Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices
We review and present additional results from our work on multilayer silicon nitride (SiN) on silicon-on-insulator (SOI) integrated photonic platforms over the telecommunication wavelength bands near 1550 and 1310 nm. SiN-on-SOI platforms open the possibility for passive optical functionalities impl...
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| Veröffentlicht in: | Journal of lightwave technology 2015-02, Vol.33 (4), p.901-910 |
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| container_title | Journal of lightwave technology |
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| creator | Sacher, Wesley D. Ying Huang Guo-Qiang Lo Poon, Joyce K. S. |
| description | We review and present additional results from our work on multilayer silicon nitride (SiN) on silicon-on-insulator (SOI) integrated photonic platforms over the telecommunication wavelength bands near 1550 and 1310 nm. SiN-on-SOI platforms open the possibility for passive optical functionalities implemented in the SiN layer to be combined with active functionalities in the SOI. SiN layers can be integrated onto SOI using a front-end or back-end of line integration process flow. These photonic platforms support low-loss SiN waveguides, low-loss and low-crosstalk waveguide crossings, and low-loss interlayer transitions using adiabatic tapers. Novel ultra-broadband and efficient grating couplers as well as polarization management devices are enabled by the close coupling between the silicon and SiN layers. |
| doi_str_mv | 10.1109/JLT.2015.2392784 |
| format | Article |
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S.</creator><creatorcontrib>Sacher, Wesley D. ; Ying Huang ; Guo-Qiang Lo ; Poon, Joyce K. S.</creatorcontrib><description>We review and present additional results from our work on multilayer silicon nitride (SiN) on silicon-on-insulator (SOI) integrated photonic platforms over the telecommunication wavelength bands near 1550 and 1310 nm. SiN-on-SOI platforms open the possibility for passive optical functionalities implemented in the SiN layer to be combined with active functionalities in the SOI. SiN layers can be integrated onto SOI using a front-end or back-end of line integration process flow. These photonic platforms support low-loss SiN waveguides, low-loss and low-crosstalk waveguide crossings, and low-loss interlayer transitions using adiabatic tapers. Novel ultra-broadband and efficient grating couplers as well as polarization management devices are enabled by the close coupling between the silicon and SiN layers.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2015.2392784</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bragg gratings ; integrated optics ; Loss measurement ; Optical device fabrication ; Optical losses ; Optical waveguides ; polarization ; Silicon ; Silicon compounds ; Silicon photonics ; Waveguide transitions ; waveguides</subject><ispartof>Journal of lightwave technology, 2015-02, Vol.33 (4), p.901-910</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-1e1e10a092a3fd03b7bdb26199ab980a0e7d4dd71fc287b19e708c3227cfa3f43</citedby><cites>FETCH-LOGICAL-c376t-1e1e10a092a3fd03b7bdb26199ab980a0e7d4dd71fc287b19e708c3227cfa3f43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7014292$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7014292$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sacher, Wesley D.</creatorcontrib><creatorcontrib>Ying Huang</creatorcontrib><creatorcontrib>Guo-Qiang Lo</creatorcontrib><creatorcontrib>Poon, Joyce K. S.</creatorcontrib><title>Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>We review and present additional results from our work on multilayer silicon nitride (SiN) on silicon-on-insulator (SOI) integrated photonic platforms over the telecommunication wavelength bands near 1550 and 1310 nm. SiN-on-SOI platforms open the possibility for passive optical functionalities implemented in the SiN layer to be combined with active functionalities in the SOI. SiN layers can be integrated onto SOI using a front-end or back-end of line integration process flow. These photonic platforms support low-loss SiN waveguides, low-loss and low-crosstalk waveguide crossings, and low-loss interlayer transitions using adiabatic tapers. Novel ultra-broadband and efficient grating couplers as well as polarization management devices are enabled by the close coupling between the silicon and SiN layers.</description><subject>Bragg gratings</subject><subject>integrated optics</subject><subject>Loss measurement</subject><subject>Optical device fabrication</subject><subject>Optical losses</subject><subject>Optical waveguides</subject><subject>polarization</subject><subject>Silicon</subject><subject>Silicon compounds</subject><subject>Silicon photonics</subject><subject>Waveguide transitions</subject><subject>waveguides</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMtOwzAQRS0EEqGwR2KTH3Cxx0ltL1F5FQVaibKOHHsCRmmCbIPUvydVC5rFlWbm3MUh5JKzKedMXz9V6ykwXk5BaJCqOCIZL0tFAbg4JhmTQlAloTglZzF-MsaLQsmMLJ-_u-Q7s8WQv_rO26HPX3wK3iEdevq3WvQJ34NJ6PLVx5CG3tt81ZnUDmETc9O7_BZ_vMV4Tk5a00W8OOSEvN3freePtFo-LOY3FbVCzhLlOA4zTIMRrWOikY1rYMa1No1W4wGlK5yTvLWgZMM1SqasAJC2HYlCTAjb99owxBiwrb-C35iwrTmrd0LqUUi9E1IfhIzI1R7xiPj_LkcToEH8AlBBXUs</recordid><startdate>20150215</startdate><enddate>20150215</enddate><creator>Sacher, Wesley D.</creator><creator>Ying Huang</creator><creator>Guo-Qiang Lo</creator><creator>Poon, Joyce K. 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S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-1e1e10a092a3fd03b7bdb26199ab980a0e7d4dd71fc287b19e708c3227cfa3f43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Bragg gratings</topic><topic>integrated optics</topic><topic>Loss measurement</topic><topic>Optical device fabrication</topic><topic>Optical losses</topic><topic>Optical waveguides</topic><topic>polarization</topic><topic>Silicon</topic><topic>Silicon compounds</topic><topic>Silicon photonics</topic><topic>Waveguide transitions</topic><topic>waveguides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sacher, Wesley D.</creatorcontrib><creatorcontrib>Ying Huang</creatorcontrib><creatorcontrib>Guo-Qiang Lo</creatorcontrib><creatorcontrib>Poon, Joyce K. S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sacher, Wesley D.</au><au>Ying Huang</au><au>Guo-Qiang Lo</au><au>Poon, Joyce K. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2015-02-15</date><risdate>2015</risdate><volume>33</volume><issue>4</issue><spage>901</spage><epage>910</epage><pages>901-910</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>We review and present additional results from our work on multilayer silicon nitride (SiN) on silicon-on-insulator (SOI) integrated photonic platforms over the telecommunication wavelength bands near 1550 and 1310 nm. SiN-on-SOI platforms open the possibility for passive optical functionalities implemented in the SiN layer to be combined with active functionalities in the SOI. SiN layers can be integrated onto SOI using a front-end or back-end of line integration process flow. These photonic platforms support low-loss SiN waveguides, low-loss and low-crosstalk waveguide crossings, and low-loss interlayer transitions using adiabatic tapers. Novel ultra-broadband and efficient grating couplers as well as polarization management devices are enabled by the close coupling between the silicon and SiN layers.</abstract><pub>IEEE</pub><doi>10.1109/JLT.2015.2392784</doi><tpages>10</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Bragg gratings integrated optics Loss measurement Optical device fabrication Optical losses Optical waveguides polarization Silicon Silicon compounds Silicon photonics Waveguide transitions waveguides |
| title | Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices |
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