Very-high-speed InP/InGaAs HBT ICs for optical transmission systems

High-speed ICs for 20-40-Gbit/s time-division multiplexing (TDM) optical transmission systems have been designed and fabricated by using InP/InGaAs heterojunction-bipolar-transistor (HBT) technology. This paper describes four analog ICs and four digital ICs: a five-section cascode distributed amplif...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE journal of solid-state circuits 1998-09, Vol.33 (9), p.1313-1320
Hauptverfasser:	Suzuki, H., Watanabe, K., Ishikawa, K., Masuda, H., Ouchi, K., Tanoue, T., Takeyari, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Distributed amplifiers Gain Heterojunction bipolar transistors High speed optical techniques Indium gallium arsenide Indium phosphide Optical design Stimulated emission Time division multiplexing
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!