Physical Properties and Characteristics of III-V Lasers on Silicon

The development of laser technology based on silicon continues to be of key importance for the advancement of electronic-photonic integration offering the potential for high data rates and reduced energy consumption. Progress was initially hindered due to the inherent indirect band gap of silicon. H...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2015-11, Vol.21 (6), p.377-384
Hauptverfasser:	Read, Graham William, Marko, Igor Pavlovich, Hossain, Nadir, Sweeney, Stephen John
Format:	Artikel
Sprache:	eng
Schlagworte:	Bonding carrier recombination processes efficiency Epitaxial growth III-V epitaxy Optical surface waves photonic integration Silicon silicon photonics Spontaneous emission Substrates temperature sensitivity Threshold current
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