Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
Al 2 O 3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition deposited SiN x passivation. The difference i...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2015-03, Vol.36 (3), p.235-237 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 237 |
|---|---|
| container_issue | 3 |
| container_start_page | 235 |
| container_title | IEEE electron device letters |
| container_volume | 36 |
| creator | Malmros, Anna Gamarra, Piero Di Forte-Poisson, Marie-Antoinette Hjelmgren, Hans Lacam, Cedric Thorsell, Mattias Tordjman, Maurice Aubry, Raphael Rorsman, Niklas |
| description | Al 2 O 3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition deposited SiN x passivation. The difference in sheet charge density, threshold voltage, f T and f max was moderate for the three samples. The gate leakage current differed by several orders of magnitude, in favor of Al 2 O 3 passivation, regardless of the deposition method. Severe current slump was measured for the HEMT passivated by thermal ALD, whereas near-dispersion free operation was observed for the HEMT passivated by plasma-assisted ALD. This had a direct impact on the microwave output power. Large-signal measurements at 3 GHz revealed that HEMTs with Al 2 O 3 passivation exhibited 77% higher output power using plasma-assisted ALD compared with thermal ALD. |
| doi_str_mv | 10.1109/LED.2015.2394455 |
| format | Article |
| fullrecord | <record><control><sourceid>swepub_RIE</sourceid><recordid>TN_cdi_ieee_primary_7018036</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7018036</ieee_id><sourcerecordid>oai_research_chalmers_se_202c046c_2cc1_4392_ad18_21e75b6b9f92</sourcerecordid><originalsourceid>FETCH-LOGICAL-c405t-dea65425ba8fbc072361713155cbb068d90b4f44a245afe1193fbb0b55d1fd103</originalsourceid><addsrcrecordid>eNo9kFtLAzEQhYMoWC_vgi_5A1tnctnL46LVFqoVrL5JmGQTurJ1JWkV_71bWnwYBubMOcx8jF0hjBGhuplP7sYCUI-FrJTS-oiNUOsyA53LYzaCQmEmEfJTdpbSBwAqVagRe598U7elTdt_8j7w5crHNXX8zce0Tfy5o7SmrE6pTRvf8Hp-x-tOLCSnQaRh_L23hj7y2WfdPd3s6oGe-HTyuEwX7CRQl_zloZ-z1_vJ8naazRcPs9t6njkFepM1nnKthLZUBuugEDLHAuVwv7MW8rKpwKqgFAmlKXjESoZBsFo3GBoEec5e9rnpx39trfmK7Zrir-mpNdEnT9GtjFtRtx7-MskbAcKByp0RzqFRshKGGiyNQF9om9sqVGJIhX2qi31K0Yf_XASzg24G6GYH3RygD5brvaX13v-vF4AlyFz-AeiGe5Y</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs</title><source>IEEE Electronic Library (IEL)</source><creator>Malmros, Anna ; Gamarra, Piero ; Di Forte-Poisson, Marie-Antoinette ; Hjelmgren, Hans ; Lacam, Cedric ; Thorsell, Mattias ; Tordjman, Maurice ; Aubry, Raphael ; Rorsman, Niklas</creator><creatorcontrib>Malmros, Anna ; Gamarra, Piero ; Di Forte-Poisson, Marie-Antoinette ; Hjelmgren, Hans ; Lacam, Cedric ; Thorsell, Mattias ; Tordjman, Maurice ; Aubry, Raphael ; Rorsman, Niklas</creatorcontrib><description>Al 2 O 3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition deposited SiN x passivation. The difference in sheet charge density, threshold voltage, f T and f max was moderate for the three samples. The gate leakage current differed by several orders of magnitude, in favor of Al 2 O 3 passivation, regardless of the deposition method. Severe current slump was measured for the HEMT passivated by thermal ALD, whereas near-dispersion free operation was observed for the HEMT passivated by plasma-assisted ALD. This had a direct impact on the microwave output power. Large-signal measurements at 3 GHz revealed that HEMTs with Al 2 O 3 passivation exhibited 77% higher output power using plasma-assisted ALD compared with thermal ALD.