Physics-Based Compact Modeling of Successive Breakdown in Ultrathin Oxides

In this letter, we present a physics-based compact SPICE model to predict statistical time-dependent dielectric breakdown (TDDB) in nanoscale circuits. In our model, an increase in the gate leakage current (I G_B D ) induced by TDDB is estimated using a quantum point contact (QPC) model depending on...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2015-01, Vol.14 (1), p.7-9
Hauptverfasser:	Panagopoulos, Georgios, Chih-Hsiang Ho, Soo Youn Kim, Roy, Kaushik
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Channels Circuits Delays Electric breakdown Gate leakage current Integrated circuit modeling Leakage current Logic gates Mathematical models Oxides Percolation quantum point contact (QPC) model soft breakdown (SBD) SPICE Statistics Stress successive breakdown timedependent dielectric breakdown (TDDB) Transistors Volt-ampere characteristics
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