MOCVD growth of InGaN multiple quantum well LEDs and laser diodes
The MOCVD growth of InGaN/GaN multiple quantum well (MQW) structures for blue LEDs and lasers has been investigated. (1) The structural and optical properties of the layers have been characterized by X-ray diffraction and photoluminescence. (2) By incorporating an MQW structure as the active region...
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| creator | Mack, M.P. Abare, A.C. Kozodoy, P. Hanson, M. Keller, S. Mishra, U.K. Coldren, L.A. DenBaars, S.P. |
| description | The MOCVD growth of InGaN/GaN multiple quantum well (MQW) structures for blue LEDs and lasers has been investigated. (1) The structural and optical properties of the layers have been characterized by X-ray diffraction and photoluminescence. (2) By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 mA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. (3) Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with threshold current densities as low as 19 kA/cm/sup 2/ were observed for 5/spl times/800 /spl mu/m/sup 2/ lasers with uncoated reactive ion etched (RIE) facets. |
| doi_str_mv | 10.1109/ISCS.1998.711656 |
| format | Conference Proceeding |
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(1) The structural and optical properties of the layers have been characterized by X-ray diffraction and photoluminescence. (2) By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 mA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. (3) Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with threshold current densities as low as 19 kA/cm/sup 2/ were observed for 5/spl times/800 /spl mu/m/sup 2/ lasers with uncoated reactive ion etched (RIE) facets.</description><identifier>ISBN: 9780750305563</identifier><identifier>ISBN: 0750305568</identifier><identifier>DOI: 10.1109/ISCS.1998.711656</identifier><language>eng</language><publisher>IEEE</publisher><subject>Diode lasers ; Gallium nitride ; Light emitting diodes ; MOCVD ; Optical diffraction ; Quantum well devices ; Quantum well lasers ; Stimulated emission ; X-ray diffraction ; X-ray lasers</subject><ispartof>Compound Semiconductors 1997. 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Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors</title><addtitle>ISCS</addtitle><description>The MOCVD growth of InGaN/GaN multiple quantum well (MQW) structures for blue LEDs and lasers has been investigated. (1) The structural and optical properties of the layers have been characterized by X-ray diffraction and photoluminescence. (2) By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 mA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. (3) Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with threshold current densities as low as 19 kA/cm/sup 2/ were observed for 5/spl times/800 /spl mu/m/sup 2/ lasers with uncoated reactive ion etched (RIE) facets.</description><subject>Diode lasers</subject><subject>Gallium nitride</subject><subject>Light emitting diodes</subject><subject>MOCVD</subject><subject>Optical diffraction</subject><subject>Quantum well devices</subject><subject>Quantum well lasers</subject><subject>Stimulated emission</subject><subject>X-ray diffraction</subject><subject>X-ray lasers</subject><isbn>9780750305563</isbn><isbn>0750305568</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj01Lw0AURQdEUGr24mr-QOKbTOYjy5LWGoh2UXVbZjIvGpkkNZNQ_PcG6t3cxYF7uITcM0gYg_yxPBSHhOW5ThRjUsgrEuVKgxLAQQjJb0gUwjcsEUJDxm_J-mVffGzo5zicpy86NLTsd-aVdrOf2pNH-jObfpo7ekbvabXdBGp6R70JOFLXDg7DHblujA8Y_feKvD9t34rnuNrvymJdxS1T2RTL1OpFqWXdSODGgYG0ri3TYHXN0PEMlbY8A8VTpTUXMlfCGstApAtDviIPl90WEY-nse3M-Hu8_OR_VXhGHA</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Mack, M.P.</creator><creator>Abare, A.C.</creator><creator>Kozodoy, P.</creator><creator>Hanson, M.</creator><creator>Keller, S.</creator><creator>Mishra, U.K.</creator><creator>Coldren, L.A.</creator><creator>DenBaars, S.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>MOCVD growth of InGaN multiple quantum well LEDs and laser diodes</title><author>Mack, M.P. ; Abare, A.C. ; Kozodoy, P. ; Hanson, M. ; Keller, S. ; Mishra, U.K. ; Coldren, L.A. ; DenBaars, S.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-62b880486cf603ad0a02ccb180b8c1ed34e78b340732788356975bab105234ee3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Diode lasers</topic><topic>Gallium nitride</topic><topic>Light emitting diodes</topic><topic>MOCVD</topic><topic>Optical diffraction</topic><topic>Quantum well devices</topic><topic>Quantum well lasers</topic><topic>Stimulated emission</topic><topic>X-ray diffraction</topic><topic>X-ray lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mack, M.P.</creatorcontrib><creatorcontrib>Abare, A.C.</creatorcontrib><creatorcontrib>Kozodoy, P.</creatorcontrib><creatorcontrib>Hanson, M.</creatorcontrib><creatorcontrib>Keller, S.</creatorcontrib><creatorcontrib>Mishra, U.K.</creatorcontrib><creatorcontrib>Coldren, L.A.</creatorcontrib><creatorcontrib>DenBaars, S.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mack, M.P.</au><au>Abare, A.C.</au><au>Kozodoy, P.</au><au>Hanson, M.</au><au>Keller, S.</au><au>Mishra, U.K.</au><au>Coldren, L.A.</au><au>DenBaars, S.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>MOCVD growth of InGaN multiple quantum well LEDs and laser diodes</atitle><btitle>Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors</btitle><stitle>ISCS</stitle><date>1997</date><risdate>1997</risdate><spage>367</spage><epage>370</epage><pages>367-370</pages><isbn>9780750305563</isbn><isbn>0750305568</isbn><abstract>The MOCVD growth of InGaN/GaN multiple quantum well (MQW) structures for blue LEDs and lasers has been investigated. (1) The structural and optical properties of the layers have been characterized by X-ray diffraction and photoluminescence. (2) By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 mA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. (3) Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with threshold current densities as low as 19 kA/cm/sup 2/ were observed for 5/spl times/800 /spl mu/m/sup 2/ lasers with uncoated reactive ion etched (RIE) facets.</abstract><pub>IEEE</pub><doi>10.1109/ISCS.1998.711656</doi><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 9780750305563 |
| ispartof | Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.367-370 |
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| language | eng |
| recordid | cdi_ieee_primary_711656 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Diode lasers Gallium nitride Light emitting diodes MOCVD Optical diffraction Quantum well devices Quantum well lasers Stimulated emission X-ray diffraction X-ray lasers |
| title | MOCVD growth of InGaN multiple quantum well LEDs and laser diodes |
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