True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices
Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random tr...
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| Veröffentlicht in: | IEEE journal on emerging and selected topics in circuits and systems 2015-06, Vol.5 (2), p.214-221 |
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| container_title | IEEE journal on emerging and selected topics in circuits and systems |
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| creator | Balatti, Simone Ambrogio, Stefano Zhongqiang Wang Ielmini, Daniele |
| description | Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter. |
| doi_str_mv | 10.1109/JETCAS.2015.2426492 |
| format | Article |
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To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50% of the applied pulses, thus resulting in a bimodal distribution of resistance. 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(IEEE) Jun 2015</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c532t-7c7367d0285ea22c9f70d938108d893d749ca212be1abd46ce79f7ba82f5a81c3</citedby><cites>FETCH-LOGICAL-c532t-7c7367d0285ea22c9f70d938108d893d749ca212be1abd46ce79f7ba82f5a81c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7100946$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7100946$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Balatti, Simone</creatorcontrib><creatorcontrib>Ambrogio, Stefano</creatorcontrib><creatorcontrib>Zhongqiang Wang</creatorcontrib><creatorcontrib>Ielmini, Daniele</creatorcontrib><title>True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices</title><title>IEEE journal on emerging and selected topics in circuits and systems</title><addtitle>JETCAS</addtitle><description>Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter.</description><subject>Electrical resistance measurement</subject><subject>Immune system</subject><subject>Memory reliability</subject><subject>nonvolatile memory</subject><subject>Pulse measurements</subject><subject>random number generation</subject><subject>Resistance</subject><subject>resistive-switching memory (RRAM)</subject><subject>Switches</subject><subject>Transistors</subject><subject>Voltage measurement</subject><issn>2156-3357</issn><issn>2156-3365</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PwkAQhhujiQT5BVw28Vzc722PiIoaIgmgBy_NdneqS6DF3Rbl31tSwlxmDu8zM3miaEjwiBCc3r0-ribj5YhiIkaUU8lTehH1KBEyZkyKy_Ms1HU0CGGN2xKSSM570efKN4AWurTVFr012xw8mkIJXteuKlF-QB_aO527jasPqCrQAoILtdsDWv662ny78gu5Es3_nIX4Xgew6AH2zkC4ia4KvQkwOPV-9P7Uvvocz-bTl8l4FhvBaB0ro5hUFtNEgKbUpIXCNmUJwYlNUmYVT42mhOZAdG65NKDaSK4TWgidEMP60W23d-ernwZCna2rxpftyYwokTKeKKbaFOtSxlcheCiynXdb7Q8ZwdnRY9Z5zI4es5PHlhp2lAOAM6EIximX7B8omm5t</recordid><startdate>20150601</startdate><enddate>20150601</enddate><creator>Balatti, Simone</creator><creator>Ambrogio, Stefano</creator><creator>Zhongqiang Wang</creator><creator>Ielmini, Daniele</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| ispartof | IEEE journal on emerging and selected topics in circuits and systems, 2015-06, Vol.5 (2), p.214-221 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Electrical resistance measurement Immune system Memory reliability nonvolatile memory Pulse measurements random number generation Resistance resistive-switching memory (RRAM) Switches Transistors Voltage measurement |
| title | True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices |
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