Dielectric characterization of microwave assisted chemically vapor deposited diamond

Freestanding polycrystalline diamond films produced by Microwave Plasma Chemical Vapor Deposition (MWCVD) were investigated for high power and high temperature electronic applications. The diamond films were deposited on polished tungsten substrates using 5000 W to I500 W power, 15.33 kPa pressure,...

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Bibliographische Detailangaben

Hauptverfasser:	Heidger, S., Fries-Carr, S., Weimer, J., Jordan, B., Wu, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Capacitors Chemical vapor deposition Dielectric constant Dielectric substrates Frequency Plasma applications Plasma chemistry Plasma temperature Tungsten
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