Direct Measurement of Superconducting Tunnel Junction Capacitance
Superconductor-insulator-superconductor (SIS) junction is the key component for millimeter and submillimeter mixers for radio astronomy and environmental science. The capacitance of the SIS mixer determines both the RF and IF performance. Previously, measurements of this capacitance has had high unc...
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| Veröffentlicht in: | IEEE transactions on terahertz science and technology 2015-05, Vol.5 (3), p.464-469 |
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| container_title | IEEE transactions on terahertz science and technology |
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| creator | Aghdam, Parisa Yadranjee Rashid, Hawal Pavolotsky, Alexey Desmaris, Vincent Meledin, Denis Belitsky, Victor |
| description | Superconductor-insulator-superconductor (SIS) junction is the key component for millimeter and submillimeter mixers for radio astronomy and environmental science. The capacitance of the SIS mixer determines both the RF and IF performance. Previously, measurements of this capacitance has had high uncertainty. Herein, we determine the SIS junction capacitance at cryogenic temperature ( ~ 4 K) by direct measurement of the SIS junction impedance at microwave frequencies. The proposed calibration method uses only one short-circuit reference. The SIS junction capacitance measurement is realized by biasing the junction at the different parts of its current-voltage characteristic, thus eliminating a separate measurement of short-circuit standard. In order to verify the measurement results, thin-film capacitors with known capacitance were also measured. The capacitance of four SIS junctions with various areas were measured. The absolute uncertainty of the proposed measurement method was found to vary from 5 to 6.8% amongst different junction areas. |
| doi_str_mv | 10.1109/TTHZ.2015.2413214 |
| format | Article |
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The capacitance of the SIS mixer determines both the RF and IF performance. Previously, measurements of this capacitance has had high uncertainty. Herein, we determine the SIS junction capacitance at cryogenic temperature ( ~ 4 K) by direct measurement of the SIS junction impedance at microwave frequencies. The proposed calibration method uses only one short-circuit reference. The SIS junction capacitance measurement is realized by biasing the junction at the different parts of its current-voltage characteristic, thus eliminating a separate measurement of short-circuit standard. In order to verify the measurement results, thin-film capacitors with known capacitance were also measured. The capacitance of four SIS junctions with various areas were measured. 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The capacitance of the SIS mixer determines both the RF and IF performance. Previously, measurements of this capacitance has had high uncertainty. Herein, we determine the SIS junction capacitance at cryogenic temperature ( ~ 4 K) by direct measurement of the SIS junction impedance at microwave frequencies. The proposed calibration method uses only one short-circuit reference. The SIS junction capacitance measurement is realized by biasing the junction at the different parts of its current-voltage characteristic, thus eliminating a separate measurement of short-circuit standard. In order to verify the measurement results, thin-film capacitors with known capacitance were also measured. The capacitance of four SIS junctions with various areas were measured. The absolute uncertainty of the proposed measurement method was found to vary from 5 to 6.8% amongst different junction areas.</description><subject>Calibration</subject><subject>Capacitance</subject><subject>Capacitance measurement</subject><subject>Junctions</subject><subject>Measurement uncertainty</subject><subject>microwave measurement</subject><subject>submillimeter-wave devices</subject><subject>superconducting microwave devices</subject><subject>Temperature measurement</subject><subject>Transmission line measurements</subject><subject>tunnel junctions</subject><issn>2156-342X</issn><issn>2156-3446</issn><issn>2156-3446</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>D8T</sourceid><recordid>eNo9kE1Lw0AQhoMoWGp_gHjJH0jdnewmm2OpH1UqHhpBvCy7sxMbaZOwmyD-e1NaOpeZF-Z9Dk8U3XI255wV92W5-poD43IOgqfAxUU0AS6zJBUiuzzf8HkdzUL4YePILFW5mESLh9oT9vEbmTB42lPTx20Vb4aOPLaNG7Cvm--4HJqGdvHr0Iy5beKl6QzWvWmQbqKryuwCzU57Gn08PZbLVbJ-f35ZLtYJShB9AjnnhROCg1AsL5hQmZWsACfROUXMCYKMgcytFWC4U9YBoVOiwpwVxNNptDlywy91g9Wdr_fG_-nW1NpTIONxq3FrdnvyQQfS1qLjFRgtU-u0yFFpg-C0tKwiBKRcwUjlRyr6NgRP1ZnLmT7I1Qe5-iBXn-SOnbtjpyai83_OsoKrNP0HQ0t2xw</recordid><startdate>20150501</startdate><enddate>20150501</enddate><creator>Aghdam, Parisa Yadranjee</creator><creator>Rashid, Hawal</creator><creator>Pavolotsky, Alexey</creator><creator>Desmaris, Vincent</creator><creator>Meledin, Denis</creator><creator>Belitsky, Victor</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>ABBSD</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>D8T</scope><scope>F1S</scope><scope>ZZAVC</scope></search><sort><creationdate>20150501</creationdate><title>Direct Measurement of Superconducting Tunnel Junction Capacitance</title><author>Aghdam, Parisa Yadranjee ; Rashid, Hawal ; Pavolotsky, Alexey ; Desmaris, Vincent ; Meledin, Denis ; Belitsky, Victor</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c524t-27119d4412480790486b5092d5cdd8e0d4e260257bb42a1d8bd2ecd84fc709e13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Calibration</topic><topic>Capacitance</topic><topic>Capacitance measurement</topic><topic>Junctions</topic><topic>Measurement uncertainty</topic><topic>microwave measurement</topic><topic>submillimeter-wave devices</topic><topic>superconducting microwave devices</topic><topic>Temperature measurement</topic><topic>Transmission line measurements</topic><topic>tunnel junctions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aghdam, Parisa Yadranjee</creatorcontrib><creatorcontrib>Rashid, Hawal</creatorcontrib><creatorcontrib>Pavolotsky, Alexey</creatorcontrib><creatorcontrib>Desmaris, Vincent</creatorcontrib><creatorcontrib>Meledin, Denis</creatorcontrib><creatorcontrib>Belitsky, Victor</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>SWEPUB Chalmers tekniska högskola full text</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Freely available online</collection><collection>SWEPUB Chalmers tekniska högskola</collection><collection>SwePub Articles full text</collection><jtitle>IEEE transactions on terahertz science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Aghdam, Parisa Yadranjee</au><au>Rashid, Hawal</au><au>Pavolotsky, Alexey</au><au>Desmaris, Vincent</au><au>Meledin, Denis</au><au>Belitsky, Victor</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct Measurement of Superconducting Tunnel Junction Capacitance</atitle><jtitle>IEEE transactions on terahertz science and technology</jtitle><stitle>TTHZ</stitle><date>2015-05-01</date><risdate>2015</risdate><volume>5</volume><issue>3</issue><spage>464</spage><epage>469</epage><pages>464-469</pages><issn>2156-342X</issn><issn>2156-3446</issn><eissn>2156-3446</eissn><coden>ITTSBX</coden><abstract>Superconductor-insulator-superconductor (SIS) junction is the key component for millimeter and submillimeter mixers for radio astronomy and environmental science. The capacitance of the SIS mixer determines both the RF and IF performance. Previously, measurements of this capacitance has had high uncertainty. Herein, we determine the SIS junction capacitance at cryogenic temperature ( ~ 4 K) by direct measurement of the SIS junction impedance at microwave frequencies. The proposed calibration method uses only one short-circuit reference. The SIS junction capacitance measurement is realized by biasing the junction at the different parts of its current-voltage characteristic, thus eliminating a separate measurement of short-circuit standard. In order to verify the measurement results, thin-film capacitors with known capacitance were also measured. The capacitance of four SIS junctions with various areas were measured. The absolute uncertainty of the proposed measurement method was found to vary from 5 to 6.8% amongst different junction areas.</abstract><pub>IEEE</pub><doi>10.1109/TTHZ.2015.2413214</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Calibration Capacitance Capacitance measurement Junctions Measurement uncertainty microwave measurement submillimeter-wave devices superconducting microwave devices Temperature measurement Transmission line measurements tunnel junctions |
| title | Direct Measurement of Superconducting Tunnel Junction Capacitance |
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