Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs
In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output curr...
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| Veröffentlicht in: | IEEE transactions on electron devices 2015-04, Vol.62 (4), p.1150-1156 |
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| container_title | IEEE transactions on electron devices |
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| creator | Verona, Claudio Ciccognani, Walter Colangeli, Sergio Di Pietrantonio, Fabio Giovine, Ennio Limiti, Ernesto Marinelli, Marco Verona-Rinati, Gianluca |
| description | In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate-drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drain-source distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs. |
| doi_str_mv | 10.1109/TED.2015.2398891 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_ieee_primary_7042929</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7042929</ieee_id><sourcerecordid>10_1109_TED_2015_2398891</sourcerecordid><originalsourceid>FETCH-LOGICAL-c511t-54a7815d137bb5f79ee2ec47eb65cda512ce6b4526728f173010202cd85f80133</originalsourceid><addsrcrecordid>eNo9kD1PwzAQhi0EEqGwI7HkDzj4_BHbI2pDi1TE0DJHjnNGQU2C4jDw73HVqtPdvXreGx5CHoEVAMw-76tVwRmoggtrjIUrkoFSmtpSltckYwwMtcKIW3IX43c6Syl5RlZrNyPdjb-Tx3zVxdkNadl5d-iGr7wKAf0c827IN3SPU98NCW8T6PpxaPP3avda7eM9uQnuEPHhPBfkM8XLDd1-rN-WL1vqFcBMlXTagGpB6KZRQVtEjl5qbErlW6eAeywbqXipuQmgBQPGGfetUcEwEGJB2Omvn8YYJwz1z9T1bvqrgdVHC3WyUB8t1GcLqfJ0qnSIeME1k9xyK_4B5ntWnw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs</title><source>IEEE Electronic Library (IEL)</source><creator>Verona, Claudio ; Ciccognani, Walter ; Colangeli, Sergio ; Di Pietrantonio, Fabio ; Giovine, Ennio ; Limiti, Ernesto ; Marinelli, Marco ; Verona-Rinati, Gianluca</creator><creatorcontrib>Verona, Claudio ; Ciccognani, Walter ; Colangeli, Sergio ; Di Pietrantonio, Fabio ; Giovine, Ennio ; Limiti, Ernesto ; Marinelli, Marco ; Verona-Rinati, Gianluca</creatorcontrib><description>In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate-drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drain-source distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2015.2398891</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Current density ; Diamond ; Diamonds ; Geometry ; Logic gates ; MESFETs ; output current ; Performance evaluation ; semiconductor device manufacture ; transconductance</subject><ispartof>IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1150-1156</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c511t-54a7815d137bb5f79ee2ec47eb65cda512ce6b4526728f173010202cd85f80133</citedby><cites>FETCH-LOGICAL-c511t-54a7815d137bb5f79ee2ec47eb65cda512ce6b4526728f173010202cd85f80133</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7042929$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7042929$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Verona, Claudio</creatorcontrib><creatorcontrib>Ciccognani, Walter</creatorcontrib><creatorcontrib>Colangeli, Sergio</creatorcontrib><creatorcontrib>Di Pietrantonio, Fabio</creatorcontrib><creatorcontrib>Giovine, Ennio</creatorcontrib><creatorcontrib>Limiti, Ernesto</creatorcontrib><creatorcontrib>Marinelli, Marco</creatorcontrib><creatorcontrib>Verona-Rinati, Gianluca</creatorcontrib><title>Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate-drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drain-source distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs.</description><subject>Current density</subject><subject>Diamond</subject><subject>Diamonds</subject><subject>Geometry</subject><subject>Logic gates</subject><subject>MESFETs</subject><subject>output current</subject><subject>Performance evaluation</subject><subject>semiconductor device manufacture</subject><subject>transconductance</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kD1PwzAQhi0EEqGwI7HkDzj4_BHbI2pDi1TE0DJHjnNGQU2C4jDw73HVqtPdvXreGx5CHoEVAMw-76tVwRmoggtrjIUrkoFSmtpSltckYwwMtcKIW3IX43c6Syl5RlZrNyPdjb-Tx3zVxdkNadl5d-iGr7wKAf0c827IN3SPU98NCW8T6PpxaPP3avda7eM9uQnuEPHhPBfkM8XLDd1-rN-WL1vqFcBMlXTagGpB6KZRQVtEjl5qbErlW6eAeywbqXipuQmgBQPGGfetUcEwEGJB2Omvn8YYJwz1z9T1bvqrgdVHC3WyUB8t1GcLqfJ0qnSIeME1k9xyK_4B5ntWnw</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Verona, Claudio</creator><creator>Ciccognani, Walter</creator><creator>Colangeli, Sergio</creator><creator>Di Pietrantonio, Fabio</creator><creator>Giovine, Ennio</creator><creator>Limiti, Ernesto</creator><creator>Marinelli, Marco</creator><creator>Verona-Rinati, Gianluca</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150401</creationdate><title>Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs</title><author>Verona, Claudio ; Ciccognani, Walter ; Colangeli, Sergio ; Di Pietrantonio, Fabio ; Giovine, Ennio ; Limiti, Ernesto ; Marinelli, Marco ; Verona-Rinati, Gianluca</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c511t-54a7815d137bb5f79ee2ec47eb65cda512ce6b4526728f173010202cd85f80133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Current density</topic><topic>Diamond</topic><topic>Diamonds</topic><topic>Geometry</topic><topic>Logic gates</topic><topic>MESFETs</topic><topic>output current</topic><topic>Performance evaluation</topic><topic>semiconductor device manufacture</topic><topic>transconductance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Verona, Claudio</creatorcontrib><creatorcontrib>Ciccognani, Walter</creatorcontrib><creatorcontrib>Colangeli, Sergio</creatorcontrib><creatorcontrib>Di Pietrantonio, Fabio</creatorcontrib><creatorcontrib>Giovine, Ennio</creatorcontrib><creatorcontrib>Limiti, Ernesto</creatorcontrib><creatorcontrib>Marinelli, Marco</creatorcontrib><creatorcontrib>Verona-Rinati, Gianluca</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Verona, Claudio</au><au>Ciccognani, Walter</au><au>Colangeli, Sergio</au><au>Di Pietrantonio, Fabio</au><au>Giovine, Ennio</au><au>Limiti, Ernesto</au><au>Marinelli, Marco</au><au>Verona-Rinati, Gianluca</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2015-04-01</date><risdate>2015</risdate><volume>62</volume><issue>4</issue><spage>1150</spage><epage>1156</epage><pages>1150-1156</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate-drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drain-source distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs.</abstract><pub>IEEE</pub><doi>10.1109/TED.2015.2398891</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Current density Diamond Diamonds Geometry Logic gates MESFETs output current Performance evaluation semiconductor device manufacture transconductance |
| title | Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs |
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