produced by a damage implant) were used to define the device area.</description><subject>Boundary conditions</subject><subject>Degradation</subject><subject>Diodes</subject><subject>Electrons</subject><subject>Electrostatics</subject><subject>Laboratories</subject><subject>Physics</subject><subject>Power dissipation</subject><subject>Resonance</subject><subject>Resonant tunneling devices</subject><isbn>9780750305563</isbn><isbn>0750305568</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkE9LAzEQxQMiKLV38ZQvsHWmSTbZoyz-KRR6qJ5LdjOrkW1SkvTgtzdS5_LmwZsfj2HsHmGFCN3jZt_vV9h1ZqURtZRXbNlpA1qBAKVaccOWOX9DHaUMSHHL5j4eTzb5HAOPEy9fxGmaaCz5zzpf90Sh8NkWSnbmQzwHZ9MPH2NwvvgYajDwkmzIp5gK94EnqjRbj8o5BJp9-Kyg6CjfsevJzpmW_7pgHy_P7_1bs929bvqnbeNr6dJoB9a0qNeIw6Rs64RxI5Bbg3NSoun0hKoFkl2LwtjBCkA7gtTSEKxRiQV7uHA9ER1OyR9r48PlJeIXqtRYYw</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Hunter, A.T.</creator><creator>Schulman, J.N.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>Comparison of the effects of different lateral boundary conditions on transport in resonant tunneling diodes</title><author>Hunter, A.T. ; Schulman, J.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-7d0a8617211bf5a6d38dc0ed20dd441897f1560e496138aba301ac04748e02153</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Boundary conditions</topic><topic>Degradation</topic><topic>Diodes</topic><topic>Electrons</topic><topic>Electrostatics</topic><topic>Laboratories</topic><topic>Physics</topic><topic>Power dissipation</topic><topic>Resonance</topic><topic>Resonant tunneling devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hunter, A.T.</creatorcontrib><creatorcontrib>Schulman, J.N.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hunter, A.T.</au><au>Schulman, J.N.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Comparison of the effects of different lateral boundary conditions on transport in resonant tunneling diodes</atitle><btitle>Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors</btitle><stitle>ISCS</stitle><date>1997</date><risdate>1997</risdate><spage>581</spage><epage>584</epage><pages>581-584</pages><isbn>9780750305563</isbn><isbn>0750305568</isbn><abstract>Small resonant tunneling diodes (RTDs) will be required to achieve high speed with low power dissipation. We have modeled transport in RTDs including lateral boundary conditions, and find that the peak-to-valley-current ratio of small RTDs can be significantly degraded. For an example in which p-type regions were used to restrict the electron current to the central 200 nm of the RTD, the peak-to-valley-current ratio was reduced to 2.8:1 from 26:1 calculated for a large area device. Similar, but smaller, effects were calculated when semi-insulating regions (as might be produced by a damage implant) were used to define the device area.</abstract><pub>IEEE</pub><doi>10.1109/ISCS.1998.711744</doi><tpages>4</tpages></addata></record> |
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| ispartof | Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.581-584 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boundary conditions Degradation Diodes Electrons Electrostatics Laboratories Physics Power dissipation Resonance Resonant tunneling devices |
| title | Comparison of the effects of different lateral boundary conditions on transport in resonant tunneling diodes |
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