Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate

In this paper, a physical model of the slow-wave (SW) microstrip lines based on a metallic-nanowire-filled-membrane substrate is presented for the first time. The model properly predicts the behavior of the SW transmission lines as shown by the experimental results. Two sets of transmission lines di...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2014-12, Vol.62 (12), p.3249-3254
Hauptverfasser: Serrano, A. L. C., Franc, A.-L, Assis, D. P., Podevin, F., Rehder, G. P., Corrao, N., Ferrari, P.
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container_issue 12
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container_title IEEE transactions on microwave theory and techniques
container_volume 62
creator Serrano, A. L. C.
Franc, A.-L
Assis, D. P.
Podevin, F.
Rehder, G. P.
Corrao, N.
Ferrari, P.
description In this paper, a physical model of the slow-wave (SW) microstrip lines based on a metallic-nanowire-filled-membrane substrate is presented for the first time. The model properly predicts the behavior of the SW transmission lines as shown by the experimental results. Two sets of transmission lines differing in oxide thickness with various widths were fabricated and characterized up to 70 GHz. The electrical model is valid for both oxide thicknesses and microstrips width. High-quality factors are obtained, above 40 from 30 GHz up to 70 GHz, paving the way for further designs of passive circuits, like power dividers or hybrid couplers, with good performance.
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_6960106</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6960106</ieee_id><sourcerecordid>3516623021</sourcerecordid><originalsourceid>FETCH-LOGICAL-c360t-55fb215c32f233dcd22daced4c60d2efcbadf25f4992396b0a1de82d397edf803</originalsourceid><addsrcrecordid>eNo9kE1P3DAQhq0KpC4fP6DqxVJPPXgZ24kTH9GqC0gbOLCIo-XY42Ia4q2TBdFf30SLOI1m9LyvRg8h3zgsOQd9sW2226UAXiyFVIpD_YUseFlWTKsKjsgCgNdMFzV8JSfD8DytRQn1gvxpkscu9r-p7T1dPdls3Yg5_rNjTD1Ngd536Y092lekTXQ5DWOOO7qJPQ50AhocbddFx25tn95iRkbXsevQswZf2mx7pPf7dgrZEc_IcbDdgOcf85Q8rH9tV9dsc3d1s7rcMCcVjKwsQyt46aQIQkrvvBDeOvSFU-AFBtdaH0QZCq2F1KoFyz3WwktdoQ81yFPy89D7ZDuzy_HF5neTbDTXlxsz32ASJWQtXvnE_jiwu5z-7nEYzXPa5356z3AlgVeVLqqJ4gdqFjBkDJ-1HMzs38z-zezffPifMt8PmYiIn7zSCjgo-R_qvYII</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1630177947</pqid></control><display><type>article</type><title>Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate</title><source>IEEE Electronic Library Online</source><creator>Serrano, A. L. C. ; Franc, A.-L ; Assis, D. P. ; Podevin, F. ; Rehder, G. P. ; Corrao, N. ; Ferrari, P.</creator><creatorcontrib>Serrano, A. L. C. ; Franc, A.-L ; Assis, D. P. ; Podevin, F. ; Rehder, G. P. ; Corrao, N. ; Ferrari, P.</creatorcontrib><description>In this paper, a physical model of the slow-wave (SW) microstrip lines based on a metallic-nanowire-filled-membrane substrate is presented for the first time. The model properly predicts the behavior of the SW transmission lines as shown by the experimental results. Two sets of transmission lines differing in oxide thickness with various widths were fabricated and characterized up to 70 GHz. The electrical model is valid for both oxide thicknesses and microstrips width. High-quality factors are obtained, above 40 from 30 GHz up to 70 GHz, paving the way for further designs of passive circuits, like power dividers or hybrid couplers, with good performance.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2014.2366108</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Dielectric measurement ; Dielectrics ; Electromagnetism ; Electronics ; Engineering Sciences ; Low-cost substrate ; Micro and nanotechnologies ; Microelectronics ; Microstrip ; microstrip devices ; millimeter-wave (mmW) propagation ; Nanowires ; Power transmission lines ; slow-wave (SW) structures ; Substrates ; Transmission line measurements</subject><ispartof>IEEE transactions on microwave theory and techniques, 2014-12, Vol.62 (12), p.3249-3254</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2014</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-55fb215c32f233dcd22daced4c60d2efcbadf25f4992396b0a1de82d397edf803</citedby><cites>FETCH-LOGICAL-c360t-55fb215c32f233dcd22daced4c60d2efcbadf25f4992396b0a1de82d397edf803</cites><orcidid>0000-0002-7655-2958 ; 0000-0002-8477-5617</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6960106$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6960106$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://hal.science/hal-02012382$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Serrano, A. L. C.</creatorcontrib><creatorcontrib>Franc, A.-L</creatorcontrib><creatorcontrib>Assis, D. P.</creatorcontrib><creatorcontrib>Podevin, F.</creatorcontrib><creatorcontrib>Rehder, G. P.</creatorcontrib><creatorcontrib>Corrao, N.</creatorcontrib><creatorcontrib>Ferrari, P.</creatorcontrib><title>Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>In this paper, a physical model of the slow-wave (SW) microstrip lines based on a metallic-nanowire-filled-membrane substrate is presented for the first time. The model properly predicts the behavior of the SW transmission lines as shown by the experimental results. Two sets of transmission lines differing in oxide thickness with various widths were fabricated and characterized up to 70 GHz. The electrical model is valid for both oxide thicknesses and microstrips width. High-quality factors are obtained, above 40 from 30 GHz up to 70 GHz, paving the way for further designs of passive circuits, like power dividers or hybrid couplers, with good performance.