Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory
This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfO x /TiN resistive random access memory devices. For the first time, Pt/HfO x /TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightl...
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| Veröffentlicht in: | IEEE electron device letters 2015-06, Vol.36 (6), p.567-569 |
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| container_title | IEEE electron device letters |
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| creator | Fang, Runchen Chen, Wenhao Gao, Ligang Yu, Weijie Yu, Shimeng |
| description | This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfO x /TiN resistive random access memory devices. For the first time, Pt/HfO x /TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration. |
| doi_str_mv | 10.1109/LED.2015.2420665 |
| format | Article |
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For the first time, Pt/HfO x /TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2015.2420665</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>conduction mechanism ; Electron traps ; Hafnium compounds ; HfO2 ; hopping ; low temperature ; ReRAM ; Resistance ; resistive switching ; RRAM ; Switches ; Temperature ; Temperature measurement ; Tin ; variation</subject><ispartof>IEEE electron device letters, 2015-06, Vol.36 (6), p.567-569</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c259t-d4aa0b2e831986f9333e1d895546adb8e5c72b3f71a96db293440403fcfc24b03</citedby><cites>FETCH-LOGICAL-c259t-d4aa0b2e831986f9333e1d895546adb8e5c72b3f71a96db293440403fcfc24b03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7081349$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27926,27927,54760</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7081349$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fang, Runchen</creatorcontrib><creatorcontrib>Chen, Wenhao</creatorcontrib><creatorcontrib>Gao, Ligang</creatorcontrib><creatorcontrib>Yu, Weijie</creatorcontrib><creatorcontrib>Yu, Shimeng</creatorcontrib><title>Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfO x /TiN resistive random access memory devices. For the first time, Pt/HfO x /TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.</description><subject>conduction mechanism</subject><subject>Electron traps</subject><subject>Hafnium compounds</subject><subject>HfO2</subject><subject>hopping</subject><subject>low temperature</subject><subject>ReRAM</subject><subject>Resistance</subject><subject>resistive switching</subject><subject>RRAM</subject><subject>Switches</subject><subject>Temperature</subject><subject>Temperature measurement</subject><subject>Tin</subject><subject>variation</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1Kw0AYRQdRMFb3gpt5gYnf_CazrLW1QqRQ6jpMJt9gxJgyE3_69ra0uLpwuecuDiG3HHLOwd5X88dcANe5UAKM0Wck41qXDLSR5ySDQnEmOZhLcpXSOwBXqlAZqarhh22w32J041dEOntz0fkRY5fGzic6BLoMq1_24BK2dI3p0H8jXbvPdujp1HtMib5gP8TdNbkI7iPhzSkn5HUx38yWrFo9Pc-mFfNC25G1yjloBJaS29IEK6VE3pZWa2Vc25SofSEaGQrurGkbYaVSoEAGH7xQDcgJgeOvj0NKEUO9jV3v4q7mUB9s1Hsb9cFGfbKxR-6OSIeI__MCSi6VlX9CXVsI</recordid><startdate>201506</startdate><enddate>201506</enddate><creator>Fang, Runchen</creator><creator>Chen, Wenhao</creator><creator>Gao, Ligang</creator><creator>Yu, Weijie</creator><creator>Yu, Shimeng</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201506</creationdate><title>Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory</title><author>Fang, Runchen ; Chen, Wenhao ; Gao, Ligang ; Yu, Weijie ; Yu, Shimeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c259t-d4aa0b2e831986f9333e1d895546adb8e5c72b3f71a96db293440403fcfc24b03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>conduction mechanism</topic><topic>Electron traps</topic><topic>Hafnium compounds</topic><topic>HfO2</topic><topic>hopping</topic><topic>low temperature</topic><topic>ReRAM</topic><topic>Resistance</topic><topic>resistive switching</topic><topic>RRAM</topic><topic>Switches</topic><topic>Temperature</topic><topic>Temperature measurement</topic><topic>Tin</topic><topic>variation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fang, Runchen</creatorcontrib><creatorcontrib>Chen, Wenhao</creatorcontrib><creatorcontrib>Gao, Ligang</creatorcontrib><creatorcontrib>Yu, Weijie</creatorcontrib><creatorcontrib>Yu, Shimeng</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fang, Runchen</au><au>Chen, Wenhao</au><au>Gao, Ligang</au><au>Yu, Weijie</au><au>Yu, Shimeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2015-06</date><risdate>2015</risdate><volume>36</volume><issue>6</issue><spage>567</spage><epage>569</epage><pages>567-569</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfO x /TiN resistive random access memory devices. For the first time, Pt/HfO x /TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.</abstract><pub>IEEE</pub><doi>10.1109/LED.2015.2420665</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | conduction mechanism Electron traps Hafnium compounds HfO2 hopping low temperature ReRAM Resistance resistive switching RRAM Switches Temperature Temperature measurement Tin variation |
| title | Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory |
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