Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Al 2 O 3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition deposited SiN x passivation. The difference i...

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Veröffentlicht in:	IEEE electron device letters 2015-03, Vol.36 (3), p.235-237
Hauptverfasser:	Malmros, Anna, Gamarra, Piero, Di Forte-Poisson, Marie-Antoinette, Hjelmgren, Hans, Lacam, Cedric, Thorsell, Mattias, Tordjman, Maurice, Aubry, Raphael, Rorsman, Niklas
Format:	Artikel
Sprache:	eng
Schlagworte:	Al2O3 ALD Aluminum oxide Gallium nitride GaN HEMT HEMTs InAlN Logic gates MODFETs Passivation Power generation
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