</description><identifier>ISSN: 0741-3106</identifier><identifier>ISSN: 1558-0563</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2015.2394455</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Al2O3 ; ALD ; Aluminum oxide ; Gallium nitride ; GaN HEMT ; HEMTs ; InAlN ; Logic gates ; MODFETs ; Passivation ; Power generation</subject><ispartof>IEEE electron device letters, 2015-03, Vol.36 (3), p.235-237</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c405t-dea65425ba8fbc072361713155cbb068d90b4f44a245afe1193fbb0b55d1fd103</citedby><cites>FETCH-LOGICAL-c405t-dea65425ba8fbc072361713155cbb068d90b4f44a245afe1193fbb0b55d1fd103</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7018036$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,550,776,780,792,881,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7018036$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://research.chalmers.se/publication/215156$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Malmros, Anna</creatorcontrib><creatorcontrib>Gamarra, Piero</creatorcontrib><creatorcontrib>Di Forte-Poisson, Marie-Antoinette</creatorcontrib><creatorcontrib>Hjelmgren, Hans</creatorcontrib><creatorcontrib>Lacam, Cedric</creatorcontrib><creatorcontrib>Thorsell, Mattias</creatorcontrib><creatorcontrib>Tordjman, Maurice</creatorcontrib><creatorcontrib>Aubry, Raphael</creatorcontrib><creatorcontrib>Rorsman, Niklas</creatorcontrib><title>Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Al 2 O 3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition deposited SiN x passivation. The difference in sheet charge density, threshold voltage, f T and f max was moderate for the three samples. The gate leakage current differed by several orders of magnitude, in favor of Al 2 O 3 passivation, regardless of the deposition method. Severe current slump was measured for the HEMT passivated by thermal ALD, whereas near-dispersion free operation was observed for the HEMT passivated by plasma-assisted ALD. This had a direct impact on the microwave output power. Large-signal measurements at 3 GHz revealed that HEMTs with Al 2 O 3 passivation exhibited 77% higher output power using plasma-assisted ALD compared with thermal ALD.</description><subject>Al2O3</subject><subject>ALD</subject><subject>Aluminum oxide</subject><subject>Gallium nitride</subject><subject>GaN HEMT</subject><subject>HEMTs</subject><subject>InAlN</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>Passivation</subject><subject>Power generation</subject><issn>0741-3106</issn><issn>1558-0563</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>D8T</sourceid><recordid>eNo9kFtLAzEQhYMoWC_vgi_5A1tnctnL46LVFqoVrL5JmGQTurJ1JWkV_71bWnwYBubMOcx8jF0hjBGhuplP7sYCUI-FrJTS-oiNUOsyA53LYzaCQmEmEfJTdpbSBwAqVagRe598U7elTdt_8j7w5crHNXX8zce0Tfy5o7SmrE6pTRvf8Hp-x-tOLCSnQaRh_L23hj7y2WfdPd3s6oGe-HTyuEwX7CRQl_zloZ-z1_vJ8naazRcPs9t6njkFepM1nnKthLZUBuugEDLHAuVwv7MW8rKpwKqgFAmlKXjESoZBsFo3GBoEec5e9rnpx39trfmK7Zrir-mpNdEnT9GtjFtRtx7-MskbAcKByp0RzqFRshKGGiyNQF9om9sqVGJIhX2qi31K0Yf_XASzg24G6GYH3RygD5brvaX13v-vF4AlyFz-AeiGe5Y</recordid><startdate>20150301</startdate><enddate>20150301</enddate><creator>Malmros, Anna</creator><creator>Gamarra, Piero</creator><creator>Di Forte-Poisson, Marie-Antoinette</creator><creator>Hjelmgren, Hans</creator><creator>Lacam, Cedric</creator><creator>Thorsell, Mattias</creator><creator>Tordjman, Maurice</creator><creator>Aubry, Raphael</creator><creator>Rorsman, Niklas</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>ABBSD</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>D8T</scope><scope>F1S</scope><scope>ZZAVC</scope></search><sort><creationdate>20150301</creationdate><title>Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs</title><author>Malmros, Anna ; Gamarra, Piero ; Di Forte-Poisson, Marie-Antoinette ; Hjelmgren, Hans ; Lacam, Cedric ; Thorsell, Mattias ; Tordjman, Maurice ; Aubry, Raphael ; Rorsman, Niklas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c405t-dea65425ba8fbc072361713155cbb068d90b4f44a245afe1193fbb0b55d1fd103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Al2O3</topic><topic>ALD</topic><topic>Aluminum oxide</topic><topic>Gallium nitride</topic><topic>GaN HEMT</topic><topic>HEMTs</topic><topic>InAlN</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>Passivation</topic><topic>Power generation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Malmros, Anna</creatorcontrib><creatorcontrib>Gamarra, Piero</creatorcontrib><creatorcontrib>Di Forte-Poisson, Marie-Antoinette</creatorcontrib><creatorcontrib>Hjelmgren, Hans</creatorcontrib><creatorcontrib>Lacam, Cedric</creatorcontrib><creatorcontrib>Thorsell, Mattias</creatorcontrib><creatorcontrib>Tordjman, Maurice</creatorcontrib><creatorcontrib>Aubry, Raphael</creatorcontrib><creatorcontrib>Rorsman, Niklas</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>SWEPUB Chalmers tekniska högskola full text</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Freely available online</collection><collection>SWEPUB Chalmers tekniska högskola</collection><collection>SwePub Articles full text</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Malmros, Anna</au><au>Gamarra, Piero</au><au>Di Forte-Poisson, Marie-Antoinette</au><au>Hjelmgren, Hans</au><au>Lacam, Cedric</au><au>Thorsell, Mattias</au><au>Tordjman, Maurice</au><au>Aubry, Raphael</au><au>Rorsman, Niklas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2015-03-01</date><risdate>2015</risdate><volume>36</volume><issue>3</issue><spage>235</spage><epage>237</epage><pages>235-237</pages><issn>0741-3106</issn><issn>1558-0563</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Al 2 O 3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor deposition deposited SiN x passivation. The difference in sheet charge density, threshold voltage, f T and f max was moderate for the three samples. The gate leakage current differed by several orders of magnitude, in favor of Al 2 O 3 passivation, regardless of the deposition method. Severe current slump was measured for the HEMT passivated by thermal ALD, whereas near-dispersion free operation was observed for the HEMT passivated by plasma-assisted ALD. This had a direct impact on the microwave output power. Large-signal measurements at 3 GHz revealed that HEMTs with Al 2 O 3 passivation exhibited 77% higher output power using plasma-assisted ALD compared with thermal ALD.</abstract><pub>IEEE</pub><doi>10.1109/LED.2015.2394455</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2015-03, Vol.36 (3), p.235-237 |
| issn | 0741-3106 1558-0563 1558-0563 |
| language | eng |
| recordid | cdi_ieee_primary_7018036 |
| source | IEEE Electronic Library (IEL) |
| subjects | Al2O3 ALD Aluminum oxide Gallium nitride GaN HEMT HEMTs InAlN Logic gates MODFETs Passivation Power generation |
| title | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T03%3A38%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-swepub_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Evaluation%20of%20Thermal%20Versus%20Plasma-Assisted%20ALD%20Al2O3%20as%20Passivation%20for%20InAlN/AlN/GaN%20HEMTs&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Malmros,%20Anna&rft.date=2015-03-01&rft.volume=36&rft.issue=3&rft.spage=235&rft.epage=237&rft.pages=235-237&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2015.2394455&rft_dat=%3Cswepub_RIE%3Eoai_research_chalmers_se_202c046c_2cc1_4392_ad18_21e75b6b9f92%3C/swepub_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=7018036&rfr_iscdi=true |