</description><subject>Dielectric measurement</subject><subject>Dielectrics</subject><subject>Electromagnetism</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Low-cost substrate</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Microstrip</subject><subject>microstrip devices</subject><subject>millimeter-wave (mmW) propagation</subject><subject>Nanowires</subject><subject>Power transmission lines</subject><subject>slow-wave (SW) structures</subject><subject>Substrates</subject><subject>Transmission line measurements</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1P3DAQhq0KpC4fP6DqxVJPPXgZ24kTH9GqC0gbOLCIo-XY42Ia4q2TBdFf30SLOI1m9LyvRg8h3zgsOQd9sW2226UAXiyFVIpD_YUseFlWTKsKjsgCgNdMFzV8JSfD8DytRQn1gvxpkscu9r-p7T1dPdls3Yg5_rNjTD1Ngd536Y092lekTXQ5DWOOO7qJPQ50AhocbddFx25tn95iRkbXsevQswZf2mx7pPf7dgrZEc_IcbDdgOcf85Q8rH9tV9dsc3d1s7rcMCcVjKwsQyt46aQIQkrvvBDeOvSFU-AFBtdaH0QZCq2F1KoFyz3WwktdoQ81yFPy89D7ZDuzy_HF5neTbDTXlxsz32ASJWQtXvnE_jiwu5z-7nEYzXPa5356z3AlgVeVLqqJ4gdqFjBkDJ-1HMzs38z-zezffPifMt8PmYiIn7zSCjgo-R_qvYII</recordid><startdate>20141201</startdate><enddate>20141201</enddate><creator>Serrano, A. L. C.</creator><creator>Franc, A.-L</creator><creator>Assis, D. P.</creator><creator>Podevin, F.</creator><creator>Rehder, G. P.</creator><creator>Corrao, N.</creator><creator>Ferrari, P.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-7655-2958</orcidid><orcidid>https://orcid.org/0000-0002-8477-5617</orcidid></search><sort><creationdate>20141201</creationdate><title>Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate</title><author>Serrano, A. L. C. ; Franc, A.-L ; Assis, D. P. ; Podevin, F. ; Rehder, G. P. ; Corrao, N. ; Ferrari, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-55fb215c32f233dcd22daced4c60d2efcbadf25f4992396b0a1de82d397edf803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Dielectric measurement</topic><topic>Dielectrics</topic><topic>Electromagnetism</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Low-cost substrate</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Microstrip</topic><topic>microstrip devices</topic><topic>millimeter-wave (mmW) propagation</topic><topic>Nanowires</topic><topic>Power transmission lines</topic><topic>slow-wave (SW) structures</topic><topic>Substrates</topic><topic>Transmission line measurements</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Serrano, A. L. C.</creatorcontrib><creatorcontrib>Franc, A.-L</creatorcontrib><creatorcontrib>Assis, D. P.</creatorcontrib><creatorcontrib>Podevin, F.</creatorcontrib><creatorcontrib>Rehder, G. P.</creatorcontrib><creatorcontrib>Corrao, N.</creatorcontrib><creatorcontrib>Ferrari, P.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library Online</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Serrano, A. L. C.</au><au>Franc, A.-L</au><au>Assis, D. P.</au><au>Podevin, F.</au><au>Rehder, G. P.</au><au>Corrao, N.</au><au>Ferrari, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2014-12-01</date><risdate>2014</risdate><volume>62</volume><issue>12</issue><spage>3249</spage><epage>3254</epage><pages>3249-3254</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>In this paper, a physical model of the slow-wave (SW) microstrip lines based on a metallic-nanowire-filled-membrane substrate is presented for the first time. The model properly predicts the behavior of the SW transmission lines as shown by the experimental results. Two sets of transmission lines differing in oxide thickness with various widths were fabricated and characterized up to 70 GHz. The electrical model is valid for both oxide thicknesses and microstrips width. High-quality factors are obtained, above 40 from 30 GHz up to 70 GHz, paving the way for further designs of passive circuits, like power dividers or hybrid couplers, with good performance.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2014.2366108</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-7655-2958</orcidid><orcidid>https://orcid.org/0000-0002-8477-5617</orcidid></addata></record>
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subjects Dielectric measurement
Dielectrics
Electromagnetism
Electronics
Engineering Sciences
Low-cost substrate
Micro and nanotechnologies
Microelectronics
Microstrip
microstrip devices
millimeter-wave (mmW) propagation
Nanowires
Power transmission lines
slow-wave (SW) structures
Substrates
Transmission line measurements
title Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire- Filled-Membrane Substrate
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T09%3A44%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Modeling%20and%20Characterization%20of%20Slow-Wave%20Microstrip%20Lines%20on%20Metallic-Nanowire-%20Filled-Membrane%20Substrate&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Serrano,%20A.%20L.%20C.&rft.date=2014-12-01&rft.volume=62&rft.issue=12&rft.spage=3249&rft.epage=3254&rft.pages=3249-3254&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2014.2366108&rft_dat=%3Cproquest_RIE%3E3516623021%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1630177947&rft_id=info:pmid/&rft_ieee_id=6960106&rfr_iscdi=true