Modeling of Wide Bandgap Power Semiconductor Devices-Part I
Wide bandgap power devices have emerged as an often superior alternative power switch technology for many power electronic applications. These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared wit...
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| Veröffentlicht in: | IEEE transactions on electron devices 2015-02, Vol.62 (2), p.423-433 |
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| container_title | IEEE transactions on electron devices |
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| creator | Mantooth, Homer Alan Kang Peng Santi, Enrico Hudgins, Jerry L. |
| description | Wide bandgap power devices have emerged as an often superior alternative power switch technology for many power electronic applications. These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit-level simulators, are reviewed. In particular, this paper presents a review of compact models for silicon carbide power diodes and MOSFETs. |
| doi_str_mv | 10.1109/TED.2014.2368274 |
| format | Article |
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These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit-level simulators, are reviewed. 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These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit-level simulators, are reviewed. In particular, this paper presents a review of compact models for silicon carbide power diodes and MOSFETs.</abstract><pub>IEEE</pub><doi>10.1109/TED.2014.2368274</doi><tpages>11</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.423-433 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Computational modeling Gallium-nitride (GaN) Integrated circuit modeling Mathematical model modeling power device modeling power semiconductor devices Schottky diodes Semiconductor device modeling Silicon Silicon carbide silicon-carbide (SiC) wide bandgap |
| title | Modeling of Wide Bandgap Power Semiconductor Devices-Part I |
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