Domain Wall Motion Device for Nonvolatile Memory and Logic - Size Dependence of Device Properties

Current-induced magnetic domain wall (DW)-motion device with a three- or four-terminal structure has considerable potential to trigger a profound transformation in memory and logic technologies. In this paper, we give an overview of DW-motion devices and describe their structure, operation method, a...

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Veröffentlicht in:	IEEE transactions on magnetics 2014-11, Vol.50 (11), p.1-6
Hauptverfasser:	Fukami, Shunsuke, Yamanouchi, Michihiko, Ikeda, Shoji, Ohno, Hideo
Format:	Artikel
Sprache:	eng
Schlagworte:	Integrated circuits Magnetic tunneling Magnetism Nickel Nonhomogeneous media Resistance Wires Writing
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