Environment-Dependent Bias Stress Stability of P-Type SnO Thin-Film Transistors

We investigate the effects of environmental water and oxygen on the electrical stability of p-type tin monoxide (SnO) thin-film transistors (TFTs). Under negative gate bias stresses, there was a larger threshold voltage shift (ΔV th ) in the devices that had been exposed to water than that for the d...

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Veröffentlicht in:	IEEE electron device letters 2015-05, Vol.36 (5), p.466-468
Hauptverfasser:	Han, Young-Joon, Choi, Yong-Jin, Jeong, Chan-Yong, Lee, Daeun, Song, Sang-Hun, Kwon, Hyuck-In
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance-voltage characteristics electrical stability environmental oxygen environmental water Frequency measurement Logic gates negative gate bias stresses P-type SnO TFTs positive gate bias stresses Semiconductor device measurement Stress Thermal stability Thin film transistors
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