The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances
We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n + -IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal- semiconductor...
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| Veröffentlicht in: | IEEE electron device letters 2014-12, Vol.35 (12), p.1185-1187 |
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| container_title | IEEE electron device letters |
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| creator | Jeong-Kyu Kim Gwang-Sik Kim Hyohyun Nam Changhwan Shin Jin-Hong Park Jong-Kook Kim Byung Jin Cho Saraswat, Krishna C. Hyun-Yong Yu |
| description | We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n + -IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal- semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n + -IL provides much lower contact resistivity, resulting in ~5× lower contact resistivity than 1×10 -8 Ω-cm 2 , specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n + -IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration. |
| doi_str_mv | 10.1109/LED.2014.2364574 |
| format | Article |
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Compared to the metal- semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n + -IL provides much lower contact resistivity, resulting in ~5× lower contact resistivity than 1×10 -8 Ω-cm 2 , specified in International Technology Roadmap for Semiconductors. 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Compared to the metal- semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n + -IL provides much lower contact resistivity, resulting in ~5× lower contact resistivity than 1×10 -8 Ω-cm 2 , specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n + -IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.</description><subject>CMOS</subject><subject>CMOS technology</subject><subject>Conductivity</subject><subject>Contact resistance</subject><subject>Doping</subject><subject>FinFET</subject><subject>FinFETs</subject><subject>Germanium</subject><subject>interfacial layer</subject><subject>MOSFET</subject><subject>Performance evaluation</subject><subject>source/drain</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF1LwzAUhoMoOKf3gjf5A9mSJk2TS9mXg4pC53VJ0xOMrO1IW6T_3owNz83hHJ73vXgQemZ0wRjVy3yzXiSUiUXCpUgzcYNmLE0Voankt2hGM8EIZ1Teo4e-_6GRFJmYod_DN-CNc94aO-HO4XcYzJHs2wGCM9abI87NBIEU0HjbtfVohy7gohuDheU6GN_iYgjxOwbAXTzGijBK2ga35DCdAO8Ab3273RzwZ6zsQmNaC_0junPm2MPTdc_RV0RWbyT_2O1XrzmxPNEDqVIjLatYHClAGSsUY6nSwvHa1UlGTZZVwiZKAdWq5roSWjmp6kRQ5ozmc0QvvTZ0fR_AlafgGxOmktHyLK6M4sqzuPIqLkZeLhEPAP-41FyqTPE_W7lpMQ</recordid><startdate>201412</startdate><enddate>201412</enddate><creator>Jeong-Kyu Kim</creator><creator>Gwang-Sik Kim</creator><creator>Hyohyun Nam</creator><creator>Changhwan Shin</creator><creator>Jin-Hong Park</creator><creator>Jong-Kook Kim</creator><creator>Byung Jin Cho</creator><creator>Saraswat, Krishna C.</creator><creator>Hyun-Yong Yu</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201412</creationdate><title>The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances</title><author>Jeong-Kyu Kim ; Gwang-Sik Kim ; Hyohyun Nam ; Changhwan Shin ; Jin-Hong Park ; Jong-Kook Kim ; Byung Jin Cho ; Saraswat, Krishna C. ; Hyun-Yong Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-b5a6c1b111164e8ac48115894f3dfd270a77b4c288e098d39b498f68d2401fa93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>CMOS</topic><topic>CMOS technology</topic><topic>Conductivity</topic><topic>Contact resistance</topic><topic>Doping</topic><topic>FinFET</topic><topic>FinFETs</topic><topic>Germanium</topic><topic>interfacial layer</topic><topic>MOSFET</topic><topic>Performance evaluation</topic><topic>source/drain</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jeong-Kyu Kim</creatorcontrib><creatorcontrib>Gwang-Sik Kim</creatorcontrib><creatorcontrib>Hyohyun Nam</creatorcontrib><creatorcontrib>Changhwan Shin</creatorcontrib><creatorcontrib>Jin-Hong Park</creatorcontrib><creatorcontrib>Jong-Kook Kim</creatorcontrib><creatorcontrib>Byung Jin Cho</creatorcontrib><creatorcontrib>Saraswat, Krishna C.</creatorcontrib><creatorcontrib>Hyun-Yong Yu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jeong-Kyu Kim</au><au>Gwang-Sik Kim</au><au>Hyohyun Nam</au><au>Changhwan Shin</au><au>Jin-Hong Park</au><au>Jong-Kook Kim</au><au>Byung Jin Cho</au><au>Saraswat, Krishna C.</au><au>Hyun-Yong Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2014-12</date><risdate>2014</risdate><volume>35</volume><issue>12</issue><spage>1185</spage><epage>1187</epage><pages>1185-1187</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n + -IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal- semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n + -IL provides much lower contact resistivity, resulting in ~5× lower contact resistivity than 1×10 -8 Ω-cm 2 , specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n + -IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.</abstract><pub>IEEE</pub><doi>10.1109/LED.2014.2364574</doi><tpages>3</tpages></addata></record> |
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| subjects | CMOS CMOS technology Conductivity Contact resistance Doping FinFET FinFETs Germanium interfacial layer MOSFET Performance evaluation source/drain |
| title | The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances |
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