Photoresponse nonlinearity of solid-state image sensors with antiblooming protection
The physical mechanism for photoresponse nonlinearity in solid-state image sensors with antiblooming protection is described and analyzed. This mechanism is the premature turn-on of the antiblooming structure, and can be characterized by its nonideality factor. It is shown that a lower nonideality f...
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| Veröffentlicht in: | IEEE transactions on electron devices 1991-02, Vol.38 (2), p.299-302 |
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| container_title | IEEE transactions on electron devices |
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| creator | Stevens, E.G. |
| description | The physical mechanism for photoresponse nonlinearity in solid-state image sensors with antiblooming protection is described and analyzed. This mechanism is the premature turn-on of the antiblooming structure, and can be characterized by its nonideality factor. It is shown that a lower nonideality factor results in a more linear response. Electrostatic modeling results and measurements show that devices with low-overflow drain (LOD) antiblooming structures can achieve nonideality factors very close to unity and, therefore, offer superior photoresponse linearity. This is especially true for devices with large pixels having low charge capacity, since the maximum voltage swing across the detector is small. Conversely, devices with vertical-overflow drain (VOD) structures are seen to have nonideality factors at best around two and in some other cases even higher, resulting in severe response nonlinearity.< > |
| doi_str_mv | 10.1109/16.69909 |
| format | Article |
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This mechanism is the premature turn-on of the antiblooming structure, and can be characterized by its nonideality factor. It is shown that a lower nonideality factor results in a more linear response. Electrostatic modeling results and measurements show that devices with low-overflow drain (LOD) antiblooming structures can achieve nonideality factors very close to unity and, therefore, offer superior photoresponse linearity. This is especially true for devices with large pixels having low charge capacity, since the maximum voltage swing across the detector is small. Conversely, devices with vertical-overflow drain (VOD) structures are seen to have nonideality factors at best around two and in some other cases even higher, resulting in severe response nonlinearity.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.69909</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors ; Capacitance ; Detectors ; Exact sciences and technology ; Helium ; Image analysis ; Image sensors ; Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Linearity ; Physics ; Protection ; Solid state circuits ; Temperature sensors ; Voltage</subject><ispartof>IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.299-302</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c335t-a9bce67b342b624ebfda96ae48963d8c108f72024dc01d3305a010e61baacc0c3</citedby><cites>FETCH-LOGICAL-c335t-a9bce67b342b624ebfda96ae48963d8c108f72024dc01d3305a010e61baacc0c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/69909$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/69909$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19631012$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Stevens, E.G.</creatorcontrib><title>Photoresponse nonlinearity of solid-state image sensors with antiblooming protection</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The physical mechanism for photoresponse nonlinearity in solid-state image sensors with antiblooming protection is described and analyzed. 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Conversely, devices with vertical-overflow drain (VOD) structures are seen to have nonideality factors at best around two and in some other cases even higher, resulting in severe response nonlinearity.< ></description><subject>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors</subject><subject>Capacitance</subject><subject>Detectors</subject><subject>Exact sciences and technology</subject><subject>Helium</subject><subject>Image analysis</subject><subject>Image sensors</subject><subject>Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Linearity</subject><subject>Physics</subject><subject>Protection</subject><subject>Solid state circuits</subject><subject>Temperature sensors</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKvg1VsuipetySabbo4ifkFBD_W8ZLOzbWSb1EyK9N8bbdGjp2GYh3d4XkLOOZtwzvQNVxOlNdMHZMSralpoJdUhGTHG60KLWhyTE8T3vCopyxGZvy5DChFwHTwC9cEPzoOJLm1p6CmGwXUFJpOAupVZAEXwGCLST5eW1Pjk2iGElfMLuo4hgU0u-FNy1JsB4Ww_x-Tt4X5-91TMXh6f725nhRWiSoXRrQU1bYUsW1VKaPvOaGVA1lqJrrac1f20ZKXsLOOdEKwyjDNQvDXGWmbFmFztcvPrjw1galYOLQyD8RA22JS11NlU_A9Woqp4rTN4vQNtDIgR-mYds3fcNpw13_02XDU__Wb0cp9p0Jqhj8Zbh398duCMl5m72HEOAH7Pu4wv6YSDrA</recordid><startdate>19910201</startdate><enddate>19910201</enddate><creator>Stevens, E.G.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19910201</creationdate><title>Photoresponse nonlinearity of solid-state image sensors with antiblooming protection</title><author>Stevens, E.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-a9bce67b342b624ebfda96ae48963d8c108f72024dc01d3305a010e61baacc0c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors</topic><topic>Capacitance</topic><topic>Detectors</topic><topic>Exact sciences and technology</topic><topic>Helium</topic><topic>Image analysis</topic><topic>Image sensors</topic><topic>Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Linearity</topic><topic>Physics</topic><topic>Protection</topic><topic>Solid state circuits</topic><topic>Temperature sensors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Stevens, E.G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Stevens, E.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoresponse nonlinearity of solid-state image sensors with antiblooming protection</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1991-02-01</date><risdate>1991</risdate><volume>38</volume><issue>2</issue><spage>299</spage><epage>302</epage><pages>299-302</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The physical mechanism for photoresponse nonlinearity in solid-state image sensors with antiblooming protection is described and analyzed. This mechanism is the premature turn-on of the antiblooming structure, and can be characterized by its nonideality factor. It is shown that a lower nonideality factor results in a more linear response. Electrostatic modeling results and measurements show that devices with low-overflow drain (LOD) antiblooming structures can achieve nonideality factors very close to unity and, therefore, offer superior photoresponse linearity. This is especially true for devices with large pixels having low charge capacity, since the maximum voltage swing across the detector is small. Conversely, devices with vertical-overflow drain (VOD) structures are seen to have nonideality factors at best around two and in some other cases even higher, resulting in severe response nonlinearity.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.69909</doi><tpages>4</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.299-302 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Bolometer infrared, submillimeter wave, microwave and radiowave receivers and detectors Capacitance Detectors Exact sciences and technology Helium Image analysis Image sensors Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Linearity Physics Protection Solid state circuits Temperature sensors Voltage |
| title | Photoresponse nonlinearity of solid-state image sensors with antiblooming protection |